We fabricated metalenses with a field-of-view of 170 deg and succeeded in taking outdoor images. We also report the ghost noise and demonstrate that it can be suppressed by using a multilayer filter.
Without moving parts, the snapshot imaging polarimeter utilizing Savart plates is capable of stable and fast measurements of spatiallly distributed Stokes parameters. To increase feasibility of the optical design, we propose modi cations that enable a wider eld-of view. By changing the Savar plates' con guration and improving the calibration procedure, the unwanted effects associated with the increase in the eld of view can be reduced. We carried out the veri cation experiments of the wide eld of view snapshot imaging polarimeter.
The wavefront measurements have been performed with the EUV Wavefront Metrology System (EWMS) for the first
time using a prototype projection optic as a test optic. The wavefronts of the test optic was measured at the five positions
in the exposure field with the Digital Talbot Interferometer (DTI). The RMS magnitude of the wavefront errors ranged
from 0.71 λ (9.58 nm) to 1.67 λ (22.75 nm). The results obtained with the DTI were compared to those with the Cross
Grating Lateral Shearing Interferometer (CGLSI). As a result of a repeatability assessment, it was found that the EWMS
can stably measure the wavefronts of the test optic. Additionally, unwrapping of the phase map was found to be related
to the precision of the measurement.
Comparisons between several at-wavelength metrological methods are reported. The comparisons are performed by measuring one test optic with several kinds of measurement methods from the viewpoints of accuracy, precision and practicality. According to our investigation, we found that the PDI, the LDI, and the CGLSI are the most suitable methods for evaluating optics for EUV lithography.
A Calibration technology for double-grating lateral shearing interferometer1 (DLSI) and lateral shearing interferometer (LSI) is proposed in this paper. In this method, two measurements are used for calibration. One is the measurement by using the first- and zero-order diffraction beams of grating in the interferometer; the other one is the measurement by using the minus-first-order and zero-order diffraction beams. The phase distributions were calculated out from the two measurements. After shifted one phase distribution to superpose the other one, in the sum of the two phase distributions, the test wavefront is canceled. The system error caused by the grating diffraction and grating tilt can be calculated out from the sum of the superposed phase distributions. For calculating out the system errors, the sum of the two phase distributions is fitted to Zernike-Polynomials. From the coefficients of the Zernike-polynomials, the system error is calculated. This method is carried out to calibrate the system error of DLSI. We performed an experiment to verify the available of our calibration method.
We present the experimental results of EUVA Absolute Point Diffraction Interferometer (ABSPDI) and Lateral Shearing Interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). The attained repeatability of either type of the interferometers is within 0.04nmRMS. The experimental results have shown good consistency between the LSI and ABSPDI. The reasons for the residual differences have been analyzed and we believed it is mainly due to the CCD tilt effect in the experimental system. After the CCD tilt effect was removed, a better consistency below 0.33nm RMS has been achieved.
The recent experimental results of EUV wavefront metrology in EUVA are reported. EUV Experimental Interferometer (EEI) was built at the NewSUBARU synchrotron facility of University of Hyogo to develop the most suitable wavefront measuring method for EUV projection optics. The result is to be reflected on EWMS (EUV Wavefront Metrology System) that measures wavefront aberrations of a six-aspherical mirror projection optics of NA0.25, of a mass-production EUV lithography tool. The experimental results of Point Diffraction Interferometer (PDI) and Lateral Shearing Interferometer (LSI) are shown and the error factors and the sensitivity of astigmatism measurements of these methods are discussed. Furthermore, for reducing these kinds of errors, another type of shearing interferometer called DTI (Digital Talbot interferometer) is newly introduced.
