Dr. Lee A. Elizondo Profile

Dr. Lee A. Elizondo

Senior Scientist at Lockheed Martin Corp

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Publications (4)

Proceedings Article | 3 September 2015 Paper

Advanced EO/IR technologies at DARPA/MTO

Jay Lewis, Nibir Dhar, Lee Elizondo, Ravi Dat

Proceedings Volume 9609, 960902 (2015) https://doi.org/10.1117/12.2192887

KEYWORDS: Cameras, Long wavelength infrared, Sensors, Infrared radiation, Infrared imaging, Staring arrays, Short wave infrared radiation, Defense technologies, Defense and security, Mid-IR

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Proceedings Article | 19 September 2013 Paper

Advanced imaging systems programs at DARPA MTO

Nibir Dhar, Lee Elizondo, Ravi Dat, Shelly Elizondo

Proceedings Volume 8868, 886802 (2013) https://doi.org/10.1117/12.2032203

KEYWORDS: Cameras, Short wave infrared radiation, Long wavelength infrared, Sensors, Photons, Staring arrays, Imaging systems, Thermography, Readout integrated circuits, Visible radiation

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Proceedings Article | 21 May 2011 Paper

Large format high-operability SWIR and MWIR focal plane array performance and capabilities

James Bangs, Mark Langell, Madhu Reddy, Leon Melkonian, Scott Johnson, Lee Elizondo, Kimon Rybnicek, Elyse Norton, Frank Jaworski, James Asbrock, Stefan Baur

Proceedings Volume 8012, 801234 (2011) https://doi.org/10.1117/12.887417

KEYWORDS: Semiconducting wafers, Sensors, Staring arrays, Mercury cadmium telluride, Detector arrays, Silicon, Mid-IR, Quantum efficiency, Readout integrated circuits, Infrared detectors

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High-performance large-format detector arrays responsive to the 1-5μm wavelength range of the infrared spectrum fabricated using large area HgCdTe layers grown on 6-inch diameter (211) silicon substrates are available for advanced imaging applications. This paper reviews performance and capabilities of Raytheon Vision Systems (RVS) HgCdTe/Si Focal Plane Arrays (FPA) and shows 2k x 2k format MWIR HgCdTe/Si FPA performance with NEdT operabilities better than 99.9%. SWIR and MWIR detector performance for HgCdTe/Si is comparable to established performance of HgCdTe/CdZnTe wafers. HgCdTe devices fabricated on both types of substrates have demonstrated very low dark current, high quantum efficiency and full spectral band fill factor characteristic of HgCdTe. HgCdTe has the advantage of being able to precisely tune the detector cutoff via adjustment of the Cd composition in the MBE growth. The HgCdTe/Si detectors described in this paper are p-on-n mesa delineated architecture and fabricated using the same mature etch, passivation, and metallization processes as our HgCdTe/CdZnTe line. Uniform device quality HgCdTe epitaxial layers and application of detector fabrication processes across the full area of 6-inch wafers routinely produces high performing detector pixels from edge to edge of the photolithographic limits across the wafer, offering 5 times the printable area as costly 6×6cm CdZnTe substrates. This 6-inch HgCdTe detector wafer technology can provide applications demanding very wide FOV high resolution coverage the capability to produce a very large single piece infrared detector array, up to a continuous image plane 10×10 cm in size. Alternatively, significant detector cost reduction through allowing more die of a given size to be printed on each wafer is possible, with further cost reduction achieved through transition towards automated detector fabrication and photolithographic processes for both increased yields and reduced touch labor costs. RVS continues to improve its FPA manufacturing line towards achieving low cost infrared FPAs with the format, size, affordability, and performance required for current and future infrared applications.

Proceedings Article | 4 May 2010 Paper

Performance of MWIR and SWIR HgCdTe-based focal plane arrays at high operating temperatures

Leon Melkonian, James Bangs, Lee Elizondo, Ron Ramey, Ernesto Guerrero

Proceedings Volume 7660, 76602W (2010) https://doi.org/10.1117/12.850849

KEYWORDS: Short wave infrared radiation, Mid-IR, Sensors, Staring arrays, Mercury cadmium telluride, Infrared sensors, Readout integrated circuits, Silicon, Temperature metrology, Molecular beam epitaxy

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