This paper presents our latest experimental results of welding and cutting of steel and aluminum using a High Power, High Brightness Direct Diode Laser (DDL) upgraded with a Laser-Integrated Dynamic Beam Shaper (DBS). TeraDiode’s DDLDBS laser system transforms the beam distribution from Gaussian-like to Doughnut shape, and a beam parameter product from 4 to 25mm·mrad and doing so in a continuous, real-time manner with very low latency below 10ms. These capabilities unlock a wide range of processing parameters and an overall improved quality for metal cutting and welding while using simplified processing heads. This capability can be applied to DDL from 500W to 8000W power range.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 17) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation16). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 201621). Recently we have demonstrated, EUV power recorded at113W in burst stabilized (85W in average, 75% duty), with 5% conversion efficiency during 143hours operation. Also the Pilot#1 system recorded 64% availability and idle time was 25%. Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= -0.5%/Gp) above 100W level operation with dummy mirror test22) . Very low degradation (= - 0.4%/Gp) of actual collector mirror reflectance has been demonstrated above 100W level operation (in burst) with magnetic mitigation EUV source.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 17) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 2016). Recently we have demonstrated, EUV power recorded at113W in burst stabilized (85W in average, 75% duty), with 5% conversion efficiency during 143hours operation. Also the Pilot#1 system recorded 64% availability and idle time was 25%. Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= -0.5%/Gp) above 100W level operation with dummy mirror test) . Very low degradation (= - 0.4%/Gp) of actual collector mirror reflectance has been demonstrated above 100W level operation (in burst) with magnetic mitigation EUV source.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL since 2003. Unique original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulse shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. We demonstrated 117W EUV power (I/F clean in burst), 50 kHz, 22 hours stable operation at Pilot #1 device. Target of this device is 250 W EUV power by 27 kW pulsed CO2 driver laser system.
13.5nm wavelength, CO2-Sn-LPP EUV light source which is the most promising solution for the source capable of enabling high-volume-manufacturing of semiconductor devices with critical layers patterned with sub-10nm resolution. Our source incorporates unique and original technologies such as; high power short pulse CO2 laser, short wavelength solid-state pre-pulse laser, highly stabilized droplet generator, a laser-droplet shooting control system and debris mitigation technology utilizing a strong magnetic field. In this paper we present a technology update on the key components of our 250W CO2-Sn-LPP EUV light source.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL since 2003. Unique original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulse shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. We demonstrated 117W EUV power (I/F clean in burst), 50 kHz, 22 hours stable operation at Pilot #1 device. Target of this device is 250 W EUV power by 27 kW pulsed CO2 driver laser system.
Successful merger of state-of-the-art, semiconductor quantum-cascade lasers (QCL), with the mature CO2 laser technology, resulted in a delivery of highly-desired qualities of CO2 laser output that were not available previously without much effort. These qualities, such as multi-line operation, excellent spectro-temporal stability and pulse waveform control, became available from a single device of moderate complexity. This paper describes the operation principle and the unique properties of the solid{state seeded CO2 laser, invented for an application in laser-produced-plasma (LPP), extreme-UV (EUV) light source.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL since 2003. Unique original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulse shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. We demonstrated 108W EUV power (I/F clean in burst), 80 kHz, 24 hours stable operation at Proto#2 device. Based on these experimental data we are now constructing first practical source for HVM; “GL200E-Pilot#1”. Target of this device is 250 W EUV power by 27 kW pulsed CO2 driver laser system.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as: combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting, and mitigation with magnetic field, have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. Based on these data we are developing first practical source for HVM - “GL200E”. This data means 250W EUV power will be able to realize around 20kW level pulsed CO2 laser. We have reported engineering data from our recent test such around 43W average clean power, CE=2.0%, with 100kHz operation and other data 19). We have already finished preparation of higher average power CO2 laser more than 20kW at output power cooperate with Mitsubishi Electric Corporation 14). Recently we achieved 92W with 50kHz, 50% duty cycle operation 20). We have reported component technology progress of EUV light source system.
