Source and mask optimization (SMO) technology is an increasingly important resolution enhancement technology (RET) that can optimize the source and mask. Various SMO methods have made great progress in terms of computational efficiency and pattern fidelity. Besides, process window (PW) is also an important indicator to evaluate the performance of lithography imaging. PW consists of exposure latitude (EL) and depth of focus (DOF). However, currently, there are few SMO methods that can directly improve EL. In this paper, we propose an EL aware SMO (ELASMO) method by innovating a new penalty function for improving the exposure latitude. Compared to the conventional SMO, the proposed ELASMO can significantly enhance aerial image contrast and enlarge the exposure latitude from 5% to 11% under the premise of ensuring imaging fidelity. ELASMO achieves high-fidelity lithography in a larger process window.
The resolution and the field-of-view (FOV) of the Mueller microscope are mutually limiting. The increasing magnification exponentially reduces the FOV of microscopic images, which hinders the acquisition of high-resolution Mueller polarization images with large FOV. To address this problem, we propose a scanning splice method for the Mueller microscope. In this method, an optimized image stitching arithmetic, which specially restricts the selection of feature points to ensure the consistency of stitching results of multiple groups of images with the same position and different polarization states, is combined with Mueller polarization detection techniques. In addition, the combination involved can correct the slight jitter error of the system caused by the rotation of the wave plate during Mueller polarization detection. The experiment results demonstrate that this optimized arithmetic is more accurate than the traditional image stitching arithmetic. This research provides the possibility of the development of the whole slide scanning Mueller microscope.
Source optimization (SO) is an extensively used resolution enhancement technology which can improve the imaging performance of optical lithography. To improve the computational efficiency of traditional SO, compressive sensing (CS) has been involved. In the CS-SO theory, the source pattern needs to be presentation as sparsely as possible by sparse basis, because the sparsity of source pattern can significantly improve the recovery performance of CS-SO. Therefore, the selection of the sparse basis can affect the performance of CS-SO. Discrete Fourier transform (DFT) basis, especially its variant discrete cosine transform (DCT) basis has been widely used in CS. Furthermore, some overcomplete bases have also been used in many fields. In this paper we present a comparison of sparse-based full chip SO with spatial basis, DCT basis, DFT basis, overcomplete DCT (ODCT) basis, overcomplete DFT (ODFT) basis and haar wavelet basis. The full chip SO problem is formulated as a cost function of multi-objective adaptive optimization, and then a soft threshold iterative (IST) algorithm is used to obtain the optimized source pattern. The simulation results show that the sparse-based method can effectively improve the imaging performance. Exactly, in terms of imaging fidelity, spatial, DCT, DFT, ODCT, and haar wavelet bases are similar, and better than the ODFT basis. However, in terms of optimizing speed, the spatial and DCT basis can converge to an acceptable SO solution at a faster speed than other bases.
Fast source pupil optimization (SO) has appeared as an important technique for improving lithographic imaging fidelity and process window (PW) in holistic lithography at 7-5nm node. Gradient-based methods are generally used in current SO. However, most of these methods are time-consuming. In our previous work, compressive sensing (CS) theory is applied to accelerate the SO procedure, where the SO is formulated as an underdetermined linear problem by randomly sampling monitoring pixels on mask features. CS-SO theory assumes that the source pattern is a sparse pattern on a certain basis, then the SO is transformed into a L1-norm or Lp-norm (0<p<1) image reconstruction problem. However, above methods are relaxation approaches of L0-norm method for convenient achievement. In this paper, to our best knowledge, transformed L1 penalty (TL1) and the difference of convex functions algorithm (DCA) for TL1 (DCATL1) are first developed to solve this inverse lithography SO problem in advantages. The source pattern is optimized by minimizing cost function pattern error with TL1 penalty. The DCATL1 method decomposes this cost function into the difference of two convex functions. By linearizing one convex function, the SO procedure can be transformed into a sequence of strongly convex minimization sub-problems, which can be accurately and efficiently solved by the Fast Alternating Direction Method of Multipliers (Fast ADMM) algorithm. Compared to previous methods, DCATL1 method can simultaneous realize fast and robust SO.
