The integration of III-V compound semiconductors on a silicon platform has emerged as a transformative approach to enhance the performance and functionality of photonic and optoelectronic devices. This paper presents recent achievements, challenges, and future prospects of GaAs monolithic integration on silicon with a specific focus in the development of near-infrared (NIR) emitters and photodetectors.
We address the challenges associated with III-V monolithic integration on silicon and its compatibility with CMOS processes. These challenges include lattice mismatches, thermal management, and process scalability. We present our latest results obtained on near infrared resonant cavity enhanced photodetector and light emitting devices integrated onto a nominal Si(001) substrate. The devices structures have been optimized by incorporating active regions based on InGaAs/GaAsP strained-layer superlattices and GaAs/AlGaAs distributed Bragg Reflectors. We also show an alternative solution to fabricate low-threshold emitters based on III-As membranes and lateral injection devices.
Since 2009, CEA have started a long term program to achieve the collective realisation of a large (32x32 pixels) μ-Calorimeters camera for X-ray Astrophysics. This camera is based on silicon doped sensors with Composite Tantalum absorber readout thanks to HEMT/SiGe based Cryo-Electronics. The goal of this development is to achieve a spectral resolution of about 2eV@6keV in a thermal budget of ∼ 1μW@50mK for over 4000 pixels. In the course of this R and D program, we have started a deep system approach and developed various technics to achieve a compact Focal Plane Array (hereafter FPA) design. In this paper, we present most of these technics. Some are dedicated to high impedance sensors such as Silicon doped sensors or High resistivity TES (NbSi HRTES) and other may of much more general use for Astronomical Sub-K spatial instruments. We will present here the status of our development and our FPA integration technics.
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