Mr. Paul Gräupner Profile

Paul Gräupner

at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (57)

Proceedings Article | 13 November 2024 Presentation

Advancing EUV lithography optics supporting current roadmap and beyond

Olaf Conradi, Paul Gräupner, Peter Kuerz, Wolfgang Seitz, Jan van Schoot, Roel Moors

Proceedings Volume PC13215, PC1321503 (2024) https://doi.org/10.1117/12.3034698

KEYWORDS: Extreme ultraviolet lithography, EUV optics, Imaging systems, Scanners, Projection systems, Light sources and illumination, Extreme ultraviolet, Stray light, Pupil aberrations, Product engineering

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Proceedings Article | 10 April 2024 Presentation + Paper

The next step in Moore’s law: high-NA EUV introduction at the customer

J. Santaclara, Rudy Peeters, Rob van Ballegoij, Sjoerd Lok, Jan van Schoot, Paul Graeupner, Peter Kuerz, Joerg Mallmann, Greet Storms, Peter Vanoppen

Proceedings Volume 12953, 129530P (2024) https://doi.org/10.1117/12.3009070

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, System integration, Reticles, Image sensors, Optical proximity correction, Mirrors, Metrology, Lithography, Ecosystems

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Proceedings Article | 10 April 2024 Presentation + Paper

EUV optics at ZEISS: status, outlook, and future

Joachim Kalden, Jens Timo Neumann, Dirk Jürgens, Paul Gräupner, Wolfgang Seitz, Peter Kürz

Proceedings Volume 12953, 129530Q (2024) https://doi.org/10.1117/12.3010847

KEYWORDS: EUV optics, Mirrors, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Optics manufacturing, Geometrical optics, Projection systems, Optical transmission, Metrology

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Proceedings Article | 22 November 2023 Presentation

High-NA EUV platform realization as next step in EUV technology

Jara Garcia-Santaclara, Rudy Peeters, Jeroen van Dongen, Rob van Ballegoij, Sjoerd Lok, Jan van Schoot, Paul Graeupner, Peter Kuerz, Joerg Mallmann, Greet Stoorms, Peter Vanoppen

Proceedings Volume PC12750, PC1275002 (2023) https://doi.org/10.1117/12.2687756

KEYWORDS: Extreme ultraviolet, Yield improvement, Wafer-level optics, Semiconductors, Semiconducting wafers, Scanners, Reticles, Prototyping, Extreme ultraviolet lithography, Design and modelling

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Proceedings Article | 21 November 2023 Paper

Status and outlook of EUV optics at ZEISS

Jörg Zimmermann, Jens Timo Neumann, Dirk Jürgens, Paul Gräupner

Proceedings Volume 12750, 127500O (2023) https://doi.org/10.1117/12.2687658

KEYWORDS: Optics manufacturing, EUV optics, Scanners, Optical resolution, Imaging systems, High volume manufacturing, Projection systems, Mirrors, Metrology, Manufacturing

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Proceedings Article | 5 October 2023 Paper

Emergence of next generation EUV optics: status, outlook and future

Daniel Golde, Björn Butscher, Paul Gräupner, Peter Kürz, Dirk Jürgens, Olaf Conradi, Jan van Schoot, Judon Stoeldraijer

Proceedings Volume 12802, 1280202 (2023) https://doi.org/10.1117/12.2673952

KEYWORDS: Mirrors, Extreme ultraviolet, Design and modelling, Semiconducting wafers, Extreme ultraviolet lithography, EUV optics, Scanners, Reticles, Optics manufacturing, Manufacturing

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Proceedings Article | 30 April 2023 Presentation

High NA EUV optics: preparing the next major lithography step

Paul Graeupner, Daniel Golde, Jan van Schoot, Peter Kuerz, Judon Stoeldraijer

Proceedings Volume PC12494, PC1249405 (2023) https://doi.org/10.1117/12.2658370

KEYWORDS: EUV optics, Lithography, Extreme ultraviolet lithography, Mirrors, Surface finishing, Solids, Scanners, Polishing, Metrology, Extreme ultraviolet

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Proceedings Article | 1 December 2022 Presentation + Paper

