Dr. Rebecca J. Martinez Profile

Dr. Rebecca J. Martinez

Production Manager at Wafer Technology Ltd

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 19 May 2020 Presentation + Paper

Large format multi-wafer production of LWIR photodetector structures on 150mm GaSb substrates by MBE

S. Nelson, J. Fastenau, D. Lubyshev, M. Kattner, P. Frey, A. W. Liu, B. Martinez, M. Furlong

Proceedings Volume 11407, 114070F (2020) https://doi.org/10.1117/12.2559403

KEYWORDS: Gallium antimonide, Semiconducting wafers, Long wavelength infrared, Photodetectors, Quantum efficiency, Epitaxy, Superlattices, Sensors, Mid-IR

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Proceedings Article | 14 May 2019 Presentation + Paper

Chemomechanical polishing methods and surface metrology of cadmium zinc telluride substrates suitable for IRFPA production

T. Sheahan, B. Martinez, M. Cooper, J. Mackenzie, L. Burgess, F. Kumar, M. Furlong

Proceedings Volume 11002, 110020P (2019) https://doi.org/10.1117/12.2521202

KEYWORDS: Surface finishing, Polishing, Chemical mechanical planarization, Chemistry, Etching, Cadmium, Zinc, Oxides, Sensors, Compound semiconductors

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High quality substrates are a critical requirement for the epitaxial growth of high performance Group III-V (GaSb, InP, GaAs) or II-VI (MCT) based IR detector structures. Techniques such as MBE, LPE or MOCVD used to grow complex multilayer structures where the bulk and surface characteristics of the underlying substrate strongly influences the quality of the deposited device layers and thus the performance of the detector fabricated too. And whilst for Group III-V substrates, ‘epitaxy ready’ surfaces are very much the norm with no surface pre-treatment required prior to growth, much debate exists over whether it is possible to prepare Cadmium Zinc Telluride (CZT) substrates in the same way with commercially available substrates often etched or pre-polished prior to epitaxial growth. In this work we discuss the key factors which determine the ‘epi-readiness’ of a compound semiconductor substrate and identify the challenges which are associated with polishing ternary materials when compared with binary compounds. We also discuss the role which bulk CZT crystal quality plays on chemo-mechanical polish surface quality and the importance of substrate selection and screening steps to ensure that high quality substrates are obtained. We also compare the maturity level of infrared substrate materials such as GaSb with CZT and propose how CZT substrates can be chemo-mechanically polished in a production setting with the same tool sets as used to produce volume quantities of III-V compound semiconductor substrates in epitaxy ready form, as opposed to smaller scale, bespoke finishing processes. A forward looking view is given on the potential to align II-VI and III-V substrate manufacturing technologies in a way that supports product standardization and conformity at a time when demands for IR specification substrates is forecast to increase. Not only in quantity but also size where more stringent bulk and surface quality is required if state of the art, very large format detectors are to be delivered.

Proceedings Article | 7 May 2019 Presentation + Paper

T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates

Dmitri Lubyshev, Joel Fastenau, Michael Kattner, Phillip Frey, Scott Nelson, Amy W. Liu, Becky Martinez, Mark Furlong

Proceedings Volume 11002, 110020N (2019) https://doi.org/10.1117/12.2521066

KEYWORDS: Long wavelength infrared, Quantum efficiency, Photodetectors, Gallium antimonide, Diodes, Mid-IR, Semiconducting wafers, Absorption

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Proceedings Article | 7 May 2019 Presentation + Paper

Increasing throughput and quality of large area GaSb substrates used in infrared focal plane array production

Shanmugam Aravazhi, Becky Martinez, Mark Furlong

Proceedings Volume 11002, 110020O (2019) https://doi.org/10.1117/12.2518960

KEYWORDS: Crystals, Gallium antimonide, Gallium, Antimony, Tellurium, X-rays, Sensors, Infrared radiation

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Proceedings Article | 16 May 2017 Paper

Standardizing large format 5" GaSb and InSb substrate production

Becky Martinez, J. Patrick Flint, G. Dallas, B. Smith, M. Tybjerg, Shanmugam Aravazhi, Mark Furlong

