Mr. Katsumi Ohmori Profile

Katsumi Ohmori

General Manager at Tokyo Ohka Kogyo Co Ltd

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Author

Publications (23)

Proceedings Article | 13 March 2018 Paper

Desirable material selection on self-aligned multi-patterning

Kyohei Koike, Kazuki Yamada, Masatoshi Yamato, Hidetami Yaegashi, Takehiro Seshimo, Takahiro Dazai, Katsumi Ohmori

Proceedings Volume 10586, 105861F (2018) https://doi.org/10.1117/12.2297297

KEYWORDS: Carbon, Silicon, Etching, Polymers, System on a chip, Scanning electron microscopy, Silicon carbide, Oxides, Reactive ion etching, Optical lithography

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Proceedings Article | 1 April 2016 Paper

Directed self-assembly of Si-containing and topcoat free block copolymer

Tasuku Matsumiya, Takehiro Seshimo, Tsuyoshi Kurosawa, Hitoshi Yamano, Ken Miyagi, Tomotaka Yamada, Katsumi Ohmori

Proceedings Volume 9777, 97771P (2016) https://doi.org/10.1117/12.2218243

KEYWORDS: Directed self assembly, Annealing, Thin films, Etching, Lithography, Optical lithography, Manufacturing, Semiconductors, Polymers, Control systems, Silicon, Dry etching, Nitrogen, Scanning electron microscopy

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Proceedings Article | 18 March 2016 Paper

Patterning performance of chemically amplified resist in EUV lithography

Tatsuya Fujii, Shogo Matsumaru, Tomotaka Yamada, Yoshitaka Komuro, Daisuke Kawana, Katsumi Ohmori

Proceedings Volume 9776, 97760Y (2016) https://doi.org/10.1117/12.2218417

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Lithography, Diffusion, Extreme ultraviolet, Polymers, Chemically amplified resists, High volume manufacturing, Semiconductor manufacturing, Semiconductors, Quantum efficiency, Electrons, Semiconducting wafers

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Proceedings Article | 20 March 2015 Paper

Development of EUV chemically amplified resist which has novel protecting group

Shogo Matsumaru, Tatsuya Fujii, Takashi Kamizono, Kenta Suzuki, Hiroto Yamazaki, Masatoshi Arai, Yoshitaka Komuro, Akiya Kawaue, Daisuke Kawana, Taku Hirayama, Katsumi Ohmori

Proceedings Volume 9425, 94250U (2015) https://doi.org/10.1117/12.2087197

KEYWORDS: Polymers, Extreme ultraviolet, Quantum efficiency, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Chemically amplified resists, High volume manufacturing, Polymer thin films, Diffusion

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Proceedings Article | 20 March 2015 Paper

Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process

Tasuku Matsumiya, Tsuyoshi Kurosawa, Masahito Yahagi, Hitoshi Yamano, Ken Miyagi, Takaya Maehashi, Issei Suzuki, Akiya Kawaue, Yoshitaka Komuro, Taku Hirayama, Katsumi Ohmori

Proceedings Volume 9425, 942517 (2015) https://doi.org/10.1117/12.2087009

KEYWORDS: Materials processing, Coating, Annealing, Error analysis, Critical dimension metrology, Optical lithography, Polymers, Image processing, Manufacturing, Directed self assembly

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Proceedings Article | 13 March 2015 Paper

Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography

Yoshitaka Komuro, Hiroki Yamamoto, Kazuo Kobayashi, Katsumi Ohomori, Takahiro Kozawa

Proceedings Volume 9422, 94220O (2015) https://doi.org/10.1117/12.2085749

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Polymers, Double positive medium, Chemically amplified resists, Quantum efficiency, Lithography, Diffusion, Line width roughness, Ionization

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Proceedings Article | 17 April 2014 Paper

Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography

Yoshitaka Komuro, Hiroki Yamamoto, Yoshiyuki Utsumi, Katsumi Ohmori, Takahiro Kozawa

Proceedings Volume 9048, 90481F (2014) https://doi.org/10.1117/12.2046627

KEYWORDS: Polymers, Chemically amplified resists, Extreme ultraviolet lithography, Absorption, Diffusion, Extreme ultraviolet, Ionization, Line edge roughness, Electron beams, Matrices

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Proceedings Article | 28 March 2014 Paper

Guided self-assembly of Si-containing block copolymer with a topcoat surface treatment

Takehiro Seshimo, Yoshiyuki Utsumi, Takahiro Dazai, Takaya Maehashi, Katsumi Ohmori

Proceedings Volume 9049, 90490X (2014) https://doi.org/10.1117/12.2046270

KEYWORDS: Silicon, Etching, Optical lithography, Annealing, Polymers, Coating, Lithography, Resistance, Polymerization, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Perpendicular orientation of block-co-polymer on controlled neutralization layer

Daiju Shiono, Tsuyoshi Kurosawa, Kenichiro Miyashita, Tasuku Matsumiya, Ken Miyagi, Katsumi Ohmori