EUV optics at ZEISS: status and outlook

Bartosz Bilski, Dirk Jürgens, Paul Gräupner

Proceedings Volume 12292, 1229204 (2022) https://doi.org/10.1117/12.2645875

KEYWORDS: Projection systems, Optics manufacturing, Lithography, Extreme ultraviolet, EUV optics, Extreme ultraviolet lithography

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Proceedings Article | 15 September 2022 Presentation

PMJ22: EUV lithography in high volume manufacturing

Christian Karlewski, Dirk Juergens, Paul Graeupner

Proceedings Volume 12325, 1232505 (2022) https://doi.org/10.1117/12.2640511

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Proceedings Article | 26 May 2022 Presentation + Paper

EUV optics: status, outlook and future

Paul Graeupner, Peter Kuerz, Thomas Stammler, Jan van Schoot, Judon Stoeldraijer

Proceedings Volume 12051, 1205102 (2022) https://doi.org/10.1117/12.2614778

KEYWORDS: Mirrors, EUV optics, Projection systems, Extreme ultraviolet, Photomasks, Optics manufacturing, Metrology, Lithography, Wavefronts

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SPIE Journal Paper | 21 April 2022

Extreme ultraviolet scanner with high numerical aperture: obscuration and wavefront description

Laurens de Winter, Timur Tudorovskiy, Jan van Schoot, Kars Troost, Erwin Stinstra, Stephen Hsu, Toralf Gruner, Juergen Mueller, Ruediger Mack, Bartosz Bilski, Joerg Zimmermann, Paul Graeupner

JM3, Vol. 21, Issue 02, 023801, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.023801

KEYWORDS: Wavefronts, Zernike polynomials, Scanners, Extreme ultraviolet, Spherical lenses, Monochromatic aberrations, Mirrors, Extreme ultraviolet lithography, Lithography, Sensors

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Proceedings Article | 28 September 2021 Presentation

High-NA EUV imaging: from system introduction towards low-k1 extension

Eelco van Setten, Jan Van Schoot, Anton van Oosten, Claire van Lare, Friso Wittebrood, Gijsbert Rispens, Gerardo Bottiglieri, John McNamara, Natalia Davydova, Jo Finders, Joerg Zimmermann, Bartosz Bilski, Paul Graeupner

Proceedings Volume 11854, 118540G (2021) https://doi.org/10.1117/12.2600965

KEYWORDS: Imaging systems, Extreme ultraviolet, Fiber optic illuminators, Transistors, Scanners, Optimization (mathematics), Mirrors, Metals, Extreme ultraviolet lithography

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Proceedings Article | 28 September 2021 Presentation

High NA EUV optics: preparing lithography for the next big step

Paul Graeupner, Peter Kuerz, Jan Van Schoot, Judon Stoeldraijer

Proceedings Volume 11854, 118540F (2021) https://doi.org/10.1117/12.2600962

KEYWORDS: EUV optics, Lithography, Optics manufacturing, Scanners, Mirrors, Wafer-level optics, Extreme ultraviolet lithography, Surface finishing, Silicon, Semiconductors

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Proceedings Article | 27 September 2021 Presentation

High-NA EUVL exposure tool: key advantages and program status

Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Thomas Stammler, Kars Troost

Proceedings Volume 11854, 1185403 (2021) https://doi.org/10.1117/12.2600951

KEYWORDS: Extreme ultraviolet lithography, Sensors, Scanners, Projection systems, Printing, Optical lithography, Mirrors, Lens design, High volume manufacturing, Device simulation

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Proceedings Article | 22 February 2021 Presentation

High-NA EUV lithography exposure tool: key advantages and program progress

Jan Van Schoot, Sjoerd Lok, Eelco Van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Thomas Stammler

Proceedings Volume 11609, 1160905 (2021) https://doi.org/10.1117/12.2583640

KEYWORDS: Extreme ultraviolet lithography, Sensors, Scanners, Projection systems, Printing, Optical lithography, Mirrors, Lens design, High volume manufacturing, Device simulation

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Proceedings Article | 7 January 2021 Presentation + Paper

