MBE and MOVPE growths of InP-based extended wavelength and GaSb-based IR emitter and detector structures have progressed to production mode. These photonics device structures are typically grown using large format, multi wafer MBE and MOCVD tools and on large diameter substrates (100 to 150 mm). In this work, material characterization data of advanced InP- and GaSb based epitaxial structures will be shown. Multi point measurements showing cross-wafer and cross-platen uniformity will also be shared. Finally, detailed analysis of run-to-run epiwafer data will be presented to demonstrate the manufacturability of our production epitaxial process for these advanced photonics device structures.
We demonstrate an AlInP detector grown on lattice-matched GaAs substrate for underwater communication applications.
This detector has a narrow inherent spectral response of 22 nm with central wavelength at ~ 480 nm and is capable of
having avalanche gain of ~ 20 which gives peak responsivity of ~ 2 A/W. A much higher multiplication of ~167 was
shown in the previous work. The full-width-half-maximum (FWHM) and responsivity of this detector is fairly
insensitive to the angle of the incident light. These properties enable it to detect an optical signal at 480 nm even in the
presence of high background illumination.
Al0.52In0.48P is the largest bandgap material in III-V non-nitride semiconductors that is lattice matched to a readily available substrate (GaAs). Having a bandgap narrower than that of GaN enables it to detect wavelengths around 480 nm. Such wavelengths have the best transmittance underwater and may be used as a carrier in underwater communication systems. We present an Al0.52In0.48P homo-junction Separate-Absorption-Multiplication-Avalanche-Photodiode (SAMAPD) as a high sensitivity detector for such an application. By increasing the neutral and space-charge region thicknesses, the peak response wavelength can be tuned to longer wavelengths with a narrower full-width-half-maximum (FWHM). The quantum efficiency of the detector reduces with FWHM and this is compensated by having an avalanche gain. At room temperature, the SAM-APD has a dark current of <20 pA for a 210 μm radius device up to 99.9% of breakdown voltage. The structure gives a narrow spectral FWHM of 22 nm with centre wavelength of 482 nm. An external quantum efficiency of 33% and 6410% at 482 nm is obtained at bias voltage of -19 V and -92.6 V respectively.
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