We consider a transverse electrical and spin current response to a longitudinal electric field in a metallic or semiconductor system characterized by various types of chirality. Using the similar theoretical approach we study a skew scattering on magnetic skyrmions leading to topological Hall effect, tunneling anomalous Hall effect (TAHE) of electrons and holes across an interface between magnetic semiconductors and electron scattering on a magnetic center in a semiconductor. We demonstrate how the chiral symmetry of the system manifests itself in the Hall response and its dependence on the electron spin polarization.
In this work we argue that the electron skew scattering on paramagnetic impurities in non-magnetic semiconductors possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and itinerant carriers leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, and propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device, which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization-independent terms in the Hall voltage.
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