Dr. Myoung Soo Kim Profile

Dr. Myoung Soo Kim

Senior Technical Staff at SK Hynix Inc

SPIE Involvement:

Author

Publications (34)

Proceedings Article | 18 March 2016 Paper

Paper

Device overlay method for high volume manufacturing

Honggoo Lee, Sangjun Han, Youngsik Kim, Myoungsoo Kim, Hoyoung Heo, Sanghuck Jeon, DongSub Choi, Jeremy Nabeth, Irina Brinster, Bill Pierson, John Robinson

Proceedings Volume 9778, 97781F (2016) https://doi.org/10.1117/12.2219701

KEYWORDS: Overlay metrology, Scanning electron microscopy, Metrology, Inspection, High volume manufacturing, Image processing, Process control, Optical lithography, Control systems, Optical metrology, Semiconducting wafers, Data modeling, Transparency

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Proceedings Article | 8 March 2016 Paper

Paper

In-depth analysis of sampling optimization methods

Honggoo Lee, Sangjun Han, Myoungsoo Kim, Boris Habets, Stefan Buhl, Steffen Guhlemann, Martin Rößiger, Enrico Bellmann, Seop Kim

Proceedings Volume 9778, 97781E (2016) https://doi.org/10.1117/12.2219037

KEYWORDS: Optical alignment, Overlay metrology, Semiconducting wafers, Optimization (mathematics), Data modeling, Image processing, Process control, Lithography, Statistical modeling, High volume manufacturing, Performance modeling, Computer simulations, Semiconductors

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Proceedings Article | 19 March 2015 Paper

Paper

Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

Honggoo Lee, Jongsu Lee, Sang Min Kim, Changhwan Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sung-Ki Park, Pradeep Vukkadala, Amartya Awasthi, J. Kim, Sathish Veeraraghavan, DongSub Choi, Kevin Huang, Prasanna Dighe, Cheouljung Lee, Jungho Byeon, Soham Dey, Jaydeep Sinha

Proceedings Volume 9424, 94240M (2015) https://doi.org/10.1117/12.2085862

KEYWORDS: Semiconducting wafers, Overlay metrology, Lithography, Scanners, Distortion, Plasma enhanced chemical vapor deposition, Semiconductors, Process control, Manufacturing, Error analysis

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Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes – which is directly related to stresses induced by wafer processing. In multiple instances it was possible to adjust process parameters such as gas flow rate, machine power, etc., and reduce non-uniform stresses in the wafer. Estimates of process-induced overlay errors were also used to perform feedforward overlay corrections for 3D-NAND production wafers. Results from the studies performed in an advanced semiconductor fabrication line are reported in this paper.

Proceedings Article | 19 March 2015 Paper

Paper

Improvement of depth of focus control using wafer geometry

Honggoo Lee, Jongsu Lee, Sangmin Kim, Changhwan Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sung-Ki Park, Sathish Veeraraghavan, JH Kim, Amartya Awasthi, Jungho Byeon, Dieter Mueller, Jaydeep Sinha

Proceedings Volume 9424, 942428 (2015) https://doi.org/10.1117/12.2085848

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Scanners, Lithography, Chemical mechanical planarization, Optical lithography, Semiconductors, Etching, Neodymium

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Proceedings Article | 19 March 2015 Paper

Paper

Virtual overlay metrology for fault detection supported with integrated metrology and machine learning

Hong-Goo Lee, Emil Schmitt-Weaver, Min-Suk Kim, Sang-Jun Han, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Kevin Ryan, Thomas Theeuwes, Kyu-Tae Sun, Young-Wan Lim, Daan Slotboom, Michael Kubis, Jens Staecker

Proceedings Volume 9424, 94241T (2015) https://doi.org/10.1117/12.2085475

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Wafer testing, Machine learning, Neural networks, Data modeling, Optical alignment, Scanners, Process engineering

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Proceedings Article | 19 March 2015 Paper

