The present study reports the performance of a Dy3+, Tb3+:LiLuF4 yellow laser at 574 nm that could be efficiently operated in both continuous-wave (cw) and passive Q-switching modes. Using two blue InGaN-laser diodes as the pump source, a cw yellow laser was generated with an output power of 315 mW at the wavelength of 574 nm. The passively Q-switched pulse laser was obtained using Bi2Se3 and Bi2Te3 as saturable absorbers. The saturable absorbers prepared by the chemical vapor deposition method were characterized by Raman spectroscopy and atomic force microscope. The modulation depth and saturable intensity of saturable absorbers were explored by an irradiance-scan technique in a nanosecond regime. With 3.18 W of pump power absorbed, a pulsed output power of 45 mW was generated at 66.7 kHz of repetition frequency, with a minimum pulse width of 735 ns using Bi2Se3 as a saturable absorber. In the case of the Bi2Te3 saturable absorber, the shortest pulse duration of 828 ns is achieved at the pulse repetition frequency of 22.3 kHz, corresponding to the pulsed output power of 38 mW. The outcomes of the study suggest that Bi2Se3 and Bi2Te3 are potential nanomaterials for optoelectronic applications in the yellow regime.
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