Dr. Sven Einfeldt Profile

Dr. Sven Einfeldt

Research Scientist at Ferdinand-Braun-Institut gGmbH

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 13 March 2024 Presentation

Presentation

Prospects of far-UVC LED technology

Michael Kneissl, Giulia Cardinali, Martin Guttmann, Anton Muhin, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Hyun-Kyong Cho, Johannes Glaab, Tim Kolbe, Jan Ruschel, Sylvia Hagedorn, Neysha Lobo-Ploch, Carsten Netzel, Jens Rass, Sven Einfeldt, Markus Weyers

Proceedings Volume PC12906, PC1290609 (2024) https://doi.org/10.1117/12.3014216

KEYWORDS: Light emitting diodes, External quantum efficiency, Quantum light, Quantum efficiency, Ultraviolet radiation, Skin, Quantum technology applications, Quantum emitters, Pathogens, Dielectric polarization

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Proceedings Article | 13 March 2024 Paper

Paper

Defects, performance, and reliability in UVC LEDs

Matteo Meneghini, Nicola Roccato, Francesco Piva, Marco Pilati, Carlo De Santi, Matteo Buffolo, Norman Susilo, David Hauer Vidal, Anton Muhin, Luca Sulmoni, Jan Ruschel, Johannes Glaab, Jens Rass, Sven Einfeldt, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings Volume 12906, 129060C (2024) https://doi.org/10.1117/12.3001050

KEYWORDS: Light emitting diodes, Reliability, Magnesium, Simulations, Quantum devices, Ultraviolet light emitting diodes, TCAD, Electrons, Doping, Optics manufacturing

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Proceedings Article | 9 March 2024 Presentation

Presentation

Spatially resolved effects in UV LEDs with relevance for device performance and reliability

Jan Ruschel, Tim Kolbe, Jens Tomm, Johannes Glaab, Marcel Schilling, Sylvia Hagedorn, Jens Rass, Hyun Cho, Christoph Stölmacker, Martin Guttmann, Tim Wernicke, Markus Weyers, Michael Kneissl, Sven Einfeldt

Proceedings Volume PC12886, PC1288615 (2024) https://doi.org/10.1117/12.3002498

KEYWORDS: Ultraviolet light emitting diodes, Reliability, Light emitting diodes, Ultraviolet radiation, UV optics, Phototherapy, Lamps, Emission wavelengths, Design and modelling, Cameras

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Proceedings Article | 21 March 2023 Presentation

Presentation

Exploring the efficiency limits of AlGaN multi-quantum well deep UV-LEDs

Michael Kneissl, Giulia Cardinali, Martin Guttmann, Anton Muhin, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Hyun Kyong Cho, Johannes Glaab, Arne Knauer, Tim Kolbe, Jan Ruschel, Sylvia Hagedorn, Neysha Lobo-Ploch, Carsten Netzel, Jens Rass, Sven Einfeldt, Markus Weyers

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2651983

KEYWORDS: Light emitting diodes, External quantum efficiency, Skin, Sapphire, Deep ultraviolet, Aluminum nitride, Viruses, Ultraviolet light emitting diodes, Toxic gases, Polarization

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Proceedings Article | 21 March 2023 Presentation

Presentation

Advances in far-UVC LEDs and irradiation systems for medicine and sensing

Sven Einfeldt, Jan Ruschel, Hyun Kyong Cho, Jens Rass, Martin Guttmann, Thomas Filler, Marcel Schilling, Tim Kolbe, Arne Knauer, Sylvia Hagedorn, Luca Sulmoni, Heiko Gundlach, Christoph Stoelmacker, Steffen Knigge, Johannes Glaab, Tim Wernicke, Lucas Wittenbecher, Neysha Lobo Ploch, Markus Weyers, Olaf Krueger, Ulrike Woggon, Axel Kramer, Martina Meinke, Michael Kneissl

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648706

KEYWORDS: Light emitting diodes, Sensing systems, Medicine, Ultraviolet light emitting diodes, Skin, Semiconductors, Pollution detection, Pathogens, Packaging, Oxides

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Proceedings Article | 15 March 2023 Presentation + Paper

