We present the MEXL, a novel type of vertically emitting semiconductor laser for biomedical applications. The core component of this laser system is the gain crystal based on a thin semiconductor membrane, which enables the fabrication of extremely compact laser modules. We discuss the current status of our MEXL developments and demonstrate multi-watt output powers in the visible spectral range.
We study coherent laser arrays operating in epitaxially grown semiconductor membrane quantum wells. The samples are deposited by transfer on substrates of oxidized silicon and we record the real and reciprocal space of the laser emission. The Laser arrays are in a lateral emission geometry and are waveguides lasers where the end mirrors are the end-facets of the cleaved membranes which usually form cavities in the order of 100 microns. We are able to create waveguide laser arrays with modal widths of approximately 5-10 microns separated by 10-20 microns. We use real and reciprocal space imaging to examine the emission characteristics of the lasing cavity. Remarkably, we discover that the mutual coherence is preserved whether the cavity operates on a single longitudinal mode or multiple modes. We will show how their emission and coherence can be controlled using a digital micromirror device to control the position and shape of the pump illumination studying threshold, coherence and frequency.
We present continuous wave bi-frequency operation in an optically pumped membrane external-cavity surface-emitting laser (MECSEL). A laser ablation system utilising a digital micromirror device is used to define areas of intra-cavity loss by removing Bragg layers from the surface of the cavity mirror in a crosshair pattern with an undamaged central area. Our MECSEL simultaneously operates on two Hermite-Gaussian spatial modes, the fundamental and a higher order mode, by aligning the laser cavity to be centred on a masked area. We demonstrate bi-frequency operation with a wavelength separation on the order of 5 nm around 1005 nm.
We present coherent laser arrays in a silicon photonics compatible waveguide geometry in optically pumped semiconductor membrane quantum well lasers (MQWLs) on oxidised silicon and silicon carbide substrates. Real and reciprocal space imaging is used to investigate the emission of the laser arrays and mutual coherence is seen to be maintained while operating on single and multiple longitudinal modes in each cavity. Further, we investigate writing laser cavity arrays through micro-structuring of the MQWL and also through the utilisation of a spatial light modulator (SLM) to define areas of gain in the MQWL by shaping the pump beam.
Membrane-external-cavity surface-emitting lasers (MECSELs) consist of an epitaxial active region directly bonded to at least one transparent heatspreader with external cavity mirrors for feedback. This structure enables significant flexibility in the emission wavelength and yields a standalone laser gain medium amenable to enhanced power scaling via optimized thermal management. We outline a 4” wafer-scale manufacturing process for dual-SiC-heatspreader (SiC/epi/SiC) gain chips, incorporating external dielectric coatings and metallization for intimate mounting to a heatsink. Our process leverages low-temperature wafer bonding in concert with traditional deposition, lithography, and etching steps, allows hundreds of MECSEL gain chips to be simultaneously produced.
Optically pumped waveguide coherent laser arrays are demonstrated in an 1-micron-thick-semiconductor-membrane-InGaAs-quantum-well laser transferred on a silicon carbide heat spreader emitting at 1010 nm. We employ a real and Fourier space imaging setup to study the emission of single and arrays of laser cavities. We are able to create waveguide laser arrays with modal widths of approximately 5-10 μm separated by 5-10 μm which maintain their mutual coherence while operating on either single or multiple longitudinal modes. This laser geometry can be accurately controlled by the laser pump and they offer a new high gain laser platform that permits integration with photonic structures.
Ultra-short pulse generation with saturable-absorber-free vertical-external-cavity surface-emitting-lasers (VECSELs) has raised significant interest in recent years due to the promises it holds for further peak-power scaling and cost-efficiency as well as for the design of more flexible, compact and simpler cavities. Although demonstrated for various devices, the self-mode-locking phenomenon in VECSELs still lacks a consistent explanation. Here, nonlinear lensing in a VECSEL gain chip as a possible mode-locking mechanism, directly measured via Z-scans at laser-relevant wavelengths, and the role of the microcavity resonance on the strength and dispersion of the Kerr nonlinearity are discussed. Furthermore, the impact on self-mode-locking is considered.