High-NA EUV lithography exposure tool: advantages and program progress

Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser

Proceedings Volume 11517, 1151712 (2021) https://doi.org/10.1117/12.2572932

KEYWORDS: Extreme ultraviolet lithography, High volume manufacturing, Scanners, Lens design, Sensors, Printing, Optical lithography, Device simulation, Projection systems, Buildings

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Proceedings Article | 18 November 2020 Presentation + Paper

High NA EUV scanner: obscuration and wavefront description

Laurens de Winter, Timur Tudorovskiy, Jan van Schoot, Kars Troost, Erwin Stinstra, Stephen Hsu, Toralf Gruner, Juergen Mueller, Ruediger Mack, Bartosz Bilski, Joerg Zimmermann, Paul Graeupner

Proceedings Volume 11517, 1151715 (2020) https://doi.org/10.1117/12.2572878

KEYWORDS: Wavefronts, Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Transistors, Multilayers, Mirrors

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Proceedings Article | 23 March 2020 Paper

High-NA EUV lithography optics becomes reality

Lars Wischmeier, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Jan van Schoot, Joerg Mallmann, Joost de Pee, Judon Stoeldraijer

Proceedings Volume 11323, 1132308 (2020) https://doi.org/10.1117/12.2543308

KEYWORDS: Light sources and illumination, Lithographic illumination, Mirrors, Metrology, EUV optics, Projection systems, Optics manufacturing, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography

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Proceedings Article | 23 March 2020 Paper

High-NA EUV lithography exposure tool: program progress

Jan Van Schoot, Eelco van Setten, Kars Troost, Sjoerd Lok, Judon Stoeldraijer, Rudy Peeters, Jos Benschop, Joerg Zimmerman, Paul Graeupner, Lars Wischmeier, Peter Kuerz, Winfried Kaiser

Proceedings Volume 11323, 1132307 (2020) https://doi.org/10.1117/12.2551491

KEYWORDS: Photomasks, Line width roughness, Semiconducting wafers, Extreme ultraviolet lithography, Particles, Scanners, Extreme ultraviolet, Photoresist materials, Optics manufacturing, Stochastic processes

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Proceedings Article | 16 October 2019 Presentation

High-NA EUV Lithography exposure tool: program progress and mask impact (Conference Presentation)

Jan Van Schoot, Eelco van Setten, Kars Troost, Sjoerd Lok, Judon Stoeldraijer, Rudy Peeters, Jos Benschop, Joerg Zimmermann, Paul Graeupner, Peter Kuerz, Winfried Kaiser

Proceedings Volume 11147, 1114710 (2019) https://doi.org/10.1117/12.2538325

KEYWORDS: Extreme ultraviolet lithography, Photomasks, High volume manufacturing, Scanners, Lens design, Sensors, Thermography, Pellicles

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Proceedings Article | 16 October 2019 Presentation

Advancing EUV lithography optics (Conference Presentation)

Heiko Feldmann, Olaf Conradi, Paul Graeupner, Jan van Schoot, Peter Kuerz, Winfried Kaiser

Proceedings Volume 11147, 1114704 (2019) https://doi.org/10.1117/12.2538927

KEYWORDS: Extreme ultraviolet lithography, EUV optics, Scanners, Imaging systems, Projection systems, Lithographic illumination, Optical design, Double patterning technology, Extreme ultraviolet, Mirrors

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Proceedings Article | 29 August 2019 Paper

High-NA EUV lithography: pushing the limits

C. Zahlten, P. Gräupner, J. van Schoot, P. Kürz, J. Stoeldraijer, W. Kaiser

Proceedings Volume 11177, 111770B (2019) https://doi.org/10.1117/12.2536469

KEYWORDS: Mirrors, Extreme ultraviolet, Metrology, Semiconducting wafers, Imaging systems, Extreme ultraviolet lithography, Photomasks, Control systems, Scanners, Lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

High NA EUV lithography: Next step in EUV imaging

Eelco van Setten, Gerardo Bottiglieri, John McNamara, Jan van Schoot, Kars Troost, Joseph Zekry, Timon Fliervoet, Stephen Hsu, Joerg Zimmermann, Matthias Roesch, Bartosz Bilski, Paul Graeupner