Presentation + Paper

Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

Jens Tomm, Jan Ruschel, Hyun Kyong Cho, Sven Einfeldt

Proceedings Volume 12440, 1244008 (2023) https://doi.org/10.1117/12.2646579

KEYWORDS: Quantum wells, Inhomogeneities, Semiconductor lasers, Quantum well light emitters, Photoluminescence, Modeling, Luminescence

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Proceedings Article | 9 March 2022 Presentation

Presentation

Development of far-UVC LEDs and their application in irradiation systems for antisepsis and sensing

Neysha Lobo Ploch, Hyun Kyong Cho, Thomas Filler, Johannes Glaab, Heiko Gundlach, Martin Guttmann, Sylvia Hagedorn, Frank Mehnke, Jens Rass, Jan Ruschel, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Lucas Wittenbecher, Ulrike Woggon, Axel Kramer, Martina Meinke, Michael Kneissl, Markus Weyers, Ulrike Winterwerber, Sven Einfeldt

Proceedings Volume PC12022, PC120220D (2022) https://doi.org/10.1117/12.2607275

KEYWORDS: Light emitting diodes, Skin, Sensing systems, Pathogens, Metals, Packaging, Optical filters, Gases

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Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

Lukas Uhlig, Conny Becht, Erik Freier, Ji Hye Kang, Veit Hoffmann, Christoph Stölmacker, Sven Einfeldt, Ulrich Schwarz

Proceedings Volume 12001, 1200106 (2022) https://doi.org/10.1117/12.2609394

KEYWORDS: Semiconductor lasers, Electroluminescence, Quantum wells, Hydrogen, Cladding, Gallium nitride, Indium gallium nitride, Reliability

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Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

UV LED reliability: degradation mechanisms and challenges

Matteo Meneghini, Francesco Piva, Carlo De Santi, Nicola Trivellin, Matteo Buffolo, Nicola Roccato, Riccardo Brescancin, Massimo Grigoletto, Davide Fiorimonte, Sven Einfeldt, Johannes Glaab, Jan Ruschel, Norman Susilo, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings Volume 12001, 120010B (2022) https://doi.org/10.1117/12.2606858

KEYWORDS: Light emitting diodes, Ultraviolet light emitting diodes, Magnesium, Reliability, Ionization, Quantum wells, Gallium, Electron beam lithography, Ultraviolet radiation, Semiconductors

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Proceedings Article | 5 March 2021 Presentation

Presentation

AlGaN-based deep UV LEDs: applications and challenges

Michael Kneissl, Giulia Cardinali, Johannes Enslin, Christian Kuhn, Martin Guttmann, Frank Mehnke, Luca Sulmoni, Norman Susilo, Tim Wernicke, Hyun Kyong Cho, Johannes Glaab, Jan Ruschel, Sylvia Hagedorn, Neyhsa Lobo-Ploch, Carsten Netzel, Jens Rass, Sven Einfeldt, Markus Weyers

Proceedings Volume 11686, 116860Y (2021) https://doi.org/10.1117/12.2584960

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Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities

Jens Tomm, Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, Sven Einfeldt

Proceedings Volume 11705, 117050E (2021) https://doi.org/10.1117/12.2578049

KEYWORDS: Quantum wells, Surgery, Ultraviolet radiation, Reliability, Picosecond phenomena, Luminescence, Laser applications, Data storage

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Proceedings Article | 14 March 2018 Presentation

Presentation

From heterostructure design to package: development of efficient and reliable UVB LEDs (Conference Presentation)

Neysha Lobo Ploch, Tim Kolbe, Arne Knauer, Jens Rass, Hyun Kyong Cho, Johannes Glaab, Jan Ruschel, Anna Andrle, Sylvia Hagedorn, Katrin Hilbrich, Christoph Stoelmacker, Steffen Knigge, Maria Reiner, Ina Ostermay, Andreas Thies, Deepak Prasai, Olaf Krueger, Sven Einfeldt, Markus Weyers, Michael Kneissl

Proceedings Volume 10532, 1053220 (2018) https://doi.org/10.1117/12.2287131

KEYWORDS: Light emitting diodes, Heterojunctions, Electron beam lithography, Ultraviolet radiation, Packaging, Ultraviolet light emitting diodes, Mercury, Lamps, Phototherapy, Vapor phase epitaxy

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Proceedings Article | 19 February 2018 Paper

