Sensing in the critical 1100-1400nm spectral region is well served by VCSELs and photodetector utilizing dilute nitride (DN) materials grown on GaAs substrates. For CMOS compatibility the growth of DN materials on 200mm Ge wafers has also been demonstrated. The DN VCSEL structure can also be grown using MOCVD for the DBR which gives the ideal mix of performance and high-volume throughput. The successful growth of equivalent performance DN materials by MOCVD has been achieved for photodetector, work on VCSEL is ongoing.
Long Wavelength VCSELs and edge emitters have been grown by Molecular Beam Epitaxy (MBE) on GaAs substrates for applications in 3D sensing and LIDAR. Adding small amounts of nitrogen to the InGaAs QW material allows longer emission wavelengths to be achieved, but these alloys are notoriously difficult to achieve good optical material quality. Careful control of the layer structure and growth conditions of the dilute nitride active region has resulted in state of the art device characteristics at these wavelengths, which will be presented. Further optimization has been carried out to demonstrate appropriate device reliability under standard test conditions.
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