Paper

Overlay measurement accuracy enhancement by design and algorithm

Honggoo Lee, Byongseog Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sungki Park, DongSub Choi, Dohwa Lee, Sanghuck Jeon, Kangsan Lee, Tal Itzkovich, Nuriel Amir, Roie Volkovich, Eitan Herzel, Mark Wagner, Mohamed El Kodadi

Proceedings Volume 9424, 94242B (2015) https://doi.org/10.1117/12.2085272

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Signal processing, Process control, Quality measurement, Lithography, Double patterning technology, Photomasks, Uncertainty analysis

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Proceedings Article | 19 March 2015 Paper

Paper

Overlay accuracy investigation for advanced memory device

Honggoo Lee, Byongseog Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sungki Park, DongSub Choi, Dohwa Lee, Sanghuck Jeon, Kangsan Lee, Roie Volkovich, Tal Itzkovich, Eitan Herzel, Mark Wagner, Mohamed Elkodadi

Proceedings Volume 9424, 94240C (2015) https://doi.org/10.1117/12.2085270

KEYWORDS: Overlay metrology, Metrology, Quality measurement, Signal processing, Image quality, Lithography, Target detection, Semiconducting wafers, Sensors, Etching

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Proceedings Article | 17 April 2014 Paper

Paper

EUV overlay strategy for improving MMO

Byoung-Hoon Lee, Inhwan Lee, Yoonsuk Hyun, SeoMin Kim, Chang-Moon Lim, Myoung Soo Kim, Sung-ki Park

Proceedings Volume 9048, 90480R (2014) https://doi.org/10.1117/12.2048283

KEYWORDS: Extreme ultraviolet, Photomasks, Semiconducting wafers, Overlay metrology, Extreme ultraviolet lithography, EUV optics, Manufacturing, Lithography, Reflectivity, Interferometers

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Proceedings Article | 17 April 2014 Paper

Paper

EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

Seo Min Kim, Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, Myoungsoo Kim, Chang-Nam Ahn, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9048, 90480A (2014) https://doi.org/10.1117/12.2048282

KEYWORDS: Etching, Liquid phase epitaxy, Stochastic processes, Photomasks, Metrology, Critical dimension metrology, Printing, Scanning electron microscopy, Extreme ultraviolet, Error analysis

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Proceedings Article | 2 April 2014 Paper

Paper

Investigation on reticle heating effect induced overlay error

Mijung Lim, Geunhak Kim, SeoMin Kim, Byounghoon Lee, Seokkyun Kim, Chang-moon Lim, Myoungsoo Kim, Sungki Park

Proceedings Volume 9050, 905014 (2014) https://doi.org/10.1117/12.2048281

KEYWORDS: Reticles, Semiconducting wafers, Transmittance, Overlay metrology, Photomasks, Optical parametric oscillators, Scanners, Semiconductors, HVAC controls, Distortion

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Proceedings Article | 2 April 2014 Paper

Paper

CD uniformity optimization at volume ramp up stage for new product introduction

Jin-Soo Kim, Won-Kwang Ma, Young-Sik Kim, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Peter Nikolsky, Marian Otter, Maryana Escalante Marun, Roy Anunciado, Kyu-Tae Sun, Greet Storms, Ewould van West

Proceedings Volume 9050, 905037 (2014) https://doi.org/10.1117/12.2057390

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Yield improvement, Semiconductors, Etching, Photoresist processing, Optical lithography, Process control, Overlay metrology, Manufacturing

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Proceedings Article | 1 April 2013 Paper

Paper

EUV mask defect analysis from mask to wafer printing

Yoonsuk Hyun, Kangjoon Seo, Kyuyoung Kim, Inhwan Lee, Byounghoon Lee, Sunyoung Koo, Jongsu Lee, Sukkyun Kim, Seomin Kim, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8679, 86790G (2013) https://doi.org/10.1117/12.2010091

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Extreme ultraviolet, Wafer inspection, Scanners, Reticles, Extreme ultraviolet lithography, Defect inspection

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Proceedings Article | 3 April 2012 Paper

Paper

A scatterometry-based CD uniformity control solution for Spacer Patterning Technology