Paper

10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings

J. H. Kang, H. Wenzel, V. Hoffmann, E. Freier, L. Sulmoni, R.-S. Unger, S. Einfeldt, T. Wernicke, M. Kneissl

Proceedings Volume 10553, 105530A (2018) https://doi.org/10.1117/12.2289929

KEYWORDS: Distributed feedback laser diodes, Etching, Lithography, Plasma etching, Gallium, Reflectivity, Semiconductor lasers

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Proceedings Article | 15 February 2018 Paper

Paper

Thermocompression bonding for high-power-UV LEDs

Indira Kaepplinger, Dominik Karolewski, Geert Brockmann, Thomas Ortlepp, Olaf Brodersen, Andreas Thies, Jens Rass, Sven Einfeldt, Neysha Lobo-Ploch, Christoph Stoelmacker, Frank Schnieder

Proceedings Volume 10554, 105541B (2018) https://doi.org/10.1117/12.2287720

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Copper, Metals

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Proceedings Article | 15 February 2018 Paper

Paper

Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

D. Monti, M. Meneghini, C. De Santi, S. Da Ruos, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl

Proceedings Volume 10554, 1055410 (2018) https://doi.org/10.1117/12.2292202

KEYWORDS: Quantum wells, Light emitting diodes, Diffusion, Electroluminescence, Gallium nitride

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Proceedings Article | 16 February 2017 Paper

Paper

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl

Proceedings Volume 10124, 101240T (2017) https://doi.org/10.1117/12.2253843

KEYWORDS: Light emitting diodes, Deep ultraviolet, Optical spectroscopy, Ultraviolet sources, Nitrogen, Internal quantum efficiency, Electro optics, Spectroscopes, UV optics, Magnesium, Quantum wells, Spectroscopy, Statistical analysis, Quantum efficiency, Electroluminescence

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Proceedings Article | 26 February 2016 Paper

Paper

Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs

Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stölmacker, Viola Kueller, Arne Knauer, Sven Einfeldt, Markus Weyers, Michael Kneissl

Proceedings Volume 9748, 97481O (2016) https://doi.org/10.1117/12.2208906

KEYWORDS: Light emitting diodes, Ultraviolet light emitting diodes, Heterojunctions, Ultraviolet radiation, Vapor phase epitaxy, Quantum wells, Luminescence, Aluminum nitride, Magnesium, Diffusion, Electro optics, Chemical species

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Proceedings Article | 13 March 2015 Paper

Paper

High-power UV-B LEDs with long lifetime

Jens Rass, Tim Kolbe, Neysha Lobo-Ploch, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Martin Guttmann, Christoph Reich, Anna Mogilatenko, Johannes Glaab, Christoph Stoelmacker, Mickael Lapeyrade, Sven Einfeldt, Markus Weyers, Michael Kneissl

Proceedings Volume 9363, 93631K (2015) https://doi.org/10.1117/12.2077426

KEYWORDS: Light emitting diodes, Electron beam lithography, Aluminum nitride, Aluminum, Polarization, Luminescence, Sapphire, External quantum efficiency, Quantum wells, Ultraviolet radiation

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Proceedings Article | 13 March 2015 Paper

Paper

Current spreading in UV-C LEDs emitting at 235 nm

Mickael Lapeyrade, Florian Eberspach, Johannes Glaab, Neysha Lobo-Ploch, Christoph Reich, Christian Kuhn, Martin Guttmann, Tim Wernicke, Frank Mehnke, Sven Einfeldt, Arne Knauer, Markus Weyers, Michael Kneissl

Proceedings Volume 9363, 93631P (2015) https://doi.org/10.1117/12.2076349

KEYWORDS: Light emitting diodes, Resistance, Epitaxial lateral overgrowth, Aluminum, Sapphire, Electroluminescence, Temperature metrology, Semiconducting wafers, Ultraviolet radiation, Metals

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Proceedings Article | 28 February 2012 Paper

Paper

Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes

L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Yu. Flores, S. Einfeldt, M. Kneissl, G. Tränkle

Proceedings Volume 8262, 826219 (2012) https://doi.org/10.1117/12.908368

KEYWORDS: Semiconductor lasers, Laser damage threshold, Waveguides, Etching, Indium gallium nitride, Quantum wells, Electron beam lithography, Diodes, Gallium nitride, Semiconducting wafers

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Proceedings Article | 4 March 2011 Paper