Proceedings Volume 10957, 1095709 (2019) https://doi.org/10.1117/12.2514952

KEYWORDS: Source mask optimization, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Photomasks, Diffraction

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Proceedings Article | 14 March 2019 Presentation

High-NA EUV lithography exposure tool progress

Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Paul Graeupner, Joerg Zimmermann, Peter Kuerz, Marco Pieters, Winfried Kaiser

Proceedings Volume 10957, 1095707 (2019) https://doi.org/10.1117/12.2515205

KEYWORDS: Extreme ultraviolet lithography, High volume manufacturing, Scanners, Lens design, Sensors, Polarization, Polarization control

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Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography: The next step in EUV imaging (Conference Presentation)

Eelco van Setten, John McNamara, Jan van Schoot, Gerardo Bottiglieri, Kars Troost, Timon Fliervoet, Stephen Hsu, Jörg Zimmermann, Jens-Timo Neumann, Matthias Rösch, Paul Graeupner

Proceedings Volume 10809, 1080910 (2018) https://doi.org/10.1117/12.2502149

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Fiber optic illuminators, Transistors, Photomasks, Mirrors, Image resolution

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Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography exposure tool progress (Conference Presentation)

Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Erik Loopstra, Bernhard Kneer, Sascha Migura

Proceedings Volume 10809, 108090Z (2018) https://doi.org/10.1117/12.2502894

KEYWORDS: Extreme ultraviolet lithography, High volume manufacturing, Scanners, Lens design, Sensors, Polarization, Polarization control

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SPIE Journal Paper | 1 March 2016

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Graeupner

JM3, Vol. 15, Issue 02, 021205, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021205

KEYWORDS: Photomasks, Deep ultraviolet, Extreme ultraviolet, Diffraction, Extreme ultraviolet lithography, Refractive index, Lithography, Polarization, Chromium, Monochromatic aberrations

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Proceedings Article | 18 March 2015 Paper

Mask-induced best-focus-shifts in DUV and EUV lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Gräupner

Proceedings Volume 9426, 94260H (2015) https://doi.org/10.1117/12.2086346

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Refractive index, Extreme ultraviolet lithography, Polarization, Electroluminescent displays, Lithography, Optical proximity correction, Monochromatic aberrations

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Proceedings Article | 16 March 2015 Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau

Proceedings Volume 9422, 94221H (2015) https://doi.org/10.1117/12.2175658

KEYWORDS: Reticles, Imaging systems, Semiconducting wafers, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Image resolution, Source mask optimization, EUV optics

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Proceedings Article | 17 April 2014 Paper

EUV source-mask optimization for 7nm node and beyond

Xiaofeng Liu, Rafael Howell, Stephen Hsu, Kaiyu Yang, Keith Gronlund, Frank Driessen, Hua-Yu Liu, Steven Hansen, Koen van Ingen Schenau, Thijs Hollink, Paul van Adrichem, Kars Troost, Jörg Zimmermann, Oliver Schumann, Christoph Hennerkes, Paul Gräupner

Proceedings Volume 9048, 90480Q (2014) https://doi.org/10.1117/12.2047584

KEYWORDS: Source mask optimization, Photomasks, Extreme ultraviolet, Scanners, Fiber optic illuminators, 3D modeling, Optimization (mathematics), Extreme ultraviolet lithography, Deep ultraviolet, Algorithm development

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Proceedings Article | 1 April 2013 Paper

Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

Jens Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8679, 867915 (2013) https://doi.org/10.1117/12.2011455

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Diffraction, Reflectivity, Extreme ultraviolet, Image quality, Image quality standards, Binary data, Projection systems

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Proceedings Article | 1 April 2013 Paper

Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, 86791Q (2013) https://doi.org/10.1117/12.2011432

KEYWORDS: Photomasks, Image quality standards, Nanoimprint lithography, Lithography, Molybdenum, Binary data, Optical proximity correction, Extreme ultraviolet, Silicon, Multilayers

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Proceedings Article | 1 April 2013 Paper

