ZnO epitaxial layers were plasma etched using BCl3/SF6 gas mixtures in an Oxford Instruments System 100 ICP 180. Etch rates were studied as a function of gas composition, pressure, ICP coil power and RF power. The ZnO etch rate in pure BCl3 at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was ~1175 Å/min (-1000V bias). The etch rate increased with increasing SF6 percentage in the flow, and for the same conditions in pure SF6 the etch rate was ~1350 Å/min (-820V bias).
The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are
investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface
profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights
from other recently published results are also discussed.
A review of the current literature on plasma etching of ZnO is presented. The etch rates as a function of etch conditions in Cl2-based BCl3-based and CH4-based and related chemistries are reviewed. Resultant surface morphology, anisotropy, surface stoichiometry and band edge photoluminescence results are also discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.