A DFB laser diode is forced to operate in feedback Regime V by omitting the laser isolator and using an extended cavity mode. The DFB laser diode is coupled to a Fiber Bragg Grating (FBG) that has a reflectivity based on parameters extracted from optical back-reflection measurements. A stable wavelength, narrow linewidth and low relative intensity noise (RIN) were obtained using the proposed configuration. A DFB diode laser coupled to the FBG achieved a RIN level of (-158.5 dB/Hz) at a 1 GHz frequency offset, comparable to results obtained for a DFB diode laser with an isolator (-157.9 dB/Hz), for the same average optical power (5.1 dBm) at 1310 nm.
A differential active pixel sensor in present day CMOS technologies is described. The primary goal of the architecture is to reduce visible noise artifacts in the output image. Artifacts caused by gain mismatches among pixel elements, kTC noise, fixed-pattern noise due to reset mismatches, and corrupted pixels are considered. The architecture enables scan-based image
processing on the image at high data rates while allowing the use of low speed (compared to conventional architectures) components.
Analytical expressions for the intensity and frequency/phase noise of single mode semiconductor lasers based on quantum-mechanical rate equations are derived. Correlated photons, electrons, and phase Langevin noise sources and their auto and cross-correlation relations are presented along with a novel self-consistent normalized laser model that includes the laser's correlated noise sources. A Symbolically Defined Device (SDD) is constructed using the proposed normalized model and implemented in Agilent's Advanced Design System (ADS) CAD tool. Dynamic laser characteristics are predicted using the SDD implementation for 1300 nm InGaAsP/InP lasers. The results of time domain dynamic simulations of photons, carriers, optical output power, and phase - with and without the effects of the noise - are presented. Simulation results are used to show the effects of random noise on both the phase and optical power output of semiconductor lasers. Simulation results are analyzed to demonstrate the resonance frequency shift dependence on the bias current levels, the relation between the frequency response and the bias current and the dependence of the laser line width broadening on the frequency fluctuations. Comparison between the presented results and other published results (simulations and measurements) show good agreement while achieving simulation time enhancement. The suitability of the proposed models for the study and characterization of the performance of complete systems in both circuit and system simulations is examined.
Proceedings Volume Editor (2)
This will count as one of your downloads.
You will have access to both the presentation and article (if available).
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.