Lithographic exposure tools in the deep-ultraviolet (DUV) region face challenges with contamination. Airborne molecular contamination is generally recognized as a severe threat in high-volume production of integrated circuits (ICs), and has recently also become of a concern in patterning of masks. When using high-energy photons at 248nm wavelength or lower, the risk of contamination may increase due to higher potential of breaking molecular bonds of organic species in the ambient of the optics. Especially resist outgassing during exposure may result in a build-up on the surface of the lens. The
photodissociated molecules may readily deposit on the optics depending on the interaction between the contaminants and the
lens surface and possibly cause a loss of transmission of light with time. Eventually the growth of the deposit will severely impact the throughput of the exposure tool, and in the worst case, necessitate a replacement of lens elements. Contamination control is therefore crucial for cost-effective DUV wafer and mask manufacturing. Trustworthy measurement methods as well as deep understanding of the mechanisms involved are of vital importance in order to understand and prevent molecular contamination. This paper discusses some of the factors influencing the deposition of hydrocarbon contaminants and also simulation work related to investigation of resist outgassing and contamination issues in the Sigma7300 laser pattern generator.
This paper treats a for the semiconductor industry somewhat different application: The first-ever manufacture of Diffractive Optical Elements (DOE’s) as directly written multilevel diffractive micro-reliefs using the DUV SLM-based Sigma7300 Mask. The reliefs were manufactured in the DUV Chemically Amplified Resist (CAR) FEP-171. This particular application is of direct interest since DOE’s are already incorporated in the Sigma7300 system. The design and manufacture are demonstrated with (1.) A Fan-out element and (2.) A logotype generator. The first attempts, reported here, resulted in a Fan-out element with diffraction efficiency of 64% compared to the theoretical design of 88%.
Airborne molecular contamination (AMC) in the form of bases, acids and condensable organic and inorganic substances threaten both costly and sensitive optics and mask pattern formation in the chemically amplified resists (CAR) used for both E-beam and laser lithography. This is particularly so for mask pattern generators due to the relatively long writing times. In the development work of the SLM-based DUV-laser mask pattern generator Sigma7300, AMC aspects have been taken into consideration from an early stage. That includes e.g. analysis and selection of construction materials and development of handling methods as well as application of chemical filtering systems. Tool manufacturer and filter supplier have together specified and designed efficient hybrid filtration systems for use in Sigma7300. This paper describes AMC aspects specific for mask pattern generators, the successful design actions of the Sigma7300 and verifying analyses of the processes.
One of the sub-functions in the Micronic Sigma 7300 mask writer is the 2:nd layer alignment system for writing of phase shift masks. The strategy chosen for performing PSM alignment is to use the DUV writing laser together with the spatial light modulator (SLM) to create a light stamp image, which is reflected on the first layer alignment marks. The reflected image is captured and measured with a DUV-sensitive CCD camera. Using the writing laser has many benefits since there is no position offsets coming from misalignment of multiple laser sources. The anti-reflection (AR) function in chemically amplified resists (CAR), bottom anti-reflex coatings (BARC) and top anti-reflex coatings (TARC) reduces reflectance for 248 nm incoming light. This could reduce the signal strength and accuracy of the alignment system as the 248 nm laser is used for the alignment. The paper focuses mainly on two issues, image contrast at different resist thicknesses and image contrast when AR coatings are used. The algorithm measuring the fist layer alignment mark positions is also described. The studies of this and results of the final PSM alignment system show that Micronic has found an efficient way of dealing with these issues.
Critical dimension control is becoming more and more critical in the mask making industry as the exposure wavelength goes down. For laser pattern generators, the move from traditional DNQ/Novolak based towards DUV chemically amplified resist processing was initially troublesome. The relative long total exposure time of pattern generators in contrast to wafer steppers, in combination with thick quartz substrates with relatively low heat capacity, may result in
reduced lithographic performance due to excessive diffusion of photogenerated acid. The photoresist polymer architecture play a large role in determining the acid diffusion characteristics and thereby also the image fidelity and resolution. In the Sigma7300 laser pattern generator the image is created by the spatial light modulator, which acts as a reflective computer-controlled reticle. By adopting a proper writing strategy, the negative effects of acid diffusion could be reduced. One component in the Sigma writing strategy is to expose the pattern in several passes that allows for dose compensation as well as averaging schemes to reduce CD errors. By adjusting the dose per pass and by keeping track of the delay times between each shot as well as the exposure path, a better control of the linewidth may be achieved for certain photoresist chemistry. In this study we present results from investigations of AZ DX 1100P and FEP-171 resists using different writing strategies.
The introduction of photomask laser pattern generators presents new challenges to system designers and manufacturers. One of the laser pattern generator's environmental operating challenges is Airborne Molecular Contamination (AMC), which affects both chemically amplified resists (CAResist) and laser optics. Similar challenges in CAResist protection have already been addressed in semiconductor wafer lithography with reasonable solutions and experience gained by all those involved. However, photomask and photomask equipment manufacturers have not previously had a comparable experience, and some photomask AMC issues differ from those seen in semiconductor wafer lithography. Culminating years of AMC experience, the authors discuss specific requirements of Photomask AMC. Air sampling and material of construction analysis were performed to understand these particular AMC challenges and used to develop an appropriate filtration specification for different classes of contaminates. The authors portray the importance of cooperation between tool designers and AMC experts early in the design stage to assure goal attainment to maximize both process stability and machine productivity in advanced mask making. In conclusion, the authors provide valuable recommendations to both laser tool users and other equipment manufacturers.
Proximity-compensated kinoforms were manufactured with direct-writing electron-beam lithography in two different resists, SAL 110 and PMMA. The kinoforms were blazed transmission gratings, with periods 4, 8, 16 pm 1 mm by 1 mm size, and a Fresnel lens, with 38 mm focal length and 3 mm by 3 mm size. The compensated gratings performed better than the uncompensated ones: for the 4 pm compensated grating the measured diffraction efficiency was 67%. It was 35% for the uncompensated grating. The Fresnel lens had diffraction limited optical performance with better than 85% efficiency. The compensation was made by repeated convolutions in the spatial domain or deconvolution in the Fourier domain using the electron-beam point-spread function.
We also present developing processes for PMMA and SAL 110 resists that are more appropriate for multilevel resist kinoforms manufactured with direct-write electron-beam lithography.
We report on direct-writing EBL manufactured, proximity compensated blazed transmission gratings. The proximity compensation is made using a non-linear iterative process in the spatial domain. The diffraction efficiency for a compensated 8 micron period grating was 84%, almost twice that of an uncompensated grating.
We report on direct-writing EBL manufactured, proximity compensated blazed transmission gratings. The proximity compensation is made using a non-linear iterative process in the spatial domain. The diffraction efficiency for a compensated 8 micron period grating was 84%, almost twice that of an uncompensated grating.
Laser micromachining with ten level resist kinoforms, manufactured by electron-beam lithography, is presented. The kinoforms were shown to have a diffraction efficiency of 68%. One kinoform was used to drill nine diffraction-limited holes simultaneously in a 0.10 mm thick stainless-steel plate. Marking in a silicon wafer was also done.
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