Proceedings Volume 10177, 101772L (2017) https://doi.org/10.1117/12.2263961

KEYWORDS: Gallium antimonide, Crystals, Epitaxy, Compound semiconductors, Process control, Gallium arsenide, Semiconducting wafers, Yield improvement, Indium, Polishing, Statistical analysis

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Proceedings Article | 16 May 2017 Presentation + Paper

Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

J. Flint, B. Martinez, T. E. Betz, J. Mackenzie, F. Kumar, L. Burgess

Proceedings Volume 10177, 1017717 (2017) https://doi.org/10.1117/12.2263960

KEYWORDS: Infrared detectors, Cadmium, Zinc, Polishing, Surface finishing, Epitaxy, Compound semiconductors, Crystals, Manufacturing, Infrared materials, Semiconducting wafers, Oxides, Tellurium

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Proceedings Article | 20 May 2016 Paper

Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

J. Flint, B. Martinez, T. E. Betz, J. MacKenzie, F. Kumar, G. Bindley

Proceedings Volume 9819, 981913 (2016) https://doi.org/10.1117/12.2225796

KEYWORDS: Cadmium, Zinc, Infrared imaging, Surface finishing, Crystals, Surface finishing, Polishing, Oxides, Tellurium, Infrared detectors, X-rays

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Proceedings Article | 20 May 2016 Paper

A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth

Rebecca Martinez, Marius Tybjerg, Patrick Flint, Joel Fastenau, Dmitri Lubyshev, Amy Liu, Mark Furlong

Proceedings Volume 9819, 981916 (2016) https://doi.org/10.1117/12.2225993

KEYWORDS: Gallium antimonide, Surface finishing, Polishing, Semiconducting wafers, Chemical mechanical planarization, Crystals, Oxides, Air contamination, Etching, Chemistry

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Proceedings Article | 4 June 2015 Paper

MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates

Amy Liu, Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Ying Wu, Mark Furlong, Marius Tybjerg, Rebecca Martinez, Andrew Mowbray, Brian Smith

Proceedings Volume 9451, 94510T (2015) https://doi.org/10.1117/12.2178122

KEYWORDS: Gallium antimonide, Semiconducting wafers, Quantum efficiency, Photodetectors, Diodes, Sensors, Infrared radiation, Manufacturing, Infrared imaging, Mid-IR

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Proceedings Article | 4 June 2015 Paper

A study of doping influences on transmission of large-diameter gallium antimonide substrates for long-wave (LWIR) to very long wavelength (VLWIR) infra-red applications

Rebecca Martinez, Marius Tybjerg, Brian Smith, Andrew Mowbray, Mark Furlong

Proceedings Volume 9451, 94510U (2015) https://doi.org/10.1117/12.2178089

KEYWORDS: Gallium antimonide, Crystals, Doping, Tellurium, Semiconducting wafers, Long wavelength infrared, Transparency, Infrared sensors, Sensors, FT-IR spectroscopy

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Proceedings Article | 4 June 2015 Paper

Growth and characterization of ≥6” epitaxy-ready GaSb substrates for use in large area infrared imaging applications

M. Furlong, B. Martinez, M. Tybjerg, B. Smith, A. Mowbray

Proceedings Volume 9451, 94510S (2015) https://doi.org/10.1117/12.2178040

KEYWORDS: Gallium antimonide, Crystals, Semiconducting wafers, Sensors, Oxides, Polishing, Gallium arsenide, Gallium, Infrared imaging, Etching

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Proceedings Article | 24 June 2014 Paper

Growth and characterization of 6" InSb substrates for use in large-area infrared-imaging applications

Mark Furlong, Gordon Dallas, Greg Meshew, J. Patrick Flint, David Small, Becky Martinez, Andrew Mowbray

Proceedings Volume 9070, 907016 (2014) https://doi.org/10.1117/12.2053969

KEYWORDS: Crystals, Infrared radiation, Infrared imaging, Infrared technology, Current controlled current source, Phase modulation, Laser phosphor displays, Gallium nitride, Indium, Mid-IR