Jongsu Lee, Chang Moon Lim, Chan-Ho Ryu, Myoungsoo Kim, Hyosang Kang, Hugo Cramer, Noelle Wright, Birgitt Hepp, Liesbeth van Reijnen, Hans van der Laan, Maryana Marun, Peter ten Berge

Proceedings Volume 8324, 83241V (2012) https://doi.org/10.1117/12.917824

KEYWORDS: Critical dimension metrology, Optical lithography, Double patterning technology, Deposition processes, Scatterometry, Semiconducting wafers, Process control, Etching, Metrology, Control systems

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Proceedings Article | 23 March 2012 Paper

Paper

Study on CD variation in the vicinity of the exposure field edge in EUV lithography

Chang-Moon Lim, Seokkyun Kim, Jun-Taek Park, Yoonsuk Hyun, Jong-Su Lee, Sunyoung Koo, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8322, 83221O (2012) https://doi.org/10.1117/12.916108

KEYWORDS: Critical dimension metrology, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical proximity correction, Scanners, Deep ultraviolet, EUV optics, Semiconductors, Reticles

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Proceedings Article | 23 March 2012 Paper

Paper

Comparison study for 3x-nm contact hole CD uniformity between EUV lithography and ArF immersion double patterning

Keundo Ban, Junggun Heo, Hyunkyung Shim, Minkyung Park, Kilyoung Lee, Sunyoung Koo, Jaeheon Kim, Cheolkyu Bok, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8322, 83221A (2012) https://doi.org/10.1117/12.916119

KEYWORDS: Double patterning technology, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Line width roughness, Photomasks, Optical lithography, Etching, Metrology, Edge roughness

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Proceedings Article | 2 April 2010 Paper

Paper

Mask registration and wafer overlay

Chulseung Lee, Changjin Bang, Myoungsoo Kim, Hyosang Kang, Dohwa Lee, Woonjae Jeong, Ok-Sung Lim, Seunghoon Yoon, Jaekang Jung, Frank Laske, Lidia Parisoli, Klaus-Dieter Roeth, John Robinson, Sven Jug, Pavel Izikson, Berta Dinu, Amir Widmann, DongSub Choi

Proceedings Volume 7638, 76382I (2010) https://doi.org/10.1117/12.846321

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Scanners, Pellicles, Metrology, Image registration, Distance measurement, Distortion, Double patterning technology

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Proceedings Article | 24 March 2009 Paper

Paper

The study and simulation of high-order overlay control including field-by-field methodologies

Dongsub Choi, Chulseung Lee, Changjin Bang, Myoungsoo Kim, Hyosang Kang, James Manka, Seunghoon Yoon, Dohwa Lee, John Robinson

Proceedings Volume 7272, 727230 (2009) https://doi.org/10.1117/12.812935

KEYWORDS: Scanners, Semiconducting wafers, Overlay metrology, Data modeling, Semiconductors, Optical lithography, Optical alignment, Lithium, Control systems, Semiconductor manufacturing

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Proceedings Article | 26 March 2008 Paper

Paper

The study of defect control and patterning performance for top coating free resist process

Myoung-Soo Kim, Hun-Rok Jung, Hae-Wook Ryu, Hong-Goo Lee, Sung-Mok Hong, Hak-Joon Kim, Sung-Nam Park, Myung-Goon Gil, Hyo-Sang Kang

Proceedings Volume 6923, 69231T (2008) https://doi.org/10.1117/12.772471

KEYWORDS: Photoresist processing, Coating, Optical lithography, Scanners, Contamination, Semiconducting wafers, Materials processing, Industrial chemicals, Line edge roughness, Semiconductors

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Proceedings Article | 21 March 2007 Paper

Paper

New ArF resist introduction for process through-put enhancement

Myoung Soo Kim, Hae-Wook Ryu, Hong-Goo Lee, Hak-Joon Kim, Kew-Chan Shim, Myung-Goon Gil, Hyo-Sang Kang