Mueller polarization imaging technology can fully reflect the polarization characteristics of the sample, and can be used
as a method for imaging thin pathological sections of collagen tissue samples. So far, there has been no actual publication
about the detection of transplanted tendons using Mueller matrix imaging technology. In this paper, we apply the Mueller
imaging polarimeter for quantitative detection of rabbit transplanted tendon samples with or without tenocytes. The polar
decomposition parameters of the Mueller matrix of the rabbit tendon tissues are calculated and analyzed. Quantitative
analysis showed that tenocytes caused the decrease of tendon fibers retardance and the increase of standard deviation of
tendon fibers orientation. The experimental results indicate that the retardance and the orientation angle parameters of the
Mueller matrix can be used as quantitative indicators to distinguish rabbit tendon tissues with or without tenocytes and
can reveal the structural characteristics of collagen fiber bundles, which may provide more useful information for the
evaluation of tendon transplantation.
Mueller matrix polarization imaging system (MMPIS) is one of the most prospective tools that can provide a highresolution image of polarization properties for samples or systems. The MMPIS is composed of a laser source, polarization state generator (PSG), the sample, polarization state analyzer (PSA), a high-resolution imaging optics, collimating optics, and a CCD camera. Usually, the traditional eigenvalue calibration method (ECM) can be used to calibrate PSG and PSA. However, the imaging and collimating optics are not calibrated in MMPIS. For the highnumerical-aperture imaging system, the imaging and collimating optics can behave as polarization aberration modifying the tested sample’s polarization properties leading to the erroneous judgment which affects the measurement accuracy of the MMPIS. In this paper, the multi-step eigenvalue calibration method (MECM) is explored to calibrate MMPIS. For the MECM applied to calibrate MMPIS, the calibration samples are required to place in different positions of the light path and the ECM is adopted in each position. In this way, the Mueller matrices of PSG and PSA, as well as the Mueller matrices of imaging optics and collimating optics can be obtained through calculation. To evaluate the measurement accuracy of MMPIS, the sample with known polarization properties such as air is measured. The experimental results show that before calibrating the imaging optics and collimating optics the measurement accuracy of MMPIS is 0.0124, while after the measurement accuracy has been improved to 0.0046, which is 62.90% better than before. The MECM can be used for the requirements of high accuracy measurement.
Vortex beams have drawn much attention for their distinct properties. When vortex beams propagate along optical axis, they exhibit complicated physical phenomena. Under tight focusing condition, we investigate the defocusing behavior of two superposed vortex beams with opposite but arbitrary topological charge. The results reveal that the intensity distribution of the focus will be petal-shaped if the two topological charges have opposite sign, where the number of intensity lobes in the focal plane is |m− n + 2| . Meanwhile, we find that the focusing intensity of topological charge m = −n would not appear the helical structure when a defocusing occurs. Otherwise, the defocusing would result in the helical structure of intensity when m ≠ −n , and the rotation of helical structure depends on the sign of m + n . Of which clockwise rotation of defocus intensity is related to the negative m + n , and anti-clockwise direction corresponds to the positive m + n . Furthermore, the helical degree of the helical intensity also depends on the magnitude of m + n . The interesting results obtained in this paper will lead to further advances in the field of optical vortices.
Measurement of the probability density of polarization state need specific phase modulator.However, the existence of mechanic processing error results in the error of the polarization property of modulator. Meanwhile, the error of the measurement system’s alignment is also existing. All of this errors need to calibrate to ensure the accuracy of measurement. In this paper, We present a self-calibration method based on the theory of the probability density of polarization state which is represented in Mueller formalism. After measuring the probability density of polarization state, we can extract the Stokes parameters of a light field of unknown polarization in a single irradiance measurement, by finding the maximum of the probability density of polarization state.
To ensure the good performance of hyper-numerical-aperture (NA) freeform surfaces lithography objective, not only the aberration should be decreased as much as possible in theory design stage, but also all the tolerances should be allocated reasonably and controlled rigorously in the manufacturing process. Therefore, reasonable tolerance analysis for projection objective is needed to maximally make up for the image quality deterioration caused by manufacture and assembly errors. According to the variation sensitivity between Zernike aberration and the single tolerance, effective compensators for individual aberrations can be chosen during tolerance analysis. As an example the method is applied to the tolerance analysis for an NA1.2 catadioptric projection objective with freeform surfaces designed by us. The results show that, after tolerance analysis using the compensators selected by this method, the root mean square (RMS) wavefront error of the projection objective is less than 0.015λ (λ=193 nm) at 90% probability, which meets the image quality requirement of lithographic projection objective for 10 nm technology node.
