Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report room-temperature optically detected magnetic resonance (ODMR) from previously identified carbon-related single defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast is up to 100x stronger than that of ensembles and displays a magnetic-field dependence with both positive or negative sign per defect. Further, the ODMR lineshape comprises a doublet resonance, indicating a S=1 state with low but finite zero-field splitting. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have emerged as robust sources of quantum light due to bright and high purity emission at room temperature. Progress in the fabrication, tuning, and integration of the emitters is discussed. Additionally, after years of debate over the structural origin of the emission, we present new experiments identifying the source of visible SPE emission in hBN, and the recent confirmation of spin selective transitions from multiple defect species.
Color centers in diamond—especially group IV defects—have been advanced as a viable solid-state platform for quantum photonics and information technologies. We investigate the photodynamics and characteristics of germanium-vacancy (GeV) centers hosted in high-pressure high-temperature diamond nanocrystals. Through back-focal plane imaging, we analyze the far-field radiation pattern of the investigated emitters and derive a crossed-dipole emission, which is strongly aligned along one axis. We use this information in combination with lifetime measurements to extract the decay rate statistics of the GeV emitters and determine their quantum efficiency, which we estimated to be ∼ ( 22 ± 2 ) % . Our results offer further insight into the photodynamic properties of the GeV center in nanodiamonds and confirm its suitability as a desirable system for quantum technologies.
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