Semiconductor disk lasers, also called vertical external-cavity surface-emitting lasers (VECSELs) have advantageous properties such as high output power, wavelength flexibility due to bandgap engineering and near-diffraction limited beam quality. The possibility to insert intra-cavity elements – filters, frequency doubling crystals or semiconductor saturable absorber mirrors (SESAMs) – enables wavelength tuning, second harmonic generation or mode locking with ultra-short pulses. A major challenge for these laser sources is the removal of heat which is introduced by optical pumping. The thermal management can improved by placing only the active region directly between two heat spreaders. This membrane external-cavity surface-emitting laser (MECSEL) allows emission in an even larger wavelength range, since the growth is not restricted by a distributed Bragg reflector.
We present the fabrication, processing and characterization of MECSELs using different material systems for laser emission at various wavelengths in the visible and in the infrared spectral range. Our semiconductor structures are grown by metal-organic vapor-phase epitaxy and contain quantum wells (QWs) or quantum dots (QDs) in the active regions. We discuss our latest results of the membrane laser concept with investigations of strain effects on the photoluminescence and the laser emission and different pumping schemes.
In particular, we show results of a MECSEL placed into a linear cavity and pumped by a 532 nm laser. The system was operated at a heat sink temperature of 10°C and achieved nearly 600 mW at 3.7 W pump power. The slope efficiency achieved here was 22.3 % with a threshold pump power of 1 W. This slope efficiency exceeds any slope efficiency published before with green pumped conventional VECSEL in this emission range at these elevated heatsink temperatures. Including a birefringent filter into the laser cavity allows for a tuning of the emission laser wavelength. The group could demonstrate a tuning range of 24 nm (650 nm – 674 nm), which is the highest value achieved in this spectral range by semiconductor lasers to date. All these achievements come with the expected Gaussian TEM00 mode with a beam quality factor of M2< 1.06[Optica 3(12), 1506-1512 (2016)].
To demonstrate the flexibility and usability of the MECSEL approach, we have created an optically pumped laser with a GaInAsP membrane for emission around 1000 nm, together with a group in Dundee. The set-up of the laser was similar to that of the red spectral range but instead of diamond, SiC was used as heat spreader material. Nevertheless, the achieved output powers could exceed 10 W with a slope efficiency of 27.5% and this with the heat spreader on only one side. This work was as well recently published in Electronic Letters 2017 [DOI:10.1049/el.2017.2689]. Actually, we realized a running membrane laser at a wavelength of 608 nm, a wavelength not accessible so far. The characterization measurements are now ongoing, first results will be presented at the conference.
Semiconductor disk lasers, also called vertical external-cavity surface-emitting lasers (VECSELs) have advantageous properties such as high output power, wavelength flexibility due to bandgap engineering and near-diffraction limited beam quality. The possibility to insert intra-cavity elements – filters, frequency doubling crystals or semiconductor saturable absorber mirrors (SESAMs) – enables wavelength tuning, second harmonic generation or mode locking with ultra-short pulses. A major challenge for these laser sources is the removal of heat which is introduced by optical pumping. The thermal management can be improved by placing only the active region directly between two heat spreaders. This membrane external-cavity surface-emitting laser (MECSEL) allows emission in an even larger wavelength range, since the growth is not restricted by a distributed Bragg reflector.
We present the fabrication, processing and characterization of VECSELs and MECSELs using different material systems for laser emission at various wavelengths in the visible and in the infrared spectral range. Our semiconductor structures are grown by metal-organic vapor-phase epitaxy and contain quantum wells or quantum dots in the active regions. We discuss our latest results including the membrane laser concept with investigations of strain effects on the photoluminescence and the laser emission, different pumping schemes and ultra-short pulse generation.