Experimental verification of EUV mask limitations at high numerical apertures

Rikon Chao, Paul Graeupner, Eric Gullikson, Seong-Sue Kim, Jens-Timo Neumann, Ryan Miyakawa, Hwan-Seok Seo, Andy Neureuther, Patrick Naulleau

Proceedings Volume 8679, 86791M (2013) https://doi.org/10.1117/12.2013209

KEYWORDS: Data modeling, Reflectivity, Diffraction, Photomasks, Scatter measurement, Calibration, Extreme ultraviolet, Molybdenum, Silicon, Ruthenium

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Proceedings Article | 8 November 2012 Paper

Interactions of 3D mask effects and NA in EUV lithography

Jens Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8522, 852211 (2012) https://doi.org/10.1117/12.2009117

KEYWORDS: Photomasks, Reticles, Reflectivity, Image quality, Semiconducting wafers, Extreme ultraviolet lithography, Diffraction, Nanoimprint lithography, Projection systems, Extreme ultraviolet

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Proceedings Article | 8 April 2011 Paper

Deep ultraviolet out-of-band contribution in extreme ultraviolet lithography: predictions and experiments

Gian Lorusso, Natalia Davydova, Mark Eurlings, Cemil Kaya, Yue Peng, Kees Feenstra, Theodore Fedynyshyn, Oliver Natt, Peter Huber, Christoph Zaczek, Stuart Young, Paul Graeupner, Eric Hendrickx

Proceedings Volume 7969, 79692O (2011) https://doi.org/10.1117/12.879381

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Aluminum, Reflectivity, Extreme ultraviolet lithography, Semiconducting wafers, Plasma, Photoresist materials, Data modeling

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Extreme ultraviolet lithography (EUVL) sources emit a broad spectrum of wavelengths ranging from EUV to DUV and beyond. If the deep ultraviolet (DUV) reaches the wafer it will affect imaging performance by exposing the photoresist. Hence it is critical to determine the amount of DUV out of band (OoB) present in a EUVL tool, as well as its effect on the printed features on the wafer. In this study we investigate the effect of DUV OoB in EUVL. A model is developed in order to be able to quantify the DUV/EUV ratio at wafer level and all the required input parameters are estimated in the range from 140 to 400nm, as well as for the EUV at 13.5nm. The transmission of the optical system was estimated based on the optical design and reflectivity measurements of the mirrors. The mask reflectivity for multilayer (ML) and absorber was measured at wavelengths down to 140 nm and for EUV. The sensitivity to EUV and DUV for a variety of resist platforms was measured at 13.5 nm, 157 nm, 193 nm, 248 nm and 365 nm. The source spectra were also measured. By using these inputs, it was possible to estimate the DUV/EUV ratio for two different ASML tool configurations, the EUV Alpha Demo Tool and the NXE:3100. Both NXE:3100 with LPP (laser produced plasma) source and Alpha Demo Tool with DPP (discharge produced plasma) source show less than 1% DUV/EUV ratio in resist. The modeling predictions were compared to experimental results. A methodology is introduced to measure the DUV/EUV ratio at wafer level in situ. With this aim, an aluminum coated mask was fabricated and its reflectivity was qualified in both EUV and DUV wavelength range. By comparing the dose to clear exposures of a reflective blank and of the aluminum mask, it is possible to quantify the DUV/EUV ratio. The experimental results are in order of magnitude agreement with modeling predictions. The proposed experimental approach can be used to benchmark the DUV sensitivity of different resist platforms and may be used to monitor DUV OoB.

SPIE Journal Paper | 1 January 2011

Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

Joost Bekaert, Bart Laenens, Staf Verhaegen, Lieve Van Look, Darko Trivkovic, Frederic Lazzarino, Geert Vandenberghe, Paul van Adrichem, Robert Socha, Stephen Hsu, Hua-yu Liu, Orion Mouraille, Koen Schreel, Mircea Dusa, Jörg Zimmermann, Paul Gräupner, Jens Neumann

JM3, Vol. 10, Issue 1, 013008, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541778

KEYWORDS: Source mask optimization, Photomasks, Diffractive optical elements, Semiconducting wafers, Scanners, Manufacturing, Double patterning technology, Fiber optic illuminators, Optical lithography, Lithographic illumination