Proceedings Volume 8680, 86801Q (2013) https://doi.org/10.1117/12.2011638

KEYWORDS: Surface roughness, Polymers, Coating, Atomic force microscopy, Scanning electron microscopy, Surface properties, Chemical analysis, Thin film coatings, Phase measurement, Directed self assembly

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Proceedings Article | 23 March 2012 Paper

Out-of-band insensitive polymer-bound PAG for EUV resist

Jun Iwashita, Taku Hirayama, Kensuke Matsuzawa, Yoshiyuki Utsumi, Katsumi Ohmori

Proceedings Volume 8322, 83220Y (2012) https://doi.org/10.1117/12.916355

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Absorption, Polymers, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Line width roughness, Diffusion, Lithographic illumination

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Proceedings Article | 20 March 2012 Paper

CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification

Katsumi Ohmori, Naoto Motoike, Hidetami Yaegashi, Kenichi Oyama

Proceedings Volume 8325, 83250C (2012) https://doi.org/10.1117/12.916321

KEYWORDS: Photoresist processing, Line width roughness, Double patterning technology, Silica, Optical lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Polymers

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Proceedings Article | 31 March 2010 Paper

Process performance of novel resist material and novel coater/developer system for cross-line contact hole process

Tsuyoshi Nakamura, Jiro Yokoya, Katsumi Ohmori, Hiroshi Nakamura, Takafumi Niwa, Hideharu Kyouda, Junichi Kitano

Proceedings Volume 7639, 76391W (2010) https://doi.org/10.1117/12.846342

KEYWORDS: Lithography, Photoresist processing, Image processing, Double patterning technology, Semiconducting wafers, Critical dimension metrology, Defect detection, Image resolution, Photomasks, Optical lithography

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Proceedings Article | 30 March 2010 Paper

Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Tomoyuki Ando, Katsumi Ohmori, Mitsuru Sato, Junichi Onodera

Proceedings Volume 7639, 76390U (2010) https://doi.org/10.1117/12.846391

KEYWORDS: Fullerenes, Etching, Nanolithography, Electron beams, Lithography, Polymers, Reactive ion etching, Ultraviolet radiation, Line edge roughness, Silicon

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Proceedings Article | 26 March 2010 Paper

Process feasibility investigation of freezing free litho-litho-etch process for below 32nm hp

Tsuyoshi Nakamura, Masaru Takeshita, Jiro Yokoya, Yasuhiro Yoshii, Hirokuni Saito, Ryoichi Takasu, Katsumi Ohmori

Proceedings Volume 7639, 76392V (2010) https://doi.org/10.1117/12.846335

KEYWORDS: Lithography, Double patterning technology, Etching, Optical lithography, Photoresist processing, Immersion lithography, Image processing, Photoresist materials, Polymers, Photomasks

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Proceedings Article | 1 April 2009 Paper

Newly developed positive tone resists for Posi/Posi double patterning process

Tsuyoshi Nakamura, Masaru Takeshita, Satoshi Maemori, Ryusuke Uchida, Ryoichi Takasu, Katsumi Ohmori

Proceedings Volume 7273, 727304 (2009) https://doi.org/10.1117/12.814028

KEYWORDS: Image processing, Double patterning technology, Etching, Photoresist processing, Coating, Lithography, Immersion lithography, Image resolution, Optical lithography, 193nm lithography

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Proceedings Article | 26 March 2008 Paper

Chemically amplified molecular resist based on fullerene derivative for nanolithography

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Tomoyuki Ando, Katsumi Ohmori, Mitsuru Sato, Junichi Onodera

Proceedings Volume 6923, 69230N (2008) https://doi.org/10.1117/12.771835

KEYWORDS: Fullerenes, Etching, Electron beams, Silicon, Nanolithography, Ultraviolet radiation, Photoresist processing, Line edge roughness, Polymers, Scanning electron microscopy

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Proceedings Article | 11 April 2007 Paper

Progress of hard mask material for multi-layer stack application

Hisanobu Harada, Koji Yonemura, Takeshi Tanaka, Daisuke Kawana, Naoki Yamashita, Katsumi Ohmori

Proceedings Volume 6519, 65190N (2007) https://doi.org/10.1117/12.711941

KEYWORDS: Etching, Polymers, Photomasks, Line width roughness, Reflectivity, Silicon, Carbon, Resistance, Dry etching, Reflection

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Proceedings Article | 23 March 2007 Paper

Single component chemically-amplified resist based on dehalogenation of polymer

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Katsumi Ohmori, Mitsuru Sato, Hiroji Komano

Proceedings Volume 6519, 65192G (2007) https://doi.org/10.1117/12.711656

KEYWORDS: Polymers, Chemically amplified resists, Photoresist materials, Ionizing radiation, Silicon, Electron beams, Semiconducting wafers, Scanning electron microscopy, Photomicroscopy, Halogens

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Proceedings Article | 11 April 2006 Paper

Defect studies of resist process for 193nm immersion lithography

Tomoyuki Ando, Katsumi Ohmori, Satoshi Maemori, Toshikazu Takayama, Keita Ishizuka, Masaaki Yoshida, Tomoyuki Hirano, Jiro Yokoya, Katsushi Nakano, Tomoharu Fujiwara, Soichi Owa

