Mr. Matthew L. Moynihan Profile

Matthew L. Moynihan

Program Manager at Rohm and Haas Electronic Materials, LLC

SPIE Involvement:

Author

Proceedings Article | 12 February 2009 Paper

Flexible optical interconnects based on silicon-containing polymers

Ed Anzures, Roger Dangel, Rene Beyeler, Allie Cannon, Folkert Horst, Cecilia Kiarie, Phil Knudsen, Norbert Meier, Matt Moynihan, Bert Jan Offrein

Proceedings Volume 7221, 72210I (2009) https://doi.org/10.1117/12.808396

KEYWORDS: Waveguides, Silicon, Polymers, Coating, Reliability, Optical interconnects, Wave propagation, Nitrogen, Optics manufacturing, Photomasks

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Proceedings Article | 11 March 2005 Paper

Progress toward board-level optical interconnect technology

Matthew Moynihan, Bruno Sicard, Tuan Ho, Luke Little, Nick Pugliano, James Shelnut, Hai Bin Zheng, Phil Knudsen, Dan Lundy, Nancy Chiarotto, Curtis Lustig, Craig Allen

Proceedings Volume 5731, (2005) https://doi.org/10.1117/12.594675

KEYWORDS: Waveguides, Silicon, Optical interconnects, Copper, Signal attenuation, Polymers, Optics manufacturing, Reliability, Epoxies, Lithography

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Proceedings Article | 10 June 2004 Paper

Progress toward the development of manufacturable integrated optical data buses

Nick Pugliano, Nancy Chiarroto, John Fisher, Noel Heiks, Tuan Ho, Garo Khanarian, Matthew Moynihan, Nathan Pawlowski, Jim Shelnut, David Sherrer, Bruno Sicard, Hai-Bin Zheng

Proceedings Volume 5358, (2004) https://doi.org/10.1117/12.526879

KEYWORDS: Waveguides, Optics manufacturing, Polymers, Integrated optics, Manufacturing, Plating, Connectors, Silicon, Metals, Data integration

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Proceedings Article | 10 November 2003 Paper

Recent developments in high-(Delta)N waveguides

Garo Khanarian, Yujian You, R. Gore, M. Talley, S. Ibbitson, A. Lamola, M. Gallagher, Bruno Sicard, Matthew Moynihan, James Shelnut

Proceedings Volume 5212, (2003) https://doi.org/10.1117/12.514841

KEYWORDS: Waveguides, Refractive index, Scattering, Cladding, Rayleigh scattering, Light scattering, Particles, Interfaces, Silicon, Semiconducting wafers

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Proceedings Article | 10 November 2003 Paper

Hybrid inorganic-organic aqueous base compatible waveguide materials for optical interconnect applications

Matthew Moynihan, Craig Allen, Tuan Ho, Luke Little, Nathan Pawlowski, Nick Pugliano, James Shelnut, Bruno Sicard, Hai Bin Zheng, Garo Khanarian

Proceedings Volume 5212, (2003) https://doi.org/10.1117/12.508142

KEYWORDS: Waveguides, Silicon, Optical interconnects, Lithography, Planar waveguides, Refractive index, Polymers, Scattering, Thermography, Birefringence

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Proceedings Article | 29 June 1998 Paper

Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates

Lori Joesten, Matthew Moynihan, Tracy Lindsay, Michael Reilly, Kathy Konjuh, David Mordo, Kenneth MacWilliams, Srini Sundararajan

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312354

KEYWORDS: Reflectivity, Photoresist materials, Deep ultraviolet, Nitrous oxide, Plasma treatment, Reflection, Critical dimension metrology, Oxides, Plasma, Interfaces

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Proceedings Article | 7 July 1997 Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William Brunsvold, Fred Buehrer, Ronald DellaGuardia, David Dobuzinsky, Timothy Farrell, Hok Ho, Ahmad Katnani, Robin Keller, James Marsh, Paul Muller, Ronald Nunes, Hung Ng, James Oberschmidt, Michael Pike, Deborah Ryan, Tina Cotler-Wagner, Ron Schulz, Hiroshi Ito, Donald Hofer, Gregory Breyta, Debra Fenzel-Alexander, Gregory Wallraff, Juliann Opitz, James Thackeray, George Barclay, James Cameron, Tracy Lindsay, Michael Cronin, Matthew Moynihan, Sassan Nour, Jacque Georger, Mike Mori, Peter Hagerty, Roger Sinta, Thomas Zydowsky

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275830

KEYWORDS: Semiconducting wafers, Photoresist materials, Etching, Polymers, Resistance, Lithography, Silicon, Glasses, Annealing, Photoresist processing

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Proceedings Article | 7 July 1997 Paper

Process techniques for improving post-exposure delay stability in chemically amplified resists

Sassan Nour, Edward Pavelchek, Tracy Lindsay, Matthew Moynihan, Lori Gambin

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275815

KEYWORDS: Silicon, Chemically amplified resists, Reflectivity, Diffusion, Antireflective coatings, Semiconducting wafers, Deep ultraviolet, Contamination, Temperature metrology, Critical dimension metrology

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Proceedings Article | 9 June 1995 Paper

Utilizing contrast enhancement material as a topside antireflective coating (TARC) for maximizing an i-line 0.35-um process window

Matthew Moynihan, Mark Markowski

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210392

KEYWORDS: Error analysis, Lithography, Critical dimension metrology, Antireflective coatings, Refractive index, Destructive interference, Photoresist processing, Silicon, Einsteinium, Semiconducting wafers

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As critical dimensions become smaller, a greater demand is being placed on existing i-line lithographic capability to support 0.35 micrometers technology. One method that is gaining wider acceptance is the use of a top side anti reflective coating (TARC). The effect of the TARC is to reduce the interference effects occurring in the film stack so that critical dimension (CD) variation as a result of topography is minimized. Unfortunately, the TARC provides no improvement with other lithographic responses that define the process window of a resist. Another approach is to use a contrast enhancement material (CEM). It is well known that a CEM can improve the depth of focus and resolution of a given resist system, and it is suspected that it may also possess some of the interference reduction properties of conventional TARCs. The purpose of this work is to investigate how effective the CEM acts as a TARC, and to determine any additional lithographic improvements which will increase the overall 0.35 micrometers process window. Process optimization of the CEM and TARC revealed that similar processing schemes could be used for both materials, but that it was necessary to remove the CEM (w/ a water rinse) prior to post exposure bake (PEB). The bulk photospeed swing ratio of the SPR3000 alone, was compared to SPR3000/Aquatar and SPR3000/CEM. Results showed that the Aquatar reduced the Eo swing ratio by 75%, while the CEM reduced the Eo swing ratio by about 55%. Similar improvements were seen with 0.35 micrometers CD swing ratio data. Exposure latitude and focus latitude (0.35 micrometers lines/spaces) data was generated using the same resist/enhancement schemes mentioned above at thicknesses corresponding to an Emax and Emin. Results of the lithography at each thickness were overlaid to determine the process window. Results showed the Aquatar and CEM processes to provide improved 0.35 micrometers windows, and that using a contrast enhancement material as a TARC is another alternative which can be used to increase the capability of commercially available i-line resists.

Showing 5 of 9 publications

Conference Committee Involvement (1)

Photonics Packaging and Integration VII

27 January 2005 | San Jose, California, United States

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