Optical vortices have been applied in many fields for their distinct properties. In this paper, we explore the focusing intensity distribution of the radially and azimuthally polarized vortex beam (VB) with varying beam waist parameter. The results reveal that low beam waist parameter is beneficial to form a super-resolution spot. In the condition of the high beam waist parameter, the focusing intensity of radially and azimuthally polarized VB along the longitudinal direction would split to multi-spots. Meanwhile, the focal plane intensity distribution become non-symmetrical as well as expansion when the beam waist parameter increase. Therefore, appropriate beam waist must be chosen for the two kind beam in actually application. Furthermore, we also investigate the focal properties affected with helical phase TC. The results reveal that the focal spot size of radially polarized VB along the longitudinal gradually increases with the order of helical phase. The peak intensity ratio of the longitudinal and transverse field of radially polarized VB holds a maximum value when helical phase order l = 0 and becomes to minimum when l =1 , then gradually increases with the order of helical phase. For the azimuthally polarized VB, when l =1 , the focal intensity would exhibit an excellent small solid spot. The results obtained in this paper are useful for application of radially and azimuthally polarized VB.
As the numerical aperture (NA) of the projection objective increases continually and the exposure pattern feature size decreases gradually, the polarization illumination is introduced into the lithography system. Therefore, it is necessary to design a wide field-of-view (FOV) wave plate to eliminate the effect of oblique incident light on the phase delay of the traditional zero order wave plate effectively. The quarter-wave plate with 20° FOV based on birefringent optical crystals has been designed in our laboratory by Dong et al. In order to obtain a wider FOV, we explore a previously reported Ag patch ultrathin quarter-wave plate whose performances were not analyzed by finite-difference time-domain (FDTD) method. In this paper, we mainly investigate three performances of the Ag patch quarter-wave plate consisting of FOV, achromatic band and achromatic band transmission. The simulation results indicate that when phase difference error is controlled at ±2° (1) the range of FOV of the quarter-wave plate is ±29° at 632nm; (2) the achromatic band ranges from 618nm to 658nm at normal incidence; (3) the achromatic band transmission ranges from 11% to 30%. Compared with the traditional wave plate made of birefringent crystals, the achromatic band and transmission is slightly lower but the FOV of this quarter-wave plate is much wider. Thus, this Ag patch nanoscale wide FOV quarter-wave plate can be effectively used in high NA lithography projection exposure systems to reduce the polarization aberration caused by oblique incidence of light.
Source mask optimization (SMO) is a leading resolution enhancement technique in immersion lithography at the 45-nm node and beyond. Current SMO approaches, however, fix the numerical aperture (NA), which has a strong impact on the depth of focus (DOF). A higher NA could realize a higher resolution but reduce the DOF; it is very important to balance the requirements of NA between resolution and the DOF. In addition, current SMO methods usually result in complicated source and mask patterns that are expensive or difficult to fabricate. This paper proposes a parametric source-mask-NA co-optimization (SMNO) method to improve the pattern fidelity, extend the DOF, and reduce the complexity of the source and mask. An analytic cost function is first composed based on an integrative vector imaging model, in which a differentiable function is applied to formulate the source and mask patterns. Then, the derivative of the cost function is deduced and a gradient-based algorithm is used to solve the SMNO problem. Simulation results show that the proposed SMNO can achieve the optimum combination of parametric source, mask, and NA to maintain high pattern fidelity within a large DOF. In addition, the complexities of the source and mask are effectively reduced after optimization.
As the numerical aperture (NA) increasing and process factor k1 decreasing in 193nm immersion lithography, polarization aberration (PA) of projection optics leads to image quality degradation seriously. Therefore, this work proposes a new scheme for compensating polarization aberration. By simulating we found that adjusting the illumination source partial coherent factors σout is an effective method for decreasing the PA induced pattern critical dimension (CD) error while keeping placement error (PE) within an acceptable range. Our simulation results reveal that the proposed method can effectively compensate large PA in actual optics.