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Proceedings Article | 4 March 2010 Paper

Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells

J. Bekaert, B. Laenens, S. Verhaegen, L. Van Look, D. Trivkovic, F. Lazzarino, G. Vandenberghe, P. van Adrichem, R. Socha, S. Baron, M. C. Tsai, K. Ning, S. Hsu, H. Y. Liu, M. Mulder, A. Bouma, E. van der Heijden, O. Mouraille, K. Schreel, J. Finders, M. Dusa, J. Zimmermann, P. Gräupner, J. T. Neumann, C. Hennerkes

Proceedings Volume 7640, 764008 (2010) https://doi.org/10.1117/12.846918

KEYWORDS: Source mask optimization, Photomasks, Semiconducting wafers, Diffractive optical elements, Manufacturing, Double patterning technology, Scanners, Electroluminescence, Fiber optic illuminators, Optical lithography

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Proceedings Article | 4 March 2010 Paper

Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

Jörg Zimmermann, Paul Gräupner, Jens Neumann, Dirk Hellweg, Dirk Jürgens, Michael Patra, Christoph Hennerkes, Manfred Maul, Bernd Geh, Andre Engelen, Oscar Noordman, Melchior Mulder, Sean Park, Joep De Vocht

Proceedings Volume 7640, 764005 (2010) https://doi.org/10.1117/12.847282

KEYWORDS: Diffractive optical elements, Fiber optic illuminators, Reticles, Lithographic illumination, Mirrors, Critical dimension metrology, Distortion, Source mask optimization, Manufacturing, Semiconducting wafers

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SPIE Journal Paper | 1 October 2009

Imaging budgets for extreme ultraviolet optics: ready for 22-nm node and beyond

Marc Bienert, Aksel Göhnermeier, Oliver Natt, Martin Lowisch, Paul Gräupner, Tilmann Heil, Reiner Garreis, Koen van Ingen Schenau, Steven Hansen

JM3, Vol. 8, Issue 04, 041509, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238543

KEYWORDS: EUV optics, Extreme ultraviolet, Stray light, Critical dimension metrology, Nanoimprint lithography, Fiber optic illuminators, Photomasks, Optics manufacturing, Printing, Optical proximity correction

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Proceedings Article | 18 March 2009 Paper

Imaging budgets for EUV optics: ready for 22-nm node and beyond

Marc Bienert, Aksel Göhnemeier, Oliver Natt, Martin Lowisch, Paul Gräupner, Tilmann Heil, Reiner Garreis, Koen van Ingen Schenau, Steve Hansen

Proceedings Volume 7271, 72711B (2009) https://doi.org/10.1117/12.814185

KEYWORDS: Extreme ultraviolet, EUV optics, Nanoimprint lithography, Fiber optic illuminators, Critical dimension metrology, Optics manufacturing, Lithography, Optical proximity correction, Image processing, Solids

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Proceedings Article | 4 December 2008 Paper

Orientation Zernike Polynomials: a systematic description of polarized imaging using high NA lithography lenses

Tilmann Heil, Johannes Ruoff, Jens Timo Neumann, Michael Totzeck, Daniel Krähmer, Bernd Geh, Paul Gräupner

Proceedings Volume 7140, 714018 (2008) https://doi.org/10.1117/12.805438

KEYWORDS: Polarization, Wavefronts, Apodization, Zernike polynomials, Lithography, Critical dimension metrology, Imaging systems, Lithographic lenses, Diffraction, Process control

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Proceedings Article | 7 March 2008 Paper

High-n immersion lithography

Harry Sewell, Jan Mulkens, Paul Graeupner, Diane McCafferty, Louis Markoya, Sjoerd Donders, Rogier Cortie, Ralph Meijers, Fabrizio Evangelista, Nandarisi Samarakone

Proceedings Volume 6924, 692415 (2008) https://doi.org/10.1117/12.773071

KEYWORDS: Semiconducting wafers, Water, Contamination, Absorption, Microfluidics, Immersion lithography, Transparency, Optical components, Ultraviolet radiation, Pulsed laser operation

