We demonstrate two highly coherent tunable high power laser concepts, based on a III-V semiconductor VECSEL technology, operating in the 1μm wavelength range. We report experimentally and theoretically the existence of deterministic dynamics of a coherent semiconductor laser field, with a route to robust single-frequency operation exhibiting broad nonlinear frequency pulling far above the thermally-assisted conventional tuning range. Thanks to a complementary design, we demonstrate an inhibited laser state exhibiting high power, high spatial and temporal coherence under ultralow light matter interaction, overcoming fundamental and technical limitations of common on the shelf laser technology, like quantum, electronic and thermal noise, as well as thermal lensing induced wave aberration.
THz photonics-based sources are attractive as they offer room-temperature solutions that rely on mature photonics technology and provide broadband tunability and large modulation bandwidth to address specific THz applications such as high-data-rate communications or spectroscopy. We will present an overview of our recent results on coherent and structured light emitted from III-V semiconductor lasers and we will focus on THz generation based on these original near-infrared lasers operating at 1064 nm. Vertical external-cavity surface-emitting lasers that exploit parity symmetry breaking together with integrated meta-surfaces can generate unconventional light states such as vortex light, spatially modeless laser, transverse multiplexing, non-linear structured light... Coherent THz emission has been obtained from a dual-mode laser, that operates simultaneously on two Laguerre-Gauss transverse modes, using either uni-traveling-carrier photodiodes and plasmonic photo-conductive antennas. We will discuss the ongoing work towards multiplex structured coherent photonic sources that offer high potential for powerful THz emission.
In this paper, III-IV semiconductors are demonstrated as strong candidates for plasmonics applications in the Mid-IR. The perfect absorbers (PA) fabricated with heavily doped semiconductors features strong coupling between Fabry-Perot and localized surface plasmon modes. Also, anisotropic nano-antenna fabricated at the top surface yield a huge anisotropy to the polarized light. The fabricated PA with 2D periodic arrays of rectangular nano-antenna is presented, where the rectangular shape allows one to excite localized surface plasmon resonances (LSPR) at different wavenumbers depending on the polarization of the incident light. Preliminary results of the bio-functionalization through phosphonic acid are shown for the PA aditionnally. Furthermore, it becomes clear that it is possible to detect bio-molecules of interest even far in the infrared on a very small surface and with a few hundreds of nano-antenna.
In this work, we demonstrate that it is possible to use III-V semiconductors for plasmonics from the THz up to the midinfrared spectral range. We have fabricated hyperbolic nano-antenna based on heavily doped semiconductors demonstrating localized plasmon modes. This hyperbolic nano-antenna is 10 times: 10 nm doped InAs / 10 nm undoped GaSb. The free carriers are confined in the 10 nm layer of InAs. The confinement shifts the effective plasma frequency of the metamaterial towards the high frequencies, extending the possibility to probe molecules until 2000 cm-1 , thus covering the complete fingerprint frequency range for molecular and biosensing applications. The nano-structuration of the hyperbolic material allows to access two main plasmonic resonances at 800 cm-1 and 2000 cm-1 . This bimodal property is appealing to detect and identify biomolecules over a large spectral range. With these hyperbolic nanoantennas, we can either enhance the absorption of rovibrational modes of molecules with surface-enhanced infrared absorption (SEIRA) spectroscopy1 or enhance the thermal emission of molecules with surface-enhanced thermal emission spectroscopy (SETES)2
The use of photo-mixing techniques for THz emission offers attractive performances such as tunability and modulation bandwidth, that are suitable for bio-medical sensing and imaging, communications, or security. We will present the state-of-the-art performances of a vertical-external-cavity surface-emitting laser that operates on two transverse modes to ensure a stable continuous-wave and coherent (longitudinal, transverse and polarization) dual-frequency operation. THz emission is subsequently obtained by excitation of an uni-traveling-carrier photodiode (UTC-PD). The stability of the dual-frequency operation is achieved thanks to different types of functionalized surfaces involving the micro-fabrication of integrated III-V absorbing metallic masks or metamaterial phase masks by e-beam lithography. These functionalized surfaces allow to shape the optical and THz performances in terms of power, tunability and coherence. The latter will be specifically detailed in terms of longitudinal coherence, showing a THz frequency noise that is orders of magnitude lower than the optical one thanks to a significant correlation of technical noise. Tunable emission will be demonstrated from 50 GHz up to few THz with a linewidth of 150 kHz (during 3-ms), for a power of 1 W at 260 GHz that is limited by the UTC-PD for an optical excitation at 1064 nm at room temperature. We will discuss on the possibility to improve such a power significantly by taking advantage of the involved high-order transverse mode, offering possible intrinsically coherent networks of photo-emitters, thus paving the way to compact and agile coherent THz sources offering an output power over few mWs at frequencies of 100s of GHz.
The use of photo-mixing techniques for THz emission offers attractive performances such as tunability and modulation bandwidth, that are suitable for bio-medical sensing and imaging, communications, or security. We will present the state-of-the-art performances of a vertical-external-cavity surface-emitting laser that operates on two transverse modes to ensure a stable continuous-wave and coherent (longitudinal, transverse and polarization) dual-frequency operation. THz emission is subsequently obtained by excitation of an uni-traveling-carrier photodiode (UTC-PD). The stability of the dual-frequency operation is achieved thanks to different types of functionalized surfaces involving the micro-fabrication of integrated III-V absorbing metallic masks or metamaterial phase masks by e-beam lithography. These functionalized surfaces allow to shape the optical and THz performances in terms of power, tunability and coherence. The latter will be specifically detailed in terms of longitudinal coherence, showing a THz frequency noise that is orders of magnitude lower than the optical one thanks to a significant correlation of technical noise. Tunable emission will be demonstrated from 50 GHz up to few THz with a linewidth of 150 kHz (during 3-ms), for a power of 1 W at 260 GHz that is limited by the UTC-PD for an optical excitation at 1064 nm at room temperature. We will discuss on the possibility to improve such a power significantly by taking advantage of the involved high-order transverse mode, offering possible intrinsically coherent networks of photo-emitters, thus paving the way to compact and agile coherent THz sources offering an output power over few mWs at frequencies of 100s of GHz.
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