Magnetic-fluorescent nanoparticles have been emerging as potential bimodal probes in the area of bioimaging. However,
near-infrared (NIR) fluorescent dye as a fluorescent material for bimodal probe remains unexplored. The tailor-design of
NIR cyanine dye is challenging. Herein, we report the synthesis and characterization of novel functional IR 820 dye.
This modified IR 820 has been successfully conjugated with long and short back-bone chain polymers. All these compounds preserve good water solubility and photochemical properties. The magnetic-fluorescent bimodal probe has been demonstrated, wherein the magnetic nanoparticles have been coated with dye-polymer. The cytotoxicity studies on HeLa cells show that MNP@dye-polymer with short back-bone chain has better cell viability.
Due to lack of suitable lattice matched substrates, III-Nitride materials are usually grown on sapphire, SiC, and silicon. The heteroepitaxy of GaN on these substrates often incorporates a high density of dislocation and point defects due to lattice and thermal mismatch. It is desirable to reduce the defect density in III-Nitrides in order to fabricate longer lifetime and high brightness light emitting diodes, lasers, and high-electron mobility transistors. In this context, nano-scale epitaxy on patterned Si substrates allows lateral growth, which eventually leads to a reduction of defect density and strain in the overgrown GaN films. Large area nano-patterning with dielectric masks would also be useful to fabricate highly-ordered and dense nitride nanostructures by selective area homo- and hetero-epitaxy.
KEYWORDS: Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Gallium, Spatial resolution, Gallium nitride, Near field optics, Quantum dots, Near field, Spatial light modulators
Nanoluminescence spectroscopy and imaging techniques are becoming popular to investigate optical properties of semiconductor nanomaterials. Conventional micro-photoluminescence (PL) techniques are affected by diffraction phenomenon, which limits the lateral resolution to approximately 0.6 μm and thus, they cannot provide information of luminescence features with dimension below the classical diffraction limit. This limitation can be overcome by near-field scanning optical microscopy (NSOM) where it is possible to achieve spatial resolution of the order of 50 - 100 nm. InGaN based material has attracted great interest since it plays a key role in the group III-Nitride optoelectronic devices, such as high-brightness blue/green light emitting diodes and laser diodes. In order to retrieve information on the spatial inhomogeneities of the emission patterns in InGaN based materials, we have carried out NSOM-PL measurements on InGaN/GaN multi-quantum wells (MQWs) and InGaN quantum dots (QDs) grown by metal organic chemical vapor deposition (MOCVD). The near-field PL intensity from these samples is found to be spatially inhomogeneous on a sub-micron scale. In the NSOM-PL intensity images, bright island-like features are observed. After deconvolution with the spatial resolution of the NSOM, the size of these features is estimated to be in the range of 100 to 200 nm. The spatially resolved improved optical emission from these InGaN/GaN quantum structures is associated with strain-induced clusters formed at the interface of the multi-layers.
Continuous GaN films were grown on the top of cracked Si- doped n+-GaN epilayers by MOCVD techniques. Raman- scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using x-ray diffraction analysis was as low as 0.036 GPA for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films.
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