We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (1122) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial
lateral overgrowth GaN with (11 2 2) facets on the structural and optical properties were investigated via
photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW
samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two
distinguish peaks attributed to quantum wells with wide range wavelength. Raman E2 (high) signals revealed a partially
relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift
between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time
(equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the
quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by
carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes
shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (1122) facets.
Temperature dependence of PL decay time τPL shows an interesting behavior of τPL with temperature.
We report growth of InGaN/GaN multi-quantum-wells (MQWs) structures and GaN layers on
silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). The growth
conditions were tuned to realize blue-green emission peaks centered around 420-495 nm from such MQWs on
SOI. X-ray diffraction, atomic force microscopy, scanning electron microscopy, and photoluminescence
techniques were used to characterize the MQWs. Using a combination of selective dry etching techniques,
GaN micromechanical structures are demonstrated on silicon-on-insulator (SOI) substrates. The dry releasing
technique employs a controlled gas phase pulse etching with non-plasma xenon difluoride (XeF2), which
selectively etches the Si overlayer of SOI, thus undercutting the GaN material on top. The mechanical
properties of these released microstructures are characterized by micro-Raman spectroscopy. Such approach
to realize multi-color light-emitting InGaN/GaN MQW structures and GaN micromechanical structures on
SOI substrates is suitable for the integration of InGaN/GaN-based optoelectronic structures on SOI-based
micro-opto-electromechanical systems (MOEMS) and sensors.
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