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Proceedings Article | 31 January 2014 Paper

Growth and characterization of 6" InSb substrates for use in large area infrared imaging applications

Mark Furlong, Gordon Dallas, Greg Meshew, J. Patrick Flint, David Small, Becky Martinez, Andrew Mowbray

Proceedings Volume 8993, 89931J (2014) https://doi.org/10.1117/12.2042393

KEYWORDS: Crystals, Semiconducting wafers, Surface finishing, Polishing, Staring arrays, Surface roughness, Oxides, Infrared imaging, Sensors, Compound semiconductors

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Proceedings Article | 11 June 2013 Paper

Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, Andrew Mowbray, Brian Smith, Dmitri Lubyshev, Joel Fastenau, Amy W. Liu

Proceedings Volume 8704, 870411 (2013) https://doi.org/10.1117/12.2016681

KEYWORDS: Gallium antimonide, Semiconducting wafers, Crystals, Polishing, Surface finishing, Sensors, Oxides, Surface roughness, Etching, Ions

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Proceedings Article | 4 February 2013 Paper

Towards the production of very low defect GaSb and InSb substrates: bulk crystal growth, defect analysis and scaling challenges

R. Martinez, S. Amirhaghi, B. Smith, A. Mowbray, Mark Furlong, J. Flint, G. Dallas, G. Meshew, J. Trevethan

Proceedings Volume 8631, 86311N (2013) https://doi.org/10.1117/12.2005130

KEYWORDS: Crystals, Gallium antimonide, Semiconducting wafers, Etching, Sensors, Staring arrays, Manufacturing, Compound semiconductors, Wafer-level optics, X-ray diffraction

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Proceedings Article | 31 May 2012 Paper

Large diameter 'ultra-flat' epitaxy ready GaSb substrates: requirements for MBE grown advanced infrared detectors

Rebecca Martinez, Sasson Amirhaghi, Brian Smith, Andrew Mowbray, Mark Furlong

Proceedings Volume 8353, 835314 (2012) https://doi.org/10.1117/12.919777

KEYWORDS: Gallium antimonide, Semiconducting wafers, Crystals, Surface finishing, Polishing, Sensors, Infrared detectors, Oxides, Epitaxy, Manufacturing

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Proceedings Article | 21 January 2012 Paper

Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, Brian Smith, Andrew Mowbray

Proceedings Volume 8268, 826818 (2012) https://doi.org/10.1117/12.908303

KEYWORDS: Gallium antimonide, Semiconducting wafers, Crystals, Oxides, Surface finishing, Sensors, Polishing, Infrared detectors, Manufacturing, Surface roughness

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Proceedings Article | 21 January 2012 Paper

Surface chemistry improvement of 100mm GaSb for advanced space based applications

L. Allen, J. P. Flint, G. Meshew, J. Trevethan, M. Furlong, B. Martinez, A. Mobray

Proceedings Volume 8268, 826819 (2012) https://doi.org/10.1117/12.904778

KEYWORDS: Digital signal processing, Gallium antimonide, Surface finishing, Oxides, Semiconducting wafers, Antimony, Polishing, Gallium, Chemical mechanical planarization, Laser sintering

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Proceedings Article | 21 May 2011 Paper

Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, David Small, Brian Smith, Andrew Mowbray

Proceedings Volume 8012, 801211 (2011) https://doi.org/10.1117/12.884450

KEYWORDS: Gallium antimonide, Semiconducting wafers, Crystals, Oxides, Surface roughness, Sensors, Surface finishing, Etching, Epitaxy, Edge roughness

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Proceedings Article | 4 May 2010 Paper

Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, Dmitri Loubychev, Joel Fastenau, Xing Gu, Amy W. Liu

Proceedings Volume 7660, 76601K (2010) https://doi.org/10.1117/12.850442

KEYWORDS: Gallium antimonide, Semiconducting wafers, Laser sintering, Crystals, Surface roughness, Oxides, Sensors, Superlattices, Etching, X-rays

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Showing 5 of 20 publications

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