Dr. Peter J. Carrington Profile

Dr. Peter J. Carrington

Senior Lecturer at Lancaster Univ

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Author

Publications (8)

Proceedings Article | 13 March 2024 Presentation

Design and optimisation of MBE-grown GaAs-based "W"-lasers for O-band applications

Dominic Duffy, Igor Marko, Matthew Bentley, Andrew Marshall, Samir Rihani, Graham Berry, Michael Robertson, John Rawsthorne, Peter Carrington, Stephen Sweeney

Proceedings Volume PC12905, PC1290501 (2024) https://doi.org/10.1117/12.3002312

KEYWORDS: Design and modelling, Emission wavelengths, Waveguides, Thermal stability, Temperature metrology, Semiconductor lasers, Photoluminescence, Near infrared, Mathematical optimization, Laser damage threshold

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Proceedings Article | 22 August 2020 Presentation + Paper

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Peter Carrington, Evangelia Delli, Veronica Letka, Matt Bentley, Peter Hodgson, Eva Repiso, Jonathan Hayton, Adam Craig, Qi Lu, Richard Beanland, Anthony Krier, Andrew R. Marshall

Proceedings Volume 11503, 115030G (2020) https://doi.org/10.1117/12.2568741

KEYWORDS: Superlattices, Silicon, Sensors, Gallium antimonide, Antimony, Photodetectors, Indium arsenide, Absorption

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Proceedings Article | 23 September 2016 Presentation + Paper

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

P. Carrington, D. Montesdeoca, H. Fujita, J. James, M. Wagener, J. Botha, A. R. Marshall, A. Krier

Proceedings Volume 9937, 993708 (2016) https://doi.org/10.1117/12.2236957

KEYWORDS: Solar cells, Gallium antimonide, Gallium arsenide, Photons, Absorption, Sun, External quantum efficiency, Quantum efficiency, Luminescence, Antimony

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Proceedings Article | 16 September 2016 Presentation + Paper

InSb-based quantum dot nanostructures for mid-infrared photonic devices

P. Carrington, E. Repiso, Q. Lu, H. Fujita, A. R. J. Marshall, Q. Zhuang, A. Krier

Proceedings Volume 9919, 99190C (2016) https://doi.org/10.1117/12.2236869

KEYWORDS: Quantum dots, Mid-IR, Light emitting diodes, Quantum wells, Nanostructures, Photonic devices, Indium arsenide, Electroluminescence, Gallium antimonide, Electrons

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Proceedings Article | 4 February 2013 Paper

InAs-based dilute nitride materials and devices for the mid-infrared spectral range

A. Krier, M. de la Mare, Q. Zhuang, P. Carrington, A. Patane

Proceedings Volume 8631, 86311Q (2013) https://doi.org/10.1117/12.2008800

KEYWORDS: Quantum wells, Indium arsenide, Nitrogen, Mid-IR, Electroluminescence, Gallium arsenide, Antimony, Chromium, Luminescence, Light emitting diodes

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Proceedings Article | 24 January 2011 Paper

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

M. de la Mare, A. Krier, Q. Zhuang, P. Carrington, A. Patane

Proceedings Volume 7945, 79450L (2011) https://doi.org/10.1117/12.872759

KEYWORDS: Indium arsenide, Nitrogen, Gallium arsenide, Quantum wells, Mid-IR, Luminescence, Plasma, Optoelectronic devices, Crystals, Temperature metrology

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Proceedings Article | 1 February 2008 Paper

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

P. Carrington, V. Solov'ev, Q. Zhuang, S. Ivanov, A. Krier

Proceedings Volume 6900, 69000I (2008) https://doi.org/10.1117/12.755465

KEYWORDS: Indium arsenide, Light emitting diodes, Antimony, Electroluminescence, Mid-IR, Quantum dots, Temperature metrology, Luminescence, Quantum cascade lasers, Molecular beam epitaxy

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Proceedings Article | 13 October 2006 Paper

Mid-infrared diode lasers for free-space optical communications

M. Yin, A. Krier, S. Krier, R. Jones, P. Carrington

Proceedings Volume 6399, 63990C (2006) https://doi.org/10.1117/12.688238

KEYWORDS: Indium arsenide, Antimony, Cladding, Semiconductor lasers, Liquid phase epitaxy, Temperature metrology, Pulsed laser operation, Mid-IR, Free space optical communications, Laser damage threshold

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Showing 5 of 8 publications

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