Proceedings Volume 6153, 615309 (2006) https://doi.org/10.1117/12.656164

KEYWORDS: Semiconducting wafers, Photoresist processing, Immersion lithography, Resonance energy transfer, Lithography, Materials processing, Bridges, 193nm lithography, Molecular bridges, Lens design

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Proceedings Article | 11 April 2006 Paper

Progress of topcoat and resist development for 193nm immersion lithography

Katsumi Ohmori, Tomoyuki Ando, Toshikazu Takayama, Keita Ishizuka, Masaki Yoshida, Yoshiyuki Utsumi, Kotaro Endo, Takeshi Iwai

Proceedings Volume 6153, 61531X (2006) https://doi.org/10.1117/12.656360

KEYWORDS: Polymers, Immersion lithography, Semiconducting wafers, Photoresist processing, Lithography, Silicon, Scanners, Coating, Manufacturing, 193nm lithography

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Proceedings Article | 24 March 2006 Paper

Tri-layer resists process for fabricating 45-nm L&S patterns by EPL

Fumihiro Koba, Kazuyuki Matsumaro, Eiichi Soda, Tadayoshi Watanabe, Yoshihisa Matsubara, Hiroshi Arimoto, Tasuku Matsumiya, Daisuke Kawana, Naoki Yamashita, Yasushi Fujii, Katsumi Ohmori, Mitsuru Sato, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6151, 615127 (2006) https://doi.org/10.1117/12.655976

KEYWORDS: Photoresist processing, Failure analysis, Etching, Back end of line, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Photomasks

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In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we tried to fabricate sub 45-nm L&S (1:1) patterns using a conventional EPL single-layer resist process. There, the resolution of the EPL resist patterns turned out to be limited to 70 nm L&S (1:1) with aspect ratio (AR) of 3.3 which was caused by pattern collapse during the drying step in resist develop process. It has been common knowledge that pattern collapse of this type could be prevented by reducing the surface tension of the rinse-liquid and by decreasing the AR of the resist patterns. Therefore, we first applied a surfactant rinse to a single-layer resist process that could control the pattern collapse by its reduced surface tension. In this experiment, we used the ArF resist instead of the EPL resist because the surfactant that we were able to obtain was the one optimized to the ArF resist materials. From the results of ArF resist experiments, it was guessed that it was difficult for the EPL resist to obtain the L&S patterns with AR of 3.5 or more even if we used the surfactant optimized to the EPL resist. And we found that it was considerably difficult to form 45-nm L&S patterns with AR of 5.1 that was our target. Next, we evaluated a EPL tri-layer resist process to prevent pattern collapse by decreasing the AR of the resist patterns. Because in a tri-layer resist process the purpose of the top-layer resist is to transfer pattern to the middle-layer, a thinner top-layer resist was selected. By using the tri-layer resist process we were able to control the resist pattern collapse and thus were successful in achieving 40-nm L/S (1:1) top-layer resist patterns with AR of 2.3. The process also gave us 40-nm L&S (1:1) patterns after low-k film etching. And moreover, using our tri-layer resist process we were able to fabricate a wiring device with Cu/low-k. Although it was our first attempt, the process resulted in a high yield of 70 % for a 60-nm (1:1) wiring device. As a part of our study we conducted failure analysis of the results of our experiment. We found that the failures were located at the edge of the wafer and might originate in the bottom-layer pattern collapse. We thought that the wiring yield could be increased by control the bottom-layer pattern collapse. These findings indicated that our tri-layer resist process had a high applicability for device fabrication in BEOL.

Proceedings Article | 21 March 2006 Paper

Verification of optical proximity effect in immersion lithography

Toshifumi Suganaga, Shinroku Maejima, Tetsuro Hanawa, Takeo Ishibashi, Shuji Nakao, Seiichiro Shirai, Koichiro Narimatsu, Kazuyuki Suko, Kenichi Shiraishi, Yuki Ishii, Tomoyuki Ando, Katsumi Ohmori

Proceedings Volume 6154, 61544K (2006) https://doi.org/10.1117/12.655526

KEYWORDS: Immersion lithography, Technetium, Lithography, Resonance energy transfer, Polymers, Manufacturing, Scanners, Scanning electron microscopy, Optics manufacturing, Optical coatings

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Proceedings Article | 21 July 2000 Paper

Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography

Takeo Watanabe, Hiroo Kinoshita, Atsushi Miyafuji, Shigeo Irie, Shigeru Shirayone, Shigeyasu Mori, Ei Yano, Hideo Hada, Katsumi Ohmori, Hiroshi Komano

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390100

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Chemically amplified resists, Lithography, Image resolution, Wafer-level optics, Mirrors, Photomasks, Scanning electron microscopy, Ultraviolet radiation

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Showing 5 of 23 publications

Conference Committee Involvement (2)

Advances in Patterning Materials and Processes XXXIII

29 February 2016 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXII

24 February 2015 | San Jose, California, United States

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