Glass-to-silicon anodic bonding is a well known process for fabricating number of microelectromechanical components and subassemblies. Experiments have been carried out by varying bonding parameters, i.e. temperature and bias voltage, to get strong bond between silicon and 7740 pyrex glass pieces. Bias voltage in the range of 400 - 450 V at 420 degree(s)C appears to be appropriate for quality bonds between silicon and glass.
Potassium hydroxide, water and isopropanol based etchants have been used to etch silicon anisotropically for fabricating microelectromechanical components and structures for various applications. For etching V and U grooves, <100> and <110> orientation silicon wafer are used. Proper orientation of the pattern to be etched is needed to be aligned with reference to the standard flat provided in the commercial wafer. A method has been developed, where proper orientation is experimentally determined on the given wafer for pattern delineation. Very smooth walls and bottom of the trenches have been obtained after controlling the etchant composition, temperature and orientation of the masking pattern. Process details are presented with experimental results.
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