CONFERENCE PROCEEDINGS
Advanced Search
Shiying Xiong
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 16 July 2002 Paper
Gate line edge roughness effects in 50-nm bulk MOSFET devices
Shiying Xiong, Jeffrey Bokor, Qi Xiang, Philip Fisher, Ian Dudley, Paula Rao
Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473517
KEYWORDS: Line edge roughness, Critical dimension metrology, Diffusion, 3D modeling, Semiconducting wafers, Field effect transistors, Doping, Scanning electron microscopy, Spatial frequencies, Device simulation
SIGN IN TO:
  • View contact details
UPDATE YOUR PROFILE
Is this your profile? Update it now.
Sign into your SPIE.org account
Don’t have a profile and want one?
Create an account on SPIE.org
Advertisement
Advertisement
Back to Top