As the numerical aperture (NA) of 193nm immersion lithography projection optics (PO) increasing, polarization
aberration (PA) leads to image quality degradation seriously. PA induced by large incident angle of light, film coatings
and intrinsic birefringence of lens materials cannot be ignored. An effective method for PA compensation is to adjust
lens position in PO. However, this method is complicated. Therefore, in this paper, an easy and feasible PA
compensation method is proposed: for ArF lithographic PO with hyper NA (NA=1.2), which is designed by our
laboratory, the PA-induced critical dimension error (CDE) can be effectively reduced by optimizing illumination source
partial coherent factor σout. In addition, the basic idea of our method to suppress pattern placement error (PE) is to adopt anti-reflection (AR) multi-layers MgF2/LaF3/MgF2 and calcium fluoride CaF2 of [111] crystal axes. Our simulation results reveal that the proposed method can effectively and quantificationally compensate large PA in the optics. In particular, our method suppresses the dynamic range of CDE from -12.7nm ~ +4.3nm to -1.1nm ~ +1.2nm, while keeping PE at an acceptable level.
Source optimization (SO) has become increasing important to improve the process window (PW) of optical
lithography systems. Most of current SO approaches modify the source intensity distribution, but fix the polarization
state thus limiting the degrees of optimization freedom. In addition, these SO methods simultaneously
optimize the imaging performance on focal and defocal planes to extend the depth of focus (DOF) at the cost of
increasing the computational complexity. To overcome these above limitations, this paper develops a pixelated
gradient-based polarization optimization (PO) method to effectively extend the PW by seeking for the optimal
polarization angle for each point source. In order to accelerate the optimization process, the proposed method
tries to optimize a compact cost function incorporating the integral imaging performance over a certain defocus
range, rather than taking into account the separate performance metrics on different imaging planes. A gradientbased
algorithm is exploited to iteratively modulate the polarization angles to keep reducing the cost function.
Finally, a post-processing method is applied to reduce the complexity of the optimized polarization angle pattern
for improving its manufacturability. Simulations show that the proposed PO algorithm will achieve approximate
two-fold speedup compared to the method using a traditional cost function. The proposed PO algorithm is
potential to be applied independently or associated with source and mask optimizations to further improve the
lithographic performance.
Publisher’s Note: This paper, originally published on 3/31/14, was replaced with a corrected/revised version on
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Optimization technologies have been widely applied to improve lithography performance, such as optical proximity correction and source mask optimization (SMO). However, most published optimization technologies were performed under fixed process conditions, and only a few parameters were optimized. A method for mask, process, and lithography-tool parameter co-optimization (MPLCO) is developed to extend the process window. A normalized conjugate gradient algorithm is proposed to improve the convergence efficiency of the MPLCO when optimizing different scale parameters. In addition, a parametric mask and source are used in the MPLCO that could obtain exceedingly low mask and source complexity compared with a traditional SMO.
For hyper-numerical aperture (NA) lithographic optics, one of the design goals is to minimize polarization aberration
(PA). However PA represented by Jones pupil can not be acquired by design software CODE V™ directly. And most
researchers generate PA by computer randomly in study of various presentation of PA. Optical designers and instrument
developers should analyze the realistic PA in optical design procedure, which is most important for controlling the PA
before the optics is fabricated. This work presents a technique for extracting and analyzing the realistic PA caused by
large incident angle of light, film coatings and intrinsic birefringence of lens materials in hyper-NA optics. The PA and
its decomposition is obtained and analyzed for optics with different coatings using the technology in this paper. The
results show that the subset aberrations of PAs can compensate each other via different coatings on the PO. The results
also reveal that coating design should balance the transmission and its aberration (apodization).
High Numerical Aperture (NA) extreme ultraviolet lithography (EUVL) with different reduction is one option for 16 nm node and below. In our work, as NA increases to about 0.45, we discuss the impacts of reduction ratio of 5 or 6 on resist image performance such as Horizontal-Vertical (H-V) critical dimension (CD) bias for various incident angles and CD Uniformity induced by mask CD errors at wafer level. Commercial software PROLITH ™ and in-house program are adopted in simulation referred above. In conclusion, resist image performance can be improved with the increase of reduction ratio. H-V CD Bias with reduction ratio of 6 is obviously smaller than that with reduction ratio of 5 at maximum incident angle. Additionally, CD Uniformity (nm, 3 sigma) induced by mask CD errors for 5× optics system is larger, which means image quality is worse at 5× optics system.