We report promising experimental data and result of simulation of magnetic mitigation system in Proto #1 system. We demonstrated several data with Proto #2 system: (1) emission data of 140W in burst under 70kHz 50% duty cycle during 10 minutes. (2) emission data of 118W in burst under 60kHz 70% duty cycle during 10 minutes. (3) emission data of 42W in burst under 20kHz 50% duty cycle (10000pls/0.5ms OFF) during 3 hours (110Mpls). Also we report construction of Pilot #1 system. Final target is week level operation with 250W EUV power with CE=4%, more than 27kW CO2 laser power by the end of Q2 of 2015.
Since 2002, we have been developing a CO2-Sn-LPP EUV light source, the most promising solution as the 13.5 nm
high power (>200 W) light source for HVM EUV lithography. Because of its high efficiency, power scalability and
spatial freedom around plasma. Our group has proposed several unique original technologies; 1) CO2 laser driven Sn
plasma generation, 2) Double laser pulse shooting for higher Sn ionization rate and higher CE. 3) Sn debris mitigation
with a magnetic field, 4) Hybrid CO2 laser system that is scalable with a combination of a short pulse oscillator and
commercial cw-CO2 amplifiers. 5) High efficient out of band light reduction with grating structured C1 mirror. In past
paper we demonstrated in small size (2Hz) experimental device, this experiment shoed the advantage of combining a
laser beam at a wavelength of the CO2 laser system with Sn plasma to achieve high CE>4.7% (in maximum) from driver laser pulse energy to EUV in-band energy 1). In this paper we report the further updated results from last paper. (1) 20um droplets at 100kHz operation was successfully ejected by downsized nozzle and demonstrated dramatical improvement of debris on the collector mirror. We have been developing extension of high CE operation condition at 20kHz range, We have reported component technology progress of EUV light source system. (2)New generation collector mirror with IR reduction technology is equipped in mirror maker. (3)20kW CO2 laser amplifier system is demonstrated cooperate with Mitsubishi electric. (4) We develop new Proto #2 EUV LPP source system and demonstrated 200W EUV plasma power (43W EUV clean power at I/F ) at 100kHz operation was confirmed. (5) High conversion efficiency (CE) of 3.9% at 20kHz operation was confirmed in using pico-second pre-pulse laser. (6)Improvement of CO2 laser power from 8kW to 12kW is now on going by installation of new pre-amplifier. (7)Power-up scenario of HVM source is reported, target shipment of first customer beta LPP light source unit is 2015.
Since 2002, we have been developing a CO2-Sn-LPP EUV light source, the most promising solution as the 13.5 nm high power (>200 W) light source for HVM EUV lithography. Because of its high efficiency, power scalability and spatial freedom around plasma, we believe that the CO2-Sn-LPP scheme is the most feasible candidate as the light source for EUVL. By now, our group has proposed several unique original technologies such as CO2 laser driven Sn plasma generation, double laser pulse shooting for higher Sn ionization rate and higher CE, Sn debris mitigation with a magnetic field, and a hybrid CO2 laser system that is a combination of a short pulse oscillator and commercial cw-CO2 amplifiers. The theoretical and experimental data have clearly demonstrated the advantage of combining a laser beam at a wavelength of the CO2 laser system with Sn plasma to achieve high CE from driver laser pulse energy to EUV in-band energy. Combination of CO2 laser power and droplet generator improvements on new EUV chamber (Proto-2) enables stable EUV emission. EUV burst operation data shows stable average 10.2W(clean power @ I/F) EUV emission and maximum 20.3W(clean power @ I/F) was demonstrated. For future HVM the maximum of 4.7% CE with a 20 μm droplet are demonstrated by ps pre-pulse LPP. Also reported 40kW CO2 laser development project cooperate with Mitsubishi electric.
