This work aims at illuminating an UTC-PD array with a multicore fiber towards multiple THz carrier generation. This photonics-based transmitter is expected to increase either the data rate via spatial multiplexing on different carriers or the emitted THz-power and therefore the transmission reach of THz systems operating in 300 GHz band. Preliminary results of the characterization of the sub-systems of the transmitter that is under development are presented here.
GaN-based multi-quantum well devices are promising candidates as photodetectors in the UV to visible spectral range. Their complex structure and the extreme input optical power density still poses problems of reliability. In the devices under test, degradation takes place when the optical power density reaches values higher than 44 W/cm2 , and consists in a reduction in the efficiency of the device and in its output current. This degradation process is not sudden and is caused by a gradual increase in the defect concentration, detected by means of photocurrent spectroscopy experiments, that suggest the role of gallium vacancies and/or their complexes as the physical origin. A secondary effect is the reduction in open circuit voltage, likely originating from an improvement in dopant and/or contact quality.
Thermal-induced index variations are experimentally observed with Schottky diodes; they are opposite to the
carrier induced ones, with an increase of optical index as high as 0.1, and a 1μs response time. It turns out that
the thermal effect can be an important limiting factor to the optical index change. In this paper we evaluate each
phenomenon separately (lifetime and thermal effects) and the influence of the thermal effects on the carrier
induced index variations.
Because electro-optic switches are key elements for the synthesis of large bandwidth, high dynamic, true time delay
optically controlled microwave antennas, we designed, fabricated and characterized a new digital optical switch grown
on InP substrate, and based on carrier-induced effects. The switching time is short (3ns) and there is no added noise on
the optical signal. By introducing this switch in a microwave optical link at 1GHz frequency, we demonstrate that a 72dB
microwave crosstalk (more than 36dB on the optical signal) can be achieved. The low current consumption of 60mA
makes our device suitable for the optical control of microwave antennas.
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