We present principle of defect characterization of GaN using multiphoton-excitation photoluminescence and several experimental results. Threading dislocations and basal plane dislocations in n-type GaN are observed from near-band-edge emission imaging. The diameters of dark spots and dark lines are determined by the minority carrier diffusion length. Three-dimensional feature of dark lines is different by the Burgers vectors of dislocations. Based on these properties, nondestructive classification of dislocations is possible. Simultaneous detection of near-band-edge emission and yellow luminescence can be utilized to visualize three-dimensional growth processes such as facet-initiated epitaxial lateral overgrowth, which is used to obtain GaN substrates with low threading dislocation densities.
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