Paper

Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes

Tim Kolbe, Arne Knauer, Joachim Stellmach, Chris Chua, Zhihong Yang, Sven Einfeldt, Patrick Vogt, Noble Johnson, Markus Weyers, Michael Kneissl

Proceedings Volume 7939, 79391G (2011) https://doi.org/10.1117/12.876132

KEYWORDS: Light emitting diodes, Polarization, Quantum wells, Indium gallium nitride, Aluminum, Ultraviolet light emitting diodes, Electroluminescence, Gallium nitride, Heterojunctions, Crystals

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Proceedings Article | 24 February 2009 Paper

Paper

Assessment of the limits to peak power of 1100nm broad area single emitter diode lasers under short pulse conditions

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, G. Tränkle

Proceedings Volume 7198, 71981G (2009) https://doi.org/10.1117/12.808411

KEYWORDS: Semiconductor lasers, Waveguides, Quantum wells, Pulsed laser operation, High power lasers, Reliability, Gallium arsenide, High power diode lasers, Inductance

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Proceedings Article | 24 February 2009 Paper

Paper

20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96um

P. Crump, G. Blume, K. Paschke, R. Staske, A. Pietrzak, U. Zeimer, S. Einfeldt, A. Ginolas, F. Bugge, K. Häusler, P. Ressel, H. Wenzel, G. Erbert

Proceedings Volume 7198, 719814 (2009) https://doi.org/10.1117/12.807263

KEYWORDS: Continuous wave operation, Semiconductor lasers, Temperature metrology, Quantum wells, Waveguides, Broad area laser diodes, Resistance, Reliability, Fiber lasers

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Proceedings Article | 3 February 2009 Paper

Paper

MOVPE growth for UV-LEDs

Arne Knauer, Frank Brunner, Tim Kolbe, Viola Küller, Hernan Rodriguez, Sven Einfeldt, Markus Weyers, Michael Kneissl

Proceedings Volume 7231, 72310G (2009) https://doi.org/10.1117/12.816927

KEYWORDS: Light emitting diodes, Gallium nitride, Aluminum nitride, Quantum wells, Semiconducting wafers, Aluminum, Superlattices, Ultraviolet radiation, Sapphire, Heterojunctions

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Proceedings Article | 28 September 2007 Paper

Paper

Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, M. Kneissl

Proceedings Volume 6797, 67970X (2007) https://doi.org/10.1117/12.774648

KEYWORDS: Light emitting diodes, Gallium nitride, Indium, Aluminum, Gallium, Quantum wells, Indium gallium nitride, Ultraviolet light emitting diodes, External quantum efficiency, Near ultraviolet

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Proceedings Article | 7 February 2007 Paper

Paper

High-power, high-brightness 100W QCW diode laser at 940nm

C. Fiebig, G. Erbert, W. Pittroff, H. Wenzel, A. Maaßdorf, S. Einfeldt, G. Tränkle

Proceedings Volume 6456, 64560K (2007) https://doi.org/10.1117/12.699966

KEYWORDS: Semiconductor lasers, Waveguides, High power lasers, Cladding, Pulsed laser operation, Reliability, Resonators, Laser damage threshold, Laser resonators, Quasi continuous wave operation

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Proceedings Article | 7 February 2007 Paper

Paper

10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry

K. Paschke, S. Einfeldt, Chr. Fiebig, A. Ginolas, K. Häusler, P. Ressel, B. Sumpf, G. Erbert

Proceedings Volume 6456, 64560H (2007) https://doi.org/10.1117/12.699901

KEYWORDS: Near field, Semiconductor lasers, Near field optics, High power lasers, Reliability, Waveguides, Modulation, Resistance, Control systems, Surgery

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Proceedings Article | 10 December 2001 Paper

Paper

Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert, Alexander Kasic, Stephan Figge, Marc Diesselberg, Sven Einfeldt, Detlef Hommel, Ulrich Koehler, Donat As, Juergen Off, Bertram Kuhn, Ferdinand Scholz, John Woollam, Craig Herzinger

Proceedings Volume 4449, (2001) https://doi.org/10.1117/12.450109

KEYWORDS: Gallium nitride, Phonons, Light emitting diodes, Infrared spectroscopy, Stereolithography, Infrared radiation, Gallium, Heterojunctions, Data modeling, Crystals

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Showing 5 of 28 publications

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