We present a universal model of broadband absorption in a slab of semiconductor. The theoretical framework, based on the description of multiple overlapping resonances in the frequency domain, has a very broad domain of validity. We derive simple analytical formulas for reference light-trapping models and for absorption upper bounds. Two light-trapping strategies are compared: multi-resonant absorption achieved with a sub-wavelength periodical pattern, and isotropic scattering obtained with random texturing. We provide an answer to the long-debated question of the best strategy for light-trapping in solar cells, and guidelines for the design of ultrathin solar cells. They apply to both silicon and thin-film solar cells. The new upper bounds on absorption presented in this work could be used to revisit the maximum efficiency of single-junction silicon solar cells.
Perovskite solar cells are one of the most actively studied next-generation solar cells. This is mainly because high power conversion efficiencies can be achieved even with simple solution-based fabrication processes. In addition, wide bandgap perovskite solar cells can be used as top sub-cells in multi-junction solar cells due to their easily tunable bandgap properties. On the other hand, colloidal quantum dots (CQDs), whose band gap depends on the quantum dot size, are one of the few options that are compatible with solution processes and can be employed as lower sub-cells. Here, we show the potential of both types for the construction of multi-junction solar cells. To this end, we constructed a wide bandgap perovskite solar cell that is ideal for monolithic 2-junction perovskite/GaAs solar cells. We also developed a colloidal quantum dot solar cell with infrared absorbing PbS CQDs and constructed a spectral splitting multi-junction solar cell as a proof of concept.
KEYWORDS: Thermodynamics, Electroluminescence, Fluctuations and noise, Solar cells, Black bodies, Reflection, Solar energy, Radiative energy transfer, Photovoltaics, Photonic integrated circuits
Comparing the performance of thermophotovoltaic (TPV) devices is challenging due to a lack of standard operation conditions. Here, we propose a universal figure of merit (FOM) that can be used to evaluate the performance of TPV devices that operate in the far-field regime relative to their thermodynamic bounds. The introduced FOM alleviates temperature dependence and accounts for the fundamental trade-off between power density and efficiency. Based on this FOM, we present a classification of TPV performances reported in recent experiments.
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