Since 2000, semiconductor saturable absorber mirrors (SESAMs) have been used to realize mode locking of vertical external-cavity surface-emitting lasers (VECSELs), achieving femtosecond pulse durations, GHZ repetition rates and several Watts of average output power. Despite these excellent results, SESAMs which have to be carefully adjusted to the gain structure can be a limiting factor for the development of a cost-effective pulsed laser system. In recent years, a new concept of VECSEL mode locking, the self-mode locking technique, has been demonstrated. While the mechanism behind this kind of mode locking is not yet fully explained, most publications focus on the effect of Kerr lensing.
We present first experiments on SESAM-free mode locking of red-emitting AlGaInP-VECSELs with different cavity geometries based on the assumption of Kerr lensing in the active region. Our semiconductor samples are grown by metal-organic vapor-phase epitaxy with an active region containing GaInP quantum wells embedded in AlGaInP barriers and cladding layers. In order to exploit the effect of Kerr lensing, a slit is placed inside the cavity acting as a hard aperture. When the beam width is confined, pulsed operation is observed by oscilloscope and autocorrelation measurements. Ongoing research is focusing on a detailed characterization of the pulsed laser to improve one's understanding of the obtained SESAM-free mode-locked operation.
In AlGaInP based VECSELs, a low thermal conductivity of the substrate with included distributed Bragg reflector leads to a strong temperature-dependent performance due to the limited charge-carrier confinement. For efficient heat removal, a good bonding between VECSEL-chip and intra-cavity heat spreader is indispensable. Here, a new designed sample holding device which allows improved bonding is presented. With this device, the laser performance of a barrier-pumped AlGaInP VECSEL emitting at 665 nm could be improved tremendously which resulted in an output power of more than 1W at a heatsink temperature of 10°C. We present a full characterization of the laser system including a comparison between standard and the new device.
Semiconductor disk lasers with all their advantages1 became an important stand-alone class of solid-state lasers during the last years. However, these systems suffer from heat incorporation into the active region caused by the excess energy of the pump photons. To overcome this limitation we realized the semiconductor membrane external-cavity surface-emitting laser as a diamond heat spreader sandwiched active region design. A detailed process description towards the MECSEL2 approach is given as well as fundamental performance values. Furthermore, parasitic lateral lasing effects are discovered and investigated. Nevertheless, the MECSEL approach indicates enormous potential to revolutionize the semiconductor based disk lasers regarding available output powers at room temperature and material combinations.
Keys to high-power operation of disk lasers are a thin active layer, a small Stokes shift and an efficient cooling, best realized with a limited number of QWs which are pumped close to the laser wavelength and which are in close contact with one or two diamond heat sinks. To get sufficient pump absorption many passes of the pump radiation are needed. This can be realized either by taking advantage of intrinsic resonances (designed for the pump radiation) or by an external multi-pass optics (known from Yb disk lasers) or a combination of both. The various options will be discussed and some results for AlGaInP disk lasers will be presented.
The wide range of applications in biophotonics, television or projectors, spectroscopy and lithography made the optically-pumped semiconductor (OPS) vertical external cavity surface-emitting lasers (VECSELs) an important category of power scalable lasers. The possibility of bandgap engineering, inserting frequency selective and converting elements into the open laser cavity and laser emission in the fundamental Gaussian mode leads to ongoing growth of the area of applications for tuneable laser sources. We present an AlGaInP-VECSEL system with a multi quantum well structure consisting of compressively strained GaInP quantum wells in an AlxGa1-xInP separate confinement heterostructure with an emission wavelength around 665 nm. The VECSEL chip with its n-λ cavity is pumped by a 532nm Nd:YAG laser under an angle to the normal incidence of 50°. In comparison, a gain chip design for high absorption values at pump wavelengths around 640nm with the use of quantum dot layers as active material is also presented. Frequency doubling is now realized with an antireflection coated lithium borate crystal, while a birefringent filter, placed inside the laser cavity under Brewster's angle, is used for frequency tuning. Further, power-scaling methods like in-well pumping as well as embedding the active region of a VECSEL between two transparent ic heaspreaders are under investigation.