Proceedings Volume 6519, 65193G (2007) https://doi.org/10.1117/12.711022

KEYWORDS: Line edge roughness, Optical lithography, Photoresist processing, Instrument modeling, Reliability, Semiconducting wafers, Industrial chemicals, Semiconductors, Scanning electron microscopy, Aerospace engineering

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Proceedings Article | 29 March 2006 Paper

Paper

The suppression method of powder formation in ArF photoresist

Geunsu Lee, Heesung Kim, Eungsok Lee, Myoungsoo Kim, Samyoung Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61533F (2006) https://doi.org/10.1117/12.656860

KEYWORDS: Photoresist materials, Polymers, Coating, Semiconducting wafers, Particles, Scanners, Photoresist processing, Lithography, Line edge roughness, Manufacturing

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Proceedings Article | 29 March 2006 Paper

Paper

Implantation blocking characteristics study of organic BARC materials

Myoung-Soo Kim, Jae-Wook Seo, Kew-Chan Shim, Seung-Woo Jin, Hak-Joon Kim, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 6153, 61532N (2006) https://doi.org/10.1117/12.657317

KEYWORDS: Etching, Coating, Semiconducting wafers, Boron, Chemical analysis, Chromophores, Reflectivity, Silicon, Control systems, Ions

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Proceedings Article | 4 May 2005 Paper

Paper

Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device

MyoungSoo Kim, HakJoon Kim, KewChan Shim, JeHa Jeon, MyungGoon Gil, YongWook Song, Tomoyuki Enomoto, Takahiro Sakaguchi, Yasuyuki Nakajima

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599434

KEYWORDS: Reflectivity, Photoresist materials, Silicon, Etching, Semiconducting wafers, Coating, Oxides, Thin films, Plasma etching, Semiconductors

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Proceedings Article | 14 May 2004 Paper

Paper

Application of new thin BARC technology for KrF lithography at 80-nm node device

Myoung-Soo Kim, Kew-Chan Shim, Hak-Joon Kim, Ki-Sung Kwon, Hong-Goo Lee, Chul-Seung Lee, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536159

KEYWORDS: Silicon, Optical lithography, Reflectivity, Oxides, Lithography, Coating, Photoresist processing, Semiconducting wafers, Semiconductors, Line edge roughness

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Proceedings Article | 12 June 2003 Paper

Paper

Diffusion parameter analysis for chemical amplification resists as a function of resist process

Myoung-Soo Kim, Seung-Weon Paek, Dae-Sub Kwak, Hak-Joon Kim, Chul-Seung Lee, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485065

KEYWORDS: Diffusion, Chemical analysis, Photoresist processing, Coating, Photomasks, Lithography, Calibration, Cadmium, Semiconducting wafers, Phase shifts

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Proceedings Article | 12 June 2003 Paper

Paper

Characterization of resist flow process for the improvement of contact hole CD uniformity

Cha-Won Koh, Dong-Ho Lee, Myoung-Soo Kim, Sung-Nam Park, Won-Taik Kwon

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485110

KEYWORDS: Semiconducting wafers, Photoresist processing, Resistance, Critical dimension metrology, Lithography, Temperature metrology, Silicon, Optical resolution, Optical lithography, Chemically amplified resists

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Proceedings Article | 24 July 2002 Paper

Paper

Reflow process stabilization by chemical characteristics and process conditions

Myoung-Soo Kim, Jeong-Hyun Park, Hak-Joon Kim, Il-Hyung Kim, Jae-Ha Jeon, Myung-Goon Gil, Bong-Ho Kim

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474277

KEYWORDS: Photoresist processing, Etching, Optical lithography, Coating, Chemical reactions, Industrial chemicals, Electroluminescence, Semiconducting wafers, Oxides, Reliability

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Proceedings Article | 16 July 2002 Paper

Paper

Improved characteristics of rainbow defects with novel wafer edge exposure technique

Kew-Chan Shim, Myoung-Soo Kim, Eung-Sok Lee, Chang-Seong Lee, Chul-Seung Lee, Myung-Goon Gil, Bong-Ho Kim, Jae-Sig In, Tae Bong Yoon, Jai-soon Kim

