A twelve-junction monolithically-integrated GaAs phototransducer device with >60% power conversion efficiency and >14 V open-circuit voltage under monochromatic illumination is presented. Drift-diffusion based simulations including a luminescent coupled generation term are used to study photon recycling and luminescent coupling between each junction. We find that luminescent coupling effectively redistributes any excess generated photocurrent between all junctions leading to reduced wavelength sensitivity. This broadened response is consistent with experimental measurements of devices with high-quality materials exhibiting long carrier lifetimes. Photon recycling is also found to significantly improve the voltage of all junctions, in contrast to multi-junction solar cells which utilize junctions of differing bandgaps and where high-bandgap junctions benefit less from photon recycling.
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