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Proceedings Article | 27 March 2007 Paper

Extending immersion lithography with high-index materials: results of a feasibility study

Harry Sewell, Jan Mulkens, Paul Graeupner, Diane McCafferty, Louis Markoya, Sjoerd Donders, Nandasiri Samarakone, Rudiger Duesing

Proceedings Volume 6520, 65201M (2007) https://doi.org/10.1117/12.711139

KEYWORDS: Microfluidics, Absorption, Semiconducting wafers, Neodymium, Water, Immersion lithography, Refractive index, Critical dimension metrology, Glasses, Contamination

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Proceedings Article | 26 March 2007 Paper

The impact of projection lens polarization properties on lithographic process at hyper-NA

Bernd Geh, Johannes Ruoff, Jörg Zimmermann, Paul Gräupner, Michael Totzeck, Markus Mengel, Uwe Hempelmann, Emil Schmitt-Weaver

Proceedings Volume 6520, 65200F (2007) https://doi.org/10.1117/12.722317

KEYWORDS: Polarization, Wave plates, Resolution enhancement technologies, Polarizers, Birefringence, Optical components, Apodization, Lithography, Matrices, Optical proximity correction

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Proceedings Article | 26 March 2007 Paper

Benefit of ArF immersion lithography in 55 nm logic device manufacturing

Takayuki Uchiyama, Takao Tamura, Kazuyuki Yoshimochi, Paul Graupner, Hans Bakker, Eelco van Setten, Kenji Morisaki

Proceedings Volume 6520, 652009 (2007) https://doi.org/10.1117/12.711054

KEYWORDS: Immersion lithography, Logic devices, Semiconducting wafers, Lithography, Overlay metrology, Monochromatic aberrations, Lithographic illumination, Scanners, Manufacturing, Electronics

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Proceedings Article | 15 March 2006 Paper

Catadioptric lens design: the breakthrough to hyper-NA optics

Bernhard Kneer, Paul Gräupner, Reiner Garreis, Ralph Kläsges, Heiko Feldmann

Proceedings Volume 6154, 615420 (2006) https://doi.org/10.1117/12.668024

KEYWORDS: Mirrors, Combined lens-mirror systems, Lens design, Coating, Optical design, Polarization, Chemical elements, Reticles, Stray light, Water

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Proceedings Article | 15 March 2006 Paper

The next phase for immersion lithography

Harry Sewell, Jan Mulkens, Diane McCafferty, Louis Markoya, Bob Streefkerk, Paul Graeupner

Proceedings Volume 6154, 615406 (2006) https://doi.org/10.1117/12.657574

KEYWORDS: Semiconducting wafers, Neodymium, Refractive index, Water, Immersion lithography, Microfluidics, Optical lithography, Critical dimension metrology, Absorption, Glasses

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SPIE Journal Paper | 1 July 2005

Polarization influence on imaging

Michael Totzeck, Paul Gräupner, Tilmann Heil, Aksel Göhnermeier, Olaf Dittmann, Daniel Kraehmer, Vladimir Kamenov, Johannes Ruoff, Donis Flagello

JM3, Vol. 4, Issue 03, 031108, (July 2005) https://doi.org/10.1117/12.10.1117/1.2049187

KEYWORDS: Polarization, Diffraction, Wavefronts, Imaging systems, Zernike polynomials, Superposition, Jones vectors, Radio propagation, Birefringence, Lithography

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Proceedings Article | 12 May 2005 Paper

How to describe polarization influence on imaging

M. Totzeck, P. Graupner, T. Heil, A. Gohnermeier, O. Dittmann, D. Krahmer, V. Kamenov, J. Ruoff, D. Flagello

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599908

KEYWORDS: Polarization, Diffraction, Wavefronts, Superposition, Imaging systems, Jones vectors, Zernike polynomials, Radio propagation, Wave propagation, Birefringence

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Proceedings Article | 28 May 2004 Paper

Extending optical lithography with immersion

Bob Streefkerk, Jan Baselmans, Wendy Gehoel-van Ansem, Jan Mulkens, Chris Hoogendam, Martin Hoogendorp, Donis Flagello, Harry Sewell, Paul Graupner