In visible-light point diffraction interferometer (PDI), in order to achieve measurement error <0.1 - 0.2 nm rms, wavefront irregularity from the pinhole must be supressed as 0.05 - 0.1 nm rms in designing. It is so difficult to execute such high accurate (10-4λ) simulation because the numerical electromagnetic simulation shows slow convergence in the visible-region. We discussed this problem by using 2D-model and found simulation conditions to obtain significant results. By using the simulator, several kind of systematic erros have been analyzed and optimized.
An point diffraction interferometry (PDI) system is used for measurement of EUV aspherical mirrors, because diffracted light by a small aperture has a nearly ideal spherical wavefront and EUV projection systems is designed with mild aspheres so that the mirrors can be tested at the center curvature without null optics. An advanced point diffraction interferometer has been developed and its precision and accuracy performance tested with a spherical mirror have been reported in last year1. After that, the diameter of the pinhole employed in the PDI system is switched from 1.0mm to 0.5mm in anticipation of measurement accuracy improvement. An aspherical mirror is measured, and the system error is estimated from the aspherical measurement data. In this system error estimation, an aspherical mirror designed for a four-mirrors EUV projection optics is used.
EUV masks generally mandate rigorous scattering models as the thickness to wavelength ratio is typically on the order of 30:1. In addition, boundary conditions at the absorber/air interface lead to non-zero electric fields even in the absorber region while the phase itself generally experiences a complex cross mask behavior that is pattern type as well as size dependent. Using two different types of rigorous simulators that are based on the differential method (LithoLand) and the time-domain finite-element method (EMFLEX) we explore and quantify the subtleties associated with the EUV mask when compared to a thin mask obeying the Kirchoff approximation. Both rigorous simulators predict that 30 nm isolated pattern, especially for NA >0.20 experience a focus shift of about 50 nm relative to best focus for the thin mask case. This effect occurs even when the illumination is normally incident to the mask. Furthermore, the Bossung curve for isolated patterns show an asymmetry through focus that is absent for the thin mask case and is sensitive to the partial coherence condition of the illuminator. Nested features seem to be far more immune to this unexpected anomaly. The origin of the predicated focus shift and asymmetry is explained through the complex phase behavior for the EUV mask which is fundamentally different from the thin mask case.
An advanced point diffraction interferometer for measuring EUV aspherical mirrors with high accuracy has been developed. It is designed for measuring various EUV mirrors with high accuracy and high precision. It can measure the surface figure of all mirrors that will be used in high numerical aperture systems. Using this interferometer, 0.1nm rms precision and 0.2nm rms accuracy are expected.
In high NA imaging systems such as Solid Immersion Lens ,incident angle is so large, and the polarization of incident beam is disturbed by passing through the SIL surface and by diffraction from the recording medium. Previously (ISOM'98) we reported the influence of polarization disturbance to the readout signals in phase change medium^. Here the same problem on the embossed mark is studied.
ntroduction Super-resolution is the eternal dream of the researchers in the field of optics. It is almost surprising that many new techniques for super-resolution have come in the field of optical storage recently. In the case of optical disc systems, one can modify the recorded mark on the disc so as to give the optimum result to the detected signal. This feature of optical systems makes it relatively easier to come up with a new super-resolution technique in comparison with microscopy where the image must be similar to the object. In addition, it is a great advantage to use scanning optical systems for read-out because finite time is necessary to form a scanned image, which allows us to make ’trick of time’. Therefore, it is relatively easier to figure out a new super-resolution technique in the field of optical storage compared with that of optical lithography where scanning optical systems have not been applied. However, it is well worth trying to introduce good concepts for super-resolution from historical work of microscopy. Sometimes a gem is hidden among them.
Absolute measurement of spherical surface by use of point diffraction interferometer (PDI) has been studied both theoretically and experimentally. By the estimation of optical error, 10-3 (lambda) rms can be expected as absolute accuracy. Experimental results with high accuracy have been obtained.
We investigate the readout signal with near field SIL by using vector diffraction theory. Readout signal from phase-change medium and optical ROM is analyzed. Air gap dependence and polarization dependence is discussed.
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