Mr. Sungjin Kim Profile

Sungjin Kim

Engineer at Hynix Semiconductor Inc

SPIE Involvement:

Author

OPC Engineer (MEMORY)

Proceedings Article | 18 March 2015 Paper

Model-based HSF using by target point control function

Seongjin Kim, Munhoe Do, Yongbae An, Jaeseung Choi, Hyunjo Yang, Donggyu Yim

Proceedings Volume 9426, 94261X (2015) https://doi.org/10.1117/12.2085453

KEYWORDS: Optical proximity correction, Lithography, Optical lithography, Photomasks, Model-based design, Resolution enhancement technologies, Semiconducting wafers, Logic devices, Current controlled current source, Logic

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Proceedings Article | 16 April 2011 Paper

Patterning process study for 30nm hole

Kilyoung Lee, Cheolkyu Bok, Jaeheon Kim, Byounghoon Lee, Jongsik Bang, Hyunkyung Shim, Sungjin Kim, James Moon, Donggyu Yim, Sung-Ki Park

Proceedings Volume 7972, 79720P (2011) https://doi.org/10.1117/12.880906

KEYWORDS: Optical lithography, Photomasks, Critical dimension metrology, Nanoimprint lithography, Chromium, Etching, Double patterning technology, Scanners, Image processing, Photoresist developing

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Proceedings Article | 2 April 2010 Paper

Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping field CDU on advanced production devices

Dae Jong Kim, Hyung Won Yoo, Chul Hong Kim, Hak Kwon Lee, Sung Su Kim, Koon Ho Bae, Hedvi Spielberg, Yun Ho Lee, Shimon Levi, Yariv Bustan, Moshe Rozentsvige

Proceedings Volume 7638, 76380B (2010) https://doi.org/10.1117/12.848699

KEYWORDS: Semiconducting wafers, Polarization, Line edge roughness, Critical dimension metrology, Wafer inspection, Process control, Metrology, Photomasks, Light scattering, Semiconductors

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As design rules shrink, Critical Dimension Uniformity (CDU) and Line Edge Roughness (LER) have a dramatic effect on printed final lines and hence the need to control these parameters increases. Sources of CDU and LER variations include scanner auto-focus accuracy and stability, layer stack thickness, composition variations, and exposure variations. Process variations, in advanced VLSI production designs, specifically in memory devices, attributed to CDU and LER affect cell-to-cell parametric variations. These variations significantly impact device performance and die yield. Traditionally, measurements of LER are performed by CD-SEM or OCD metrology tools. Typically, these measurements require a relatively long time to set and cover only selected points of wafer area. In this paper we present the results of a collaborative work of the Process Diagnostic & Control Business Unit of Applied Materials and Hynix Semiconductor Inc. on the implementation of a complementary method to the CDSEM and OCD tools, to monitor defect density and post litho develop CDU and LER on production wafers. The method, referred to as Process Variation Monitoring (PVM) is based on measuring variations in the scattered light from periodic structures. The application is demonstrated using Applied Materials DUV bright field (BF) wafer inspection tool under optimized illumination and collection conditions. The UVision^TM has already passed a successful feasibility study on DRAM products with 66nm and 54nm design rules. The tool has shown high sensitivity to variations across an FEM wafer in both exposure and focus axes. In this article we show how PVM can help detection of Field to Field variations on DRAM wafers with 44nm design rule during normal production run. The complex die layout and the shrink in cell dimensions require high sensitivity to local variations within Dies or Fields. During normal scan of production wafers local Process variations are translated into GL (Grey Level) values, that later are grouped together to generate Process Variation Map and Field stack throughout the entire wafer.

Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 24 March 2006 Paper

The effect of transmission reduction by reticle haze formation

Sung-Jin Kim, Jai-Sun Kyoung, Jin-Back Park, Young-Hoon Kim, Seung-Wook Park, Il-Sin An, Hye-Keun Oh

Proceedings Volume 6152, 61524B (2006) https://doi.org/10.1117/12.656284

KEYWORDS: Air contamination, Photomasks, Transmittance, Critical dimension metrology, Spectroscopic ellipsometry, Ellipsometry, Reticles, Phase shifts, Binary data, Lithography

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Proceedings Article | 9 November 2005 Paper

Reticle haze measurement by spectroscopic elipsometry

Young-Hoon Kim, Seong-Jin Kim, Jin-Back Park, Mi-Lim Jung, Sung-Hyuck Kim, Seung-Wook Park, Jai-Sun Kyoung, Il-Sin An, Hye-Keun Oh

Proceedings Volume 5992, 59924L (2005) https://doi.org/10.1117/12.632375

KEYWORDS: Air contamination, Reticles, Photomasks, Ellipsometry, Transmittance, Inspection, Spectroscopic ellipsometry, Spectroscopy, Semiconductors, Atomic force microscopy

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