Recent work is reported on the growth and characterization of boron nitride thin films on 1 cm2 Si (100) substrates by a newly developed reactive laser ablation technique. The exact nature of the resulting films is highly process dependent and is analyzed by ion channeling and Fourier transform infrared spectroscopy (FTIR). The thermal properties of these films are studied by thermal wave analysis, and they are found to be highly dependent on the crystallographic structure. This value is believed to be the best thermal conductivity measured for boron nitride films to date.
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