Lithography is the key technology to semiconductor manufacture. With the rapid improvement of projection lens and
resolution enhancement technique (RET), the essence of the illuminator can never be overestimated in the lithography
system. However, due to various and complex components and the fact that fewer design methods were proposed in the
papers compared with those of the projection lens, a detailed design method for the illuminator is needed.
This paper introduces the detailed design process for the illuminator in a NA 0.75 lithography system on 90nm node. The
exposure field at the reticle plane is 104mm×42mm. The illuminator mainly consists of three parts: the beam shaping
unit, the uniformizer and the relay lens. In order to construct the matching relationship among the various components in
the illuminator, a design method based on the fly’s eye, which is the core and starting point, has been proposed. This
method has been successfully used in small field lithography system. With this method, the matching relationship in the
illuminator can be determined easily, and the illumination NA and size are guaranteed simultaneously. Furthermore, the
detailed design for some key issues in the illuminator is given: the diffractive optical element (DOE), zoom lens and
axicon are used together to generate different sources in the entrance pupil of the projection lens; the condenser design;
and 1X relay with two cylinder lenses to achieve trapezoid intensity distribution in the scan direction. A demonstration
simulation result is given, and the uniformity of the non-scan and scan direction reached 1.2% and 1.7% respectively
under all illumination modes. The result showed good performance and the requirements of the lithography tools have
been met.
In 45nm technology node and beyond with hyper NA and Off-axis Illumination (OAI) lithography, mask induced
polarization effect is remarkable. At this scale, traditional Kirchhoff approximation, in which the masks are considered to
be infinitely thin objects, is no longer valid. Rigorous three-dimensional (3D) mask model is required for precise
evaluation of mask diffraction. In this paper, a general 3D mask model based on the rigorous coupled-wave analysis
(RCWA) is presented, and the change of polarization state as a function of mask and incident light properties is
evaluated. The masks considered are the binary chrome mask and 10% Si-Si3N4 attenuated phase shifting mask. The results show that the mask induced polarization effects depend on the mask and incident light properties, such as mask material, absorber thickness, mask pitch, feature size, the polarization and incident angle of the light.
Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions
should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs)
including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE)
are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve
the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the
impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more
significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and
Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been
evaluated by simulation, which is carried on PROLITHTM X3 and in-house software IntLitho. And then, the MSD’s
tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence
of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error
becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that
the tolerance of MSD decreases due to MMEs’ existence and mainly depends on the mask pattern’s pitch.
More and more factors influence the lithography performance with the shrinkage of Critical Dimension (CD). CD error
raised by litho tools imperfection cannot be ignored any more. Flare control and Numerical Aperture (NA) adjustment
play a critical role in 90nm node dry lithography. In this paper, the respective and the joint impact of flare and NA error
for 90nm dense line, semi-dense line and isolated line have been studied by simulation. The results show that the change
of CD error is approximately linear with flare and NA error respectively. CD error and Depth of Focus (DOF) error for
dense line are sensitive to the change of flare and NA error, especially the sensitivity of CD error to flare and NA error of
dense line is larger than that of semi-dense line and isolated line. The placement error caused by flare and NA error is
less than 10-3 nm for these patterns. The joint impact of flare and NA error on lithography performance is not the linear sum of the results that two factors change respectively; there is a certain coupling effect between these two factors. For these patterns, the sensitivity of CD error to flare is larger than that to NA error, but a larger NA error can compensate the effect caused by flare. Therefore, the tolerance of flare can be relaxed by adjusting NA.
As semiconductor feature sizes continue to shrink, the allowable error margins for Critical Dimension (CD) is getting
increasingly tight. However multiple errors are inherent in the lithography system which could have severe impact on
CD control and process latitude. It is indispensable to analyze and balance the influences of various errors in order to get
larger tolerance for errors within allowable error margins for CD. In this paper, by using PROLITHTM X3 and in-house software IntLitho, we study the cross-talk of the dominative errors of numerical aperture, coherent factors, mask CD,
flare and analyze its influence on lithography performance. The results show that the tolerance for the errors can be
released when some errors impact on CD is counterpoised by that arising from another error in usable process window.