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534009

KEYWORDS: Semiconducting wafers, Immersion lithography, Prototyping, Microfluidics, Optical lithography, Wafer-level optics, Image sensors, Imaging systems, Lithography, Scanners

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Proceedings Article | 28 May 2004 Paper

Predictive modeling of advanced illumination pupils used as imaging enhancement for low k1 applications

Tilmann Heil, Paul Graupner, Reiner Garreis, Rafael Egger, Markus Brotsack, Jo Finders, Steve Hansen

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537199

KEYWORDS: Fiber optic illuminators, Optical proximity correction, Lithographic illumination, Computer simulations, Lithography, Data modeling, Critical dimension metrology, Performance modeling, Optical lithography, Linear filtering

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SPIE Journal Paper | 1 January 2004

Benefits and limitations of immersion lithography

Jan Mulkens, Donis Flagello, Bob Streefkerk, Paul Gräupner

JM3, Vol. 3, Issue 01, (January 2004) https://doi.org/10.1117/12.10.1117/1.1636768

KEYWORDS: Photoresist materials, Semiconducting wafers, Water, Liquids, Polarization, Immersion lithography, Lithography, Fluid dynamics, Microfluidics, Refractive index

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Proceedings Article | 26 June 2003 Paper

Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

Jos de Klerk, Louis Jorritsma, Eelco van Setten, Richard Droste, Richard du Croo de Jongh, Steven Hansen, Dan Smith, Mark van de Kerkhof, Frank van de Mast, Paul Graeupner, Thomas Rohe, Klaus Kornitzer

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485372

KEYWORDS: Imaging systems, Photomasks, Semiconducting wafers, Control systems, Binary data, Reticles, Optics manufacturing, Critical dimension metrology, Phase shifts, Distortion

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Proceedings Article | 26 June 2003 Paper

Optimizing and enhancing optical systems to meet the low k₁ challenge

Donis Flagello, Robert Socha, Xuelong Shi, Jan van Schoot, Jan Baselmans, Mark van de Kerkhof, Wim de Boeij, Andre Engelen, Rene Carpaij, Oscar Noordman, Marco Moers, Melchior Mulder, Jo Finders, Henk van Greevenbroek, Martin Schriever, Manfred Maul, Helmut Haidner, Markus Goeppert, Ulrich Wegmann, Paul Graeupner

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485340

KEYWORDS: Lithographic illumination, Reticles, Wavefronts, Sensors, Semiconducting wafers, Light scattering, Lithography, Critical dimension metrology, Scanners, Control systems

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Proceedings Article | 26 June 2003 Paper

Impact of wavefront errors on low k1 processes at extremely high NA

Paul Graeupner, Reiner Garreis, Aksel Goehnermeier, Tilmann Heil, Martin Lowisch, Donis Flagello

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.482694

KEYWORDS: Monochromatic aberrations, Critical dimension metrology, Lithography, Wavefronts, Lawrencium, Spherical lenses, Wavefront aberrations, Zernike polynomials, Systems modeling, 193nm lithography

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Proceedings Article | 30 July 2002 Paper

Solutions for printing sub-100-nm contacts with ArF

Paul Graeupner, Aksel Goehnermeier, Martin Lowisch, Reiner Garreis, Donis Flagello, Steven Hansen, Robert Socha, Carsten Koehler

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474569

KEYWORDS: Photomasks, Printing, Nanoimprint lithography, Image processing, Lithography, Image filtering, Reticles, Binary data, Monochromatic aberrations, Electroluminescence

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Proceedings Article | 14 September 2001 Paper

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement

Jan van Schoot, Nakgeuon Seong, Bernd Geh, Martin Burkhardt, Paul Graeupner, Gerd Reisinger, Rian Rubingh, Manfred Suddendorf, Jo Finders, Erwin Rikkers

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435723

KEYWORDS: Lithography, Printing, Monochromatic aberrations, Wavefronts, Scanning electron microscopy, Manufacturing, Transistors, Zernike polynomials, Resolution enhancement technologies, Logic

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Showing 5 of 57 publications

Conference Committee Involvement (2)

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

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