Strong resolution enhancement technologies (RETs) combined with hyper-NA
ArF immersion lithography with source and mask optimization (SMO) have become
necessary to achieve sufficient resolution in 2Xnm node devices. Conventional SMO
methods have focused on minimizing the edge placement error and/or the cost functions
of dose, focus, and mask errors. This has not, however, resolved the conflict between line
and gap patterns on logic gate layouts. One issue remaining in particular is the mask error
enhancement factor (MEEF). Furthermore, the pattern shapes at the line end gaps of
SRAM gates remain a major challenge for logic device manufacturers. To overcome
these problems, we explain the importance of controlling the light intensity profiles at
line end gaps, focusing on a Panasonic product called "Mask Enhancer" that comprises
an attenuated mask with a phase shifting aperture and enables light intensity profiles to be
controlled easily. We demonstrate the product's effectiveness in printing gates with
optimized illumination source shapes. A simulation experiment and a feasibility study
confirmed that Mask Enhancer can improve the MEEF and pattern shapes at the line ends
of SRAM gates.
We have proposed a new resolution enhancement technology using attenuated
mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact
hole pattern printing. In this study, we apply Mask Enhancer on sub-100nm pitch contact
hole printing with 1.35NA ArF immersion lithography tool, and ensure that Mask
Enhancer can improve MEEF at resolution limit and DOF at semi-dense and isolated
pitch region. We demonstrate printing a fine 100nm pitch line of contacts and isolated
simultaneously with MEEF of less than 4 by using Mask Enhancer and prove that Mask
Enhancer is one of the most effective solutions for random logic layout contact hole
fabrication for 28nm node and below.
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