Moreover multiple combinations of errors or tolerances can be used for such compensations. Finally we supply a method
to perform the compensation of multi errors impact on CD and process window, which is the essence of co-design or cooptimization of lithography tool for rigorous CD control.
In order to detect the liquid leak, many researchers present different methods. However, traditional detection methods are
electrical methods, which are costly and unsafe. In this study, we present a LPG sensing system for leak detection of oil
storage tanks. Since LPG is sensitive to external refractive index changes LPGs can be used as sensors to detect oil leak.
In self-powered wireless sensor nodes, the efficiency for environmental energy harvesting, storage and
management determines the lifetime and environmental adaptability of the sensor nodes. However, the method of
improving output efficiency for traditional photovoltaic power generation is not suitable for a solar micro-power
system due to the special requirements for its application. This paper presents a solar micro-power system
designed for a solar self-powered wireless sensor node. The Maximum Power Point Tracking (MPPT) of solar
cells and energy storage are realized by the hybrid energy storage structure and "window" control. Meanwhile, the
mathematical model of energy harvesting, storing and management is formulated. In the novel system, the output
conversion efficiency of solar cells is 12%.
In this paper, a theoretical analysis of the optimal package diameter of fiber Bragg grating (FBG) pressure sensors is
presented. We use the theory of elastic to analyze the relation between the pressure sensitivity and the package diameter
of FBG with d ifferent materials, structures. Then we can get the optimal package diameter of FBG pressure sensor for a
certain package structure and material. Through the following experiments, it can be proved that the theoretical analysis
is correct. This analysis could not only significantly enhance the pressure sensitivity, but also provide the optimal
package diameter of FBG for the practical applications.
Temperature-independent micro-displacement measurement using a single fiber Bragg grating based on broadened reflection spectrum is proposed and experimentally demonstrated. The structure of specially designed bending cantilever beam (BCB) is proposed. The BCB induces axial strain gradient along the sensing FBG, resulting in a Bragg bandwidth modulation. The broadening of FBG spectrum bandwidth and the reflected optical power correspond to micro-displacement changes, insensitive to spatially uniform temperature variations. For a displacement variation of 20mm and a temperature change from 20°C to 100°C, the micro-displacement measurement deviation error is ±0.12mm without any temperature compensation. Through optical power detecting by a pin photodiode (PD), the micro-displacement sensor avoids complex demodulation process and potentially costs little.
Design and construction of temperature-insensitive fiber Bragg grating (FBG) liquid level sensor based on bending cantilever beam (BCB) is proposed and demonstrated. The BCB induces spatially gradient strain on the unique sensing FBG, resulting in a Bragg bandwidth modulation. The broadening of FBG spectrum bandwidth and the reflected optical power are corresponded to liquid level changes, insensitive to spatially uniform temperature variations. In the liquid-level range of 500 mm and temperature change from 20oC to 80oC, the liquid level measurement fluctuates less than 2% without any temperature compensation. By a pin-photodiode (PD) optical power detecting, the liquid-level sensor avoids expensive and complex demodulation techniques and potentially costs low.
An innovative algorithm based on the evolutionary programming (EP) method is developed for recovering distributions of axial strain along a fiber grating from its reflection spectral response. The proposed method exhibits a number of attractive features that prove to be effective for solving the inverse problems. The basics of EP are reviewed and the detailed programming procedures of the proposed algorithm are presented. By combining EP and the matrix method for calculating the reflection spectrum of a FBG, we obtain a new method for the distributed sensing. The numerical simulations show good agreements between the original and the reconstructed strain profiles.
Simultaneous measurement of temperature and force using a single fiber Bragg grating based on broadened reflection spectrum is proposed and demonstrated. The wavelength peak shift and the bandwidth broadening with the change of temperature and force allow discrimination between the temperature and force effects. Standard deviation errors of 1.8°C and 0.16N have been obtained with temperature and force ranges of up to 20~100°C and 0~8N, respectively.
A set of coupled wave equations of multi-channel all-fiber acousto-optic modulation is deduced. The solutions of equations are obtained. The novel 2-channel surface acoustic wave (SAW) all-fiber acousto-optic modulator is presented and developed. Experimental results show modulator performance agrees with theoretical analyses.
