Reflective (thick) and semi-transparent (thin) Ni/Ag/Ni contacts were prepared on GaInN-based light-emitting diodes
(LEDs) and p-GaN/p-Al0.15Ga0.85N layer sequences. A light output power enhancement of 41% and forward voltage
reduction of 0.59 V were obtained compared to a Ni/Au contact for LEDs emitting at 400 nm with thick p-GaN contact
layers. The specific contact resistance of the Ni/Ag/Ni contacts on p-GaN/p-Al0.15Ga0.85N with varying p-GaN thickness
(5-20 nm) were determined by transmission line method and compared to Ni/Au contacts. Low resistive ohmic contacts
were obtained for a p-GaN thickness of less than 10 nm. The p-GaN layer can be completely omitted for the reflective
Ni/Ag/Ni contact. In addition, reflection and transmission of the Ni/Ag/Ni metallization schemes were investigated in the
ultra-violet spectral range. Thick Ni/Ag/Ni and thin Ni/Ag/Ni covered by Al are promising to serve as reflective contacts
for ultra-violet LEDs. The former for wavelength around 350 nm and the latter for wavelengths below 350 nm.
Near-UV LEDs emitting at around 400 nm can be used e.g. as pump light source in tri-phosphor RGB white
luminescence-conversion LEDs with high color rendering.1 Although non-thermal roll-over decreases towards shorter
emission wavelengths in GaInN-based LEDs, this effect still limits the efficiency of 400 nm emitting LEDs at current
densities above 50 A/cm2. One way to overcome non-thermal roll-over is to combine a GaInN wide-well active region
with the growth on low dislocation density (DD) substrates. Single-well LEDs with GaInN layer widths between 3 nm
and 18 nm were grown (a) directly on sapphire substrates with a resulting DD of 109 cm-2, (b) on low DD GaN templates
on sapphire (DD of 108 cm-2), and (c) on freestanding GaN substrates (FS-GaN, DD of 4×107 cm-2). At low current
densities (pulsed mode operation) the LEDs with a 3 nm GaInN QW active region showed the highest efficiency,
irrespective of the substrate. However, the electroluminescence (EL) efficiency peaks at around 50 A/cm2 and shows a
clear non-thermal roll-over towards higher current densities. The efficiency of LEDs with well widths >3 nm grown on
sapphire decreases with increasing well width over the whole range of current densities (≤300 A/cm2). However, when
grown on low DD GaN templates or FS-GaN, the efficiency of the LEDs with 11 and 18 nm wide GaInN layers
surpasses that of the conventional LEDs (well widths ≤6 nm) for current densities ≥250 A/cm2, yielding the highest EL
efficiency of all LED-structures.
There is a high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films
grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive material, which can be activated at roomtemperature
by ultraviolet (UV) light. In the present work we integrated the In2O3 sensing thin film and an (AlGaIn)N
based near-UV LED back-to-back on a single sensor chip. The integrated In2O3 film-LED sensor was exposed to varying
ozone concentrations ranging from 38 ppb to 726 ppb and found to be sensitive to even the lowest O3 concentration.
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