Laser Produced Plasma (LPP) Extreme Ultra Violet (EUV) light source is expected to be used for next generation
lithography. To realize such performance for industrial use, the main driver laser is one of the key components. Our
source uses a high power pulsed carbon dioxide (CO2) laser as a plasma driver. A master oscillator and a power amplifier
(MOPA) system based on a new configuration of an RF-excited CO2 laser is the key to high efficiency. And multiline
amplification of CO2 laser is efficient to increase the extraction efficiency in the case of short pulse amplification like
this amplification. Numerical result shows the amplification enhancement as 1.3 times higher than the single line
amplification. This report shows its initial performance. Multiline configuration is applied to the master oscillator and the
efficiency of multiline amplification is verified in our experimental amplifier system. We have achieved 10% energy
extraction improvement using 2 lines (P20+P22) as compared to single line (P20).
Laser Produced Plasma (LPP) Extreme Ultra Violet (EUV) light source is expected to be used for next generation
lithography. To realize such performance for industrial use, the main driver laser is one of the key components. Our
source uses a high power pulsed carbon dioxide (CO2) laser as a plasma driver. A master oscillator and a power amplifier
(MOPA) system based on a new configuration of an RF-excited CO2 laser is the key to high efficiency. This pulsed CO2 laser system has started to operate. This report shows its initial performance. Also for a reliable industrial system, the
optical instability caused by vibration and thermal distortion of optics should be suppressed at 20 kW output level. The
primary design of key modules, such as mirrors, for the CO2 laser, and dynamic design concepts are shown in this report.
We have achieved 7.6 kW, 14 nsec, 100 kHz pulsed output in this configuration.
We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year
ago1). In this paper we update performance status of the 1st generation system. We have improved the system
further, maximum burst power is 104W (100kHz, 1 mJ EUV power @ intermediate focus), laser-EUV conversion
efficiency is 2.5%. Also continuous operation time is so far up to 8 hours with 5% duty cycle is achieved. We have
investigated EUV plasma creation scheme by small experimental device which is facilitated 10Hz operation
(maximum). We have proposed double pulse method to create LPP plasma efficiently. This moment we found out
3.3% conversion efficiency operation condition.
Based on the engineering data of ETS and small experimental device, now we are developing 2nd generation
HVM source; GL200E. The device consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid
CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3)
Magnetic mitigation, and (4) Double pulse EUV plasma creation. The preliminary data are introduced in this paper.
We are developing a CO2 laser driven Tin plasma EUV source for HVM EUVL. This approach enables cost-effective EUV power scaling by high-conversion efficiency and full recovery of Tin fuel. The RF-excited, multi 10 kW average power pulsed CO2 laser system is a MOPA (master oscillator power amplifier) configuration and operates at 100 kHz with 20 ns pulse width. The EUV light source is scalable to in-band 200 W IF power with a single 20-kW CO2 laser beam. EUV chamber is kept uncontaminated by using a small size droplet target and effective Tin exhaust by magnetic plasma guiding. Characterization of the plasma flow in uniform magnetic field was studied by monitoring the motion of Tin plasma stream in a large vacuum chamber, depending on the magnetic flux up to 2 T. Topics relevant for HVM source is reported on continuous operation and Tin vapor evacuation.
Krzysztof Nowak, Takashi Suganuma, Akira Endo, Akira Sumitani, Dmitri Goryachkin, Nikolay Romanov, Vladimir Sherstobitov, Lev Kovalchuk, Andrey Yu. Rodionov
Recent studies of fundamental issues of target material format and laser radiation parameters have revealed the
attractiveness of LPP EUV source technology based on Sn target and multi-kW CO2 laser driver. In recent work we
have reported 8kW of average power at 100kHz repetition frequency and 20ns pulse duration produced by our MOPA
CO2 laser driver built on a chain of Fast Axial Flow (FAF) amplifiers. However, the oscillator power is insufficient to
saturate the input stages and significant amount of available laser energy (>80%) is untapped. In this paper we report a
step towards an improvement of laser driver power and efficiency. For the first time, to our knowledge, the performance
of a novel multi-pass pre-amplifier based on RF-excited slab waveguide CO2 laser technology has been numerically
modeled. The calculations show the feasibility of this approach. We carried out amplification experiments to validate the
numerical model. In our experiments we have obtained power gain of 10 at 13-pass configuration from a slab of
60x600mm2 geometry at 20ns pulse length and 100kHz repetition frequency at diffraction-limited output and no self-oscillation.
