Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.
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