We report on the continuous wave (CW) room temperature operation of epitaxially regrown monolithic GaSb-based photonic crystal surface emitting diode lasers (PCSEL) with λ ≈ 2 μm. The devices are based on laser heterostructure containing carrier stopper layer designed to inhibit electron leakage into buried photonic-crystal section. Atomic hydrogen cleaning of the nanopatterned surface followed by optimized epitaxial step resulted in highly uniform airpocket-retaining regrowth. The increase of the number of air-pockets in unit cells of the buried photonic crystal layer led to enhancement of the PCSEL output power and improvement of the far field pattern The PCSELs with buried high-index-contrast photonic crystal utilizing four air-pockets per unit cell generated 30 mW of continuous wave power from 200 μm diameter aperture.
Photonic crystal surface emitting lasers emitting up to 2.6 µm have been designed and fabricated. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructure by air-hole-retaining epitaxial regrowth. Transmission electron microscopy studies demonstrated uniform and continuous regrowth of the nano-patterned GaSb surface with AlGaAsSb alloy until air-pockets start being formed. The photonic crystal surface emitting lasers based on diode laser and cascade diode laser heterostructures generated narrow spectrum low divergence beams with mW-level output power. The angle-resolved electroluminescence analysis demonstrated well resolved photonic subbands corresponding to Γ2 point of square lattice and photonic gaps of several meV.
We report on development of the mid-infrared antimonide based laser technology targeting dual wavelength operation for intra-cavity difference frequency generation. The devices utilize Y-branch architecture with high order DBR reflectors controlling the laser emission spectrum. The device active region contain asymmetric tunnel coupled quantum well with built in resonant second order nonlinearity. The epitaxially regrown photonic crystal surface emitting GaSb-based lasers will be demonstrated.
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