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Here, a layered metal dichalcogenide semiconductor tin disulfide (SnS2), characterized with high intrinsic electron mobility and strong absorption in the visible light regime [3], is chosen to be coated onto MKR. The all-optical control of light functionality is demonstrated in MKR with SnS2 structure where the signal light power is controlled by the external violet pump power via the absorption property of SnS2. The device fabrication, characterization and obtained experimental results will be presented in the talk.
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