The general format of multifrequency acousto-optic coupled wave equation including normal and abnormal acousto-optic interaction is presented in this paper. The solutions of the equations for two independent ultrasonic wave signals in the Bragg limit are put forward. These include diffraction efficiency, compression, cross modulation and additional intermodulation intensities. Especially the differences between the abnormal and normal diffraction are pointed out and analysed. The experimental results are in good agreement with theoretical analyses.
In this paper, an all-fiber electric voltage sensor based on high birefringence fiber loop mirror is presented. This voltage sensor is composed of a 3dB coupler and ~8m high birefringence (HiBi) fiber, part of which is affixed to a piezoelectric translator (PZT). When the voltage applied on the PZT changes, the transmission spectrum of this HiBi fiber loop mirror will shift accordingly. As the direct current voltage increases to 75.2V, the phase shift of this HiBi fiber loop mirror is nearly π rad and the transmission peak changes by about half of a period. This voltage sensor has a sensitivity of 0.004nm/V and its linearity reaches 0.99878. Moreover, we have theoretically studied transmission spectrum shift of this HiBi fiber loop mirror when the length and refractive index difference of HiBi fiber are altered.
In this paper, we present a noise figure improved double-pass L-band EDFA based on HiBi fiber loop mirror as the ASE suppressor. By utilizing a HiBi fiber loop mirror as the wavelength-dependent reflector, the ASE light has been weakened to a large extend, which increases the inversion ion population at the input end of erbium-doped fiber. Therefore, the noise figure of this double-pass EDFA has been much improved. Compared with that of the conventional double-pass structure based on 3dB fiber loop mirror, the NF of our novel configuration is reduced by 2.06~5.33dB for the ten sampled signal wavelength (1580.84nm~1588.48nm).
We propose a novel temperature compensation method that HBF is mounted on a piece of organic glass. It can lessen its temperature sensitivity to 0.059 nm/K, which are two orders of magnitude lower than that of an uncompensated HBF loop mirror. It is feasible that HBF loop mirror packaged with a large thermal-expansion material is insensitive to ambient temperature perturbation. This technique is beneficial to the practicality of loop mirror filter based fiber sensors.
In this paper, a filter which is cascaded n-stage high-birefringence fiber loop mirrors is presented. The related theory is analyzed and an expression cascaded with n-stage high-birefringence fiber loop mirrors of output intensity is given. Since experiment results are consistent with simulation outcomes, our theory is proved. Compared with a single stage high-birefringence filter, the cascaded filter shows more complex transmission Characteristics. Therefore, this kind of filter is flexible transmission spectrum and low cost for manufacture.
A novel pressure sensor with FBG partly packaged by a metal tube is presented. The thermal-strain cross effect can be avoided. Moreover, its pressure sensitivity is -2.44×10-3/MPa with the range from 0 to 0.44 MPa, which is 1200 times as that of a bare fiber grating. The linearity of this sensor reaches 0.9986.
In this paper, we present a novel structure discretely tunable linear cavity fiber laser. A fiber Bragg grating (FBG) and a high birefringence fiber loop mirror are used as cavity reflectors. By changing the deflection of an equivalent-strength beam, the reflective wavelength of the FBG can be tuned accordingly. Since the reflectivity of the HiBi fiber loop mirror varies periodically, the output laser of this Fabry-Perot laser based on HiBi fiber loop mirror and FBG can be tuned discretely. From 1543.8nm to 1555.2nm, 15-wavelength lasers (SMSR>54dB) with approximately 0.8nm spacing have been obtained and the output laser intensity reaches about 2.5dBm in average. Nevertheless, some 0.8nm spacing lasers much weaker than the above lasers have also been observed. And they are expected to be eliminated by using narrower linewidth FBG as reflective mirror.
In this paper, we propose a novel all-fiber variable optical attenuator based on high birefringence fiber loop mirror. Part
of the birefringence fiber was pasted onto an equivalent-strength beam and by applying a strain with a high precision screw thruster on the free end of the beam, we observed that the transmission spectrum of the fiber loop mirror shifted with nearly unaltered shape. The attenuation at 1551nm is more than 30dB with about 6dB insertion loss. By tuning the angle between the fast or slow axes of input and output planes of the birefringence fiber, the insertion loss of this VOA can be minimized to no more than 1.5dB. The wavelength shift of this VOA varies linearly (the linear correlation coefficient reaches 0.9979) with the deflection of the beam and it turns out good attenuation characteristics.
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