In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
The integration on silicon of light sources emitting in the 2-5 µm wavelength range for sensing applications is currently under the focus of attention.
In this work we have studied the influence of the quantum well number (from 1 to 4 QWs) on the performances of GaSb-based laser diodes grown on silicon and emitting at 2.3 µm. We have observed that – somewhat counterintuitively – the best performances in terms of threshold current and internal losses are achieved with 1 QW. The results will be discussed in comparison with similar laser diodes grown on native GaSb substrates.
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on GaSb-based laser diodes (LDs) and InAs/AlSb quantum-cascade lasers (QCLs), grown on on-axis (001) Si substrates by molecular-beam epitaxy, and covering emission wavelengths from 2 to 10 µm. Threshold current densities well below 1 kA.cm-2 are achieved in both cases. Ridge LDs operate cw up to 80 °C and emit around 10 mW at room temperature whereas QCLs exhibit performances comparable to their counterpart grown on native InAs substrates. In addition, we will demonstrate that etching facets is a viable route toward cavity definition.
The monolithic integration of III-V semiconductors on on-axis silicon is currently under active consideration. In this work we propose a novel epitaxial procedure to grow high quality, anti-phase boundary free GaSb layers on on-axis Si. Broad-area laser diodes based on AlGaAsSb/GaInAsSb QWs exhibit threshold current densities lower than 1 kA.cm-2 whereas narrow-ridge lasers operate cw above room temperature. Our results open the way to the epitaxial integration of a variety of IR lasers on on-axis Si.
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