Mr. Jeroen H. Lammers Profile

Jeroen H. Lammers

at Philips Research Nederland BV

SPIE Involvement:

Author

Publications (8)

SPIE Journal Paper | 1 April 2008

Novel method for characterizing resist performance

David Van Steenwinckel, Roel Gronheid, Jeroen Lammers, Frieda Van Roey, Patrick Willems

JM3, Vol. 7, Issue 02, 023002, (April 2008) https://doi.org/10.1117/12.10.1117/1.2909204

KEYWORDS: Line width roughness, Nanoimprint lithography, Electroluminescence, Diffusion, Photoresist materials, Absorbance, Extreme ultraviolet, Lithography, Photoresist processing, Extreme ultraviolet lithography

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Proceedings Article | 21 March 2007 Paper

A novel method for characterizing resist performance

D. Van Steenwinckel, R. Gronheid, J. Lammers, A. Meyers, F. Van Roey, P. Willems

Proceedings Volume 6519, 65190V (2007) https://doi.org/10.1117/12.712861

KEYWORDS: Line width roughness, Nanoimprint lithography, Diffusion, Electroluminescence, Photoresist materials, Extreme ultraviolet lithography, Extreme ultraviolet, Modulation transfer functions, Lithography, Photoresist processing

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Proceedings Article | 4 May 2005 Paper

Performance of EUV photoresists on the ALS micro exposure tool

Thomas Koehler, Robert Brainard, Patrick Naulleau, David Van Steenwinckel, Jeroen Lammers, Kenneth Goldberg, Joseph Mackevich, Peter Trefonas

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600511

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist materials, Chemically amplified resists, Lithography, Semiconducting wafers, Image resolution, Scanning electron microscopy, Diffractive optical elements

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Proceedings Article | 4 May 2005 Paper

Lithographic importance of acid diffusion in chemically amplified resists

David Van Steenwinckel, Jeroen Lammers, L. H. A. Leunissen, J. A. J. M. Kwinten

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598677

KEYWORDS: Diffusion, Line edge roughness, Electroluminescence, Lithography, Modulation transfer functions, Photoresist processing, Photoresist materials, Chemically amplified resists, Point spread functions, Convolution

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SPIE Journal Paper | 1 January 2005

Overbake and resist formulation: improved depth of focus and small line printing

David Van Steenwinckel, Makoto Shimizu, Jeroen Lammers

JM3, Vol. 4, Issue 01, 013005, (January 2005) https://doi.org/10.1117/12.10.1117/1.1858491

KEYWORDS: Diffusion, Printing, Photoresist processing, Photoresist materials, Line edge roughness, Lithography, Critical dimension metrology, Cadmium sulfide, Binary data, Photomasks

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Proceedings Article | 20 May 2004 Paper

Shot noise, LER, and quantum efficiency of EUV photoresists

Robert Brainard, Peter Trefonas, Jeroen Lammers, Charlotte Cutler, Joseph Mackevich, Alexander Trefonas, Stewart Robertson

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536411

KEYWORDS: Line edge roughness, Extreme ultraviolet, Molecules, Photons, Deep ultraviolet, Diffusion, Quantum efficiency, Extreme ultraviolet lithography, Optical spheres, Photoresist materials

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The shot noise, line edge roughness (LER) and quantum efficiency of EUV interaction with seven resists related to EUV-2D (SP98248B) are studied. These resists were identical to EUV-2D except were prepared with seven levels of added base while keeping all other resist variables constant. These seven resists were patterned with EUV lithography, and LER was measured on 100-200 nm dense lines. Similarly, the resists were also imaged using DUV lithography and LER was determined for 300-500 nm dense lines. LER results for both wavelengths were plotted against E_size. Both curves show very similar LER behavior-the resists requiring low doses have poor LER, whereas the resists requiring high doses have good LER. One possible explanation for the observed LER response is that the added base improves LER by reacting with the photogenerated acid to control the lateral spread of acid, leading to better chemical contrast at the line edge. An alternative explanation to the observed relationship between LER and E_size is that shot-noise generated LER decreases as the number of photons absorbed at the line edge increases. We present an analytical model for the influence of shot noise based on Poisson statistics that preidicts that the LER is proportional to (E_size)^-1/2. Indeed, both sets of data give straight lines when plotted this way (DUV r² = 0.94; EUV r² = 0.97). We decided to further evaluate this interpretation by constructing a simulation model for shot noise resulting from exposure and acid diffusion at the mask edge. In order to acquire the data for this model, we used the base titration method developed by Szmanda et al. to determine C-parameters and hence the quantum efficiency for producing photogenerated acid. This information, together with film absorptivity, allows the calculation of number and location of acid molecules generated at the mask edgte by assuming a stochastic distribution of individual photons corresponding to the aerial image function. The edge "roughness" of the acid molecule distribution in the film at the mask edge is then simulated as a function of acid diffusion length and compared to the experimental data. In addition, comparisoins between of the number of acid molecules generated and photons consumed leads to values of quantum efficiencies for these EUV resists.

Proceedings Article | 14 May 2004 Paper

Do we need complex resist models for predictive simulation of lithographic process performance?

Bernd Tollkuhn, Andreas Erdmann, Jeroen Lammers, Christoph Nolscher, Armin Semmler

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534045

KEYWORDS: Finite element methods, Calibration, Data modeling, Photomasks, Diffusion, Optical proximity correction, Semiconducting wafers, Critical dimension metrology, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 12 June 2003 Paper

Enhanced processing: sub-50-nm features with 0.8-micron DOF using a binary reticle

David Van Steenwinckel, Jeroen Lammers

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485202

KEYWORDS: Printing, Diffusion, Photoresist materials, Binary data, Photomasks, Polymers, Critical dimension metrology, Photoresist processing, 193nm lithography, Lithography

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Showing 5 of 8 publications

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