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473420

KEYWORDS: Semiconducting wafers, Photoresist processing, Ultraviolet radiation, Wafer-level optics, Scanning electron microscopy, Silicon, Particles, Lithography, Coating, Etching

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Proceedings Article | 24 August 2001 Paper

Paper

Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process

Cha-Won Koh, Jae Chang Jung, Myoung-Soo Kim, Keun-Kyu Kong, Geunsu Lee, Min-Ho Jung, Jin-Soo Kim, Ki-Soo Shin

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436911

KEYWORDS: Lithography, Photoresist processing, Image processing, 193nm lithography, Etching, Photoresist materials, Photoresist developing, Line edge roughness, Resistance, Electron beam lithography

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Proceedings Article | 24 August 2001 Paper

Paper

Investigation of electron beam stabilization of 193-nm photoresists

Myoung-Soo Kim, Jong-Woon Park, Hak-Joon Kim, Bum-Jin Jun, Myung-Goon Gil, Bong-Ho Kim, Matthew Ross, William Livesay

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436905

KEYWORDS: Etching, Electron beams, Photoresist processing, Surface roughness, Refraction, 193nm lithography, Scanning electron microscopy, Monochromatic aberrations, Lithography, Photoresist materials

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193nm lithography is a promising candidate for the fabrication of microelectronic devices at the 130nm design rule and below. With smaller feature sizes, below 130nm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning. At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin- maleic-anhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition. Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross- sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a KrF resist currently used in production. Based on the experimental results, the electron beam process provides a method for improving etch selectivity and reducing line slimming issues of ArF resists.

Proceedings Article | 23 June 2000 Paper

Paper

Characteristic study of electron beam stabilization for deep-UV photoresists

Myoung-Soo Kim, Jae-Hak Choi, Chi Rho, Min-Jong Hong, Bum-Jin Jun, Myung-Goon Gil, Bong-Ho Kim, Dong-Jun Ahn, Matthew Ross, Selmer Wong

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388365

KEYWORDS: Electron beams, Etching, Deep ultraviolet, Photoresist processing, Photoresist materials, Refraction, Semiconducting wafers, Metals, FT-IR spectroscopy, Chemical analysis

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Proceedings Article | 11 June 1999 Paper

Paper

Electrical property study of line-edge roughness in top surface imaging process by silylation

Myoung-Soo Kim, Hyoung-Gi Kim, Seung Ho Pyi, Hyeong-Soo Kim, Ki-Ho Baik, Il-Hyun Choi

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350197

KEYWORDS: Line edge roughness, Transistors, Molybdenum, Etching, Critical dimension metrology, Photoresist processing, Optical lithography, Silica, Lithography, Silicon

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Proceedings Article | 11 June 1999 Paper

Paper

Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects

Myoung-Soo Kim, Hyoung-Gi Kim, Hyeong-Soo Kim, Ki-Ho Baik, Donald Johnson, George Cernigliaro, David Minsek

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350277

KEYWORDS: Polymers, Photoresist materials, Etching, Lithography, Line edge roughness, Reactive ion etching, Image processing, Scanning electron microscopy, Photomicroscopy, Thin films

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Proceedings Article | 29 June 1998 Paper

Paper

Tailoring of isolation structures with top-surface imaging process by silylation

Hyoung-Gi Kim, Myoung-Soo Kim, Cheol-Kyu Bok, Byung-Jun Park, Jin-Woong Kim, Ki-Ho Baik, Dai-Hoon Lee

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312458

KEYWORDS: Line edge roughness, Semiconducting wafers, Plasma, Photoresist processing, Gases, Image processing, Critical dimension metrology, Photoresist materials, Photomasks, Electroluminescence

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Proceedings Article | 7 July 1997 Paper

Paper

Effect of salt on the dissolution of novolac in base

Myoung-Soo Kim, Arnost Reiser

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275834

KEYWORDS: Ions, Diffusion, Potassium, Chlorine, Particles, Data modeling, Crystals, Molecules, Interfaces, Solids

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Showing 5 of 34 publications

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