The experiment has validated the numerical model, which will be used at this stage to design and optimize a pre-amplifier for our current FAF amplifier chain. Furthermore, these results enable us to design and optimize next generation of LPP laser driver based entirely on compact slab-waveguide amplifiers.
We are developing a high power CO2 laser system for a LPP EUV light source. Recent theoretical and experimental data
demonstrate the advantages of the combination of a CO2 laser with a Sn target including the generation of a high CE and
low debris plasma with low energy ions and low out-of-band radiation. Our laser system is a short pulse CO2 MOPA
(Master Oscillator Power Amplifier) system with 22 ns pulse width and multi kW average power at 100 kHz repetition
rate. We achieved an average laser power of 8 kW with a single laser beam having very good beam quality. A EUV in-band
power of 60 W at the intermediate focus was generated irradiating a rotating tin plate with 6 kW laser power.
We are developing a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The
light source is based on a high power, high repetition rate CO2 laser system, a tin target and a magnetic ion guiding for
tin treatment. The laser system is a master oscillator power amplifier (MOPA) configuration. We have achieved an
average laser output power of 10 kW at 100 kHz by a single laser beam with good beam quality. EUV in-band power
equivalent to 60 W at intermediate focus was produced by irradiating a tin rotating plate with 6 kW laser power. This
light source is scalable to more than 200 W EUV in-band power based on a 20-kW CO2 laser. Collector mirror life can
be extended by using droplet target and magnetic ion guiding. Effectiveness of the magnetic ion guiding is examined by
monitoring the motion of fast Sn ion in a large vacuum chamber with a maximum magnetic flux density of 2 T.
A technique for localised damage repair of fused silica optical surfaces has been investigated. The study reports the use of a CO2 laser system at 10.6μm wavelength with 50&mum spot diameter (measured at 1/e2) and pulse duration ranging from 50μs to 200ms. Data of the threshold axial irradiance for the onset of measurable mass loss were produced and compared with heat flow calculations based in "hot" properties of silica, showing a changeover from predominantly 1-d cooling below 300µs to quasi-steady-state 2-d cooling beyond 1ms. Typically, irradiances of about 90% of the threshold for mass loss are then used. Surface melt spots generated with a single laser pulse are found to produce measurable cleaning of the initial polishing swirls and light scratches (~tens of nm deep) at all pulse lengths investigated. A reproducible reference scratch of 1.5μm width and 100-200nm depth made by diamond scribing has been used to simulate smoothing or closing of crack-like features. To fully remove the test scratch requires multiple applications of long pulses. Finally, smoothing of the groups of micron-size surface pits caused by optical damage has been obtained, removing significantly the relative amplitude at high frequencies of the fast Fourier transform with a lower limit of 200 cycles/mm for the 50μm spotsize.
Laser ablation and laser smoothing of silica is investigated as a method of manufacturing custom micro-optics for use with high-power, diode laser arrays. A highly flexible machining regime has been identified that uses 30 to 60 microseconds square pulses, generated from a stabilized CO2 laser by an acousto-optical modulator (AOM). Refractive optical surfaces with apertures of 1 mm x 1 mm have been generated by the multi-pulse, raster scanning method with cut depths in the range of 10 to 30 μm controlled to an accuracy of better than 150 nm. A subsequent laser "fire polishing" step to smooth out the surface, using the same laser system as for machining, but in a long pulse mode at an energy fluence that just avoids further ablation of the surface. The objective of the research is to produce rapid prototyping of arrays of refractive elements, to avoid the tooling or mask-writing steps of alternative methods. A particular interest is in the generation of corrective optical elements to improve the beam quality of arrays of diode laser bars.
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