Photonic wire bonds have been developed as an interface for the collection of single photon emission from quantum dots within a Bragg waveguide. When resonantly excited from the top of the waveguide via free space excitation a low multiphoton contribution in the quantum dot emission with g(2)(0) = (9.5 ± 1.4) × 10−2 is shown. Our measurements demonstrate the ability to collect single-photon emission from a ridge waveguide into an optical fiber via photonic wire bonds at cryogenic temperatures. This allows for a seamless plug-and-play operation of the fiber-coupled single-photon source. Furthermore, the demonstrated approach allows for resonance fluorescence excitation without the need for any additional cross-polarization filtering.
In this paper, we demonstrate near-C-band semiconductor optical amplifiers (SOAs) integrated on silicon photonic chips using photonic wire bonds (PWBs). PWBs are three-dimensional, nano-printed, freeform, polymer waveguides which provide efficient coupling between optical components. The SOAs used in this work were 975μm long and 400μm wide, with a 1.54μm wide, 1.9μm thick active region. Measurements on a connectorized SOA are presented, showing a peak on-chip gain of 10.6dB at 1510nm when applying a 150mA bias current to it (here we have not calibrated out the coupling losses at the two SOI-waveguide/PWB interfaces nor have we calibrated out the losses at the two PWB/SOA interfaces, indicating that the gain of the SOA is significantly higher than the measured 10.6dB). The PWB connectorized SOA has a wavelength-dependent gain which was measured from 1480nm to 1555nm, the peak gain being obtained at 1510nm. In addition, the gain depends on the bias current applied, increasing with higher bias currents but saturating when the bias current exceeds 150mA. The PWB-connectorized SOA is also sensitive to the power of the input signal, the gain was larger for lower input powers (i.e., for powers below about -4.9dBm). Varying the polarization state of the input to our PWB-connectorized SOA changed the measured gain by 5.85dB.
Biosensors using silicon photonics (SiP) technology have shown great promise, including the potential to bring the accurate, data-rich diagnostics of lab-grade assays to the point-of-need. In this presentation, we will discuss our work to address three key challenges of SiP biosensors. First, we are tuning the photonic design to meet important performance criteria. Next, we review techniques to functionalize SiP devices, and present our integration of microfluidics with the millimeter-scale sensor chips. Finally, we are using electronic-photonic integration to mitigate a key challenge for point-of-need SiP sensors: the cost and size of the readout system.
We recently proposed a quantum computing platform that exploits circuit-bound photons to create cluster states and achieve one-way measurement-based quantum computations on arrays of photonically interfaced solid-state spin qubits with long coherence-times. Single photons are used for spin initialization, readout and for photon-mediated long-range entanglement creation. In this conference talk, we elaborate on the challenges that are faced during any practical implementation of this architecture by breaking it down into the key physical building blocks. We further discuss the constraints imposed on the spin qubits and the photonic circuit components that are set by the requirements of achieving fault-tolerant performance.
Commercial silicon photonic (SiP) biosensor architectures rely on expensive swept-tunable lasers that limit their use for widespread, point-of-care applications. An alternative is the use of fixed wavelength lasers integrated directly on a silicon photonic platform. This study investigates the design considerations of such architectures.
The goal of SiEPICfab is to conduct research in the fabrication of silicon photonic devices and photonic integrated circuits, and to make leading-edge silicon photonic manufacturing accessible to Canadian and international academics and industry. SiEPICfab builds on the success of the Silicon Electronic Photonic Integrated Circuits (SiEPIC) program, which has been offering research training workshops since 2008, by adding a fabrication facility “fab”. We have developed a rapid prototyping facility to support a complete ecosystem of companies involved in silicon photonics product development, including modelling, design, library development, fabrication, test, and packaging of silicon photonics. SiEPICfab allows designers to rapidly complete design-fabricate-test cycles, with technologies such as sub-wavelength sensors, PN junction ring modulators, silicon defect-based detectors, single photon detectors, single photon sources, and photonic wire bond integration of lasers and optical fibres.
Quantum networks enable a broad range of practical and fundamental applications. Experimental realization of such networks is hampered by many challenges, one of them being a lack of an efficient interface between stationary and flying qubits working at room temperature. We demonstrate an interface between ensembles of the nitrogen-vacancy centers in diamond and photons with wavelengths near 1550 nm. Photons are coupled to spins via local dynamical stress produced by optomechanical driving of a diamond microdisk. Our approach does not involve intrinsic optical transitions and can be easily adapted to many other colour centers.
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