Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are used to spectrally resolve the carrier dynamics, revealing transfer between quantum dots and a homogeneous linewidth of 12 nm at room temperature. The time constant for carrier escape is shown to increase from 35 ps at room temperature to 130 ps at 230 K. We then employ a rate equation model to simulate the performance of a semiconductor optical amplifier with QDs as the active region.
We demonstrate InGaAs/GaAs quantum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate equation simulations indicate that this multimode behavior can be explained by a homogeneous broadening that is on the order of the mode spacing.
Conference Committee Involvement (5)
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII
25 January 2011 | San Francisco, California, United States
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
24 January 2010 | San Francisco, California, United States
Quantum Dots, Particles, and Nanoclusters VI
25 January 2009 | San Jose, California, United States
Quantum Dots, Particles, and Nanoclusters V
21 January 2008 | San Jose, California, United States
Quantum Dots, Particles, and Nanoclusters IV
22 January 2007 | San Jose, California, United States
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