We report a continuous wave operation of a quantum-well and multi-pass-pumped AlGaInP based red vertical-external cavity surface-emitting laser emitting at 660 nm. The laser output power was 1.5 W with a slope efficiency of 35 %. The critical role of optimizing the sample design both for the pump and laser wavelengths, pump spot size, and the number of pump light passes were experimentally investigated.
We present passive mode locking of a vertical external-cavity surface-emitting laser (VECSEL) in the red spectral range with quantum dots (QDs) as active material in the gain and in the absorber structure. Both semiconductor samples are fabricated by metal-organic vapor-phase epitaxy (MOVPE) in a near-anti-resonant design. A vshaped cavity is used to tightly focus onto the semiconductor saturable absorber mirror (SESAM), producing pulses with a duration of less than 1 ps and a repetition rate of 852MHz. In order to increase the field enhancement inside the absorber structure, some SESAM samples were additionally coated with a fused silica layer. The pulse duration as well as the mode locking stability were investigated for different thicknesses of the SiO2 layer. The most stable mode locking operation is observed for a 97 nm SiO2 layer, while the disadvantage of this overall near-resonant SESAM structure is an increased pulse duration of around 2 ps. Due to the improved stability, the transmission of the outcoupling mirror could be increased resulting in an average output power of 10mW at an emission wavelength of 651 nm.
Optically pumped semiconductor (OPS) vertical external-cavity surface-emitting lasers (VECSELs) are an important category of power scalable lasers with a wide range of applications in biophotonics, medicine technologies, spectroscopy, projector technologies and lithography. The open laser resonator allows to implement frequency selective and converting intra-cavity elements. The possibility of bandgap engineering, laser emission in the fundamental Gaussian mode and the technical simplicity leads to ongoing growth of the area of applications for these tunable laser sources. We present degradation studies of metal-organic vapor-phase epitaxy (MOVPE) grown, optically pumped, red-emitting AlGaInP-VECSELs with quantum wells (QWs) as active layers. Laser performance in continuous operation, pumped with a 532nm Nd:YAG laser and recorded over several hours, will be shown. Surface investigations of the gain structure via large-area photoluminescence maps show the possible consequences of optical pumping. A comparison of barrier-pumped performance data with the data of an in-well pumped VECSEL device is shown.
We present passive mode locking of a vertical external-cavity surface-emitting laser (VECSEL) in the red spectral range. The gain structure includes 20 compressively strained GaInP quantum wells (QWs), which are arranged in a resonant periodic gain design containing five packages of four quantum wells each. We use tensile strained AlGaInP barriers and cladding layers to compensate the strain introduced by the quantum wells. The semiconductor saturable absorber mirror (SESAM) includes two of the same quantum wells as used in the gain structure, positioned close to the surface. The semiconductor structure is grown by MOVPE in a near-resonant design and coated with a fused silica layer for an overall anti-resonant design. For tight focussing of the laser mode onto the absorber, we use a v-shaped cavity with an overall length of 179mm. Autocorrelation measurements show a FWHM pulse duration below 250 fs with side pulses arising due to the diamond heatspreader bonded onto the gain chip. The laser spectrum consists of a soliton-like part at 664.5 nm and a “continuum” which is also found in autocorrelation measurements perfomed in a Hanbury-Brown and Twiss type setup. An FFT based frequency analysis of the emitted pulse train shows a repetition rate of 836MHz. The SESAM charge carrier dynamics were investigated by pump-probe measurements. We observe a tri-exponential decay with a dominant fast decay time in the range of the pulse duration.
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