Mr. Takashi Mizoguchi Profile

Takashi Mizoguchi

at Tekscend Photomask US Inc

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Author

Publications (10)

Proceedings Article | 14 October 2011 Paper

High resolution mask process and substrate for 20nm and early 14nm node lithography

Tom Faure, Satoshi Akutagawa, Karen Badger, Louis Kindt, Jun Kotani, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Shinich Igarashi, Yukio Inazuki, Kazuhiro Nishikawa, Hiroki Yoshikawa

Proceedings Volume 8166, 816617 (2011) https://doi.org/10.1117/12.898889

KEYWORDS: Photomasks, SRAF, Opacity, Inspection, Chromium, Etching, Optical proximity correction, Photoresist processing, Resistance, Lithography

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The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techniques that are needed to maximize the lithographic process window at 20 nm and 14 nm groundrules has increased the need for sub-resolution assist features (SRAFs) down to 50 nm on the mask. In addition, the recent industry trend of migrating to use of negative tone develop and other tone inversion techniques on wafer in order to use bright field masks with better lithography process window is requiring mask makers to reduce the minimum feature size of opaque features on the reticle such as opaque SRAFs. Due to e-beam write time and pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the resolution of their negative tone chemically amplified resist (NCAR) process. In this paper we will describe the development and characterization of a high resolution bright field mask process that is suitable for meeting 20 nm and early 14 nm optical lithography requirements. Work to develop and optimize use of an improved chrome hard mask material on the thin OMOG binary mask blank¹ in order to resolve smaller feature sizes on the mask will be described. The improved dry etching characteristics of the new chrome hard mask material enabled the use of a very thin (down to 65 nm) NCAR resist. A comparison of the minimum feature size, linearity, and through pitch performance of different NCAR resist thicknesses will also be described. It was found that the combination of the improved mask blank and thinner NCAR could allow achievement of 50 nm opaque SRAFs on the final mask.. In addition, comparisons of the minimum feature size performance of different NCAR resist materials will be shown. A description of the optimized cleaning processes and cleaning durability of the 50 nm opaque SRAFs will be provided. Furthermore, the defect inspection results of the new high resolution mask process and substrate will be shared.

Proceedings Article | 25 September 2010 Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

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Proceedings Article | 25 May 2010 Paper

Evaluation of easily removable pellicle adhesive

Nancy Zhou, Monica Barrett, Robert Nolan, Dennis Plouffe, Jason Ritter, Alfred Wagner, Michael Caterer, Takashi Mizoguchi, Satoshi Akutagawa, Kevin Duong, Corbin Imai, C. Wang

Proceedings Volume 7748, 774810 (2010) https://doi.org/10.1117/12.865042

KEYWORDS: Adhesives, Pellicles, Photomasks, Distortion, Quartz, Manufacturing, Inspection, Fermium, Frequency modulation, Lithography

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Proceedings Article | 25 May 2010 Paper

The relationship between mounting pressure and time on final photomask flatness

Takashi Mizoguchi, Monica Barrett, Satoshi Akutagawa, Michael Caterer, Robert Nolan, Dennis Plouffe, Nancy Zhou

Proceedings Volume 7748, 77480C (2010) https://doi.org/10.1117/12.865005

KEYWORDS: Pellicles, Photomasks, Adhesives, Chromium, Distortion, Current controlled current source, Glasses, Interferometers, Helium neon lasers

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Proceedings Article | 11 May 2009 Paper

Effect of pellicle frame and adhesive material on final photomask flatness

Nancy Zhou, Ken Racette, David Hasselbeck, Monica Barrett, Robert Nolan, Michael Caterer, Takashi Mizoguchi, Satoshi Akutagawa, Glenn Dickey, Toru Shirasaki

Proceedings Volume 7379, 737909 (2009) https://doi.org/10.1117/12.824250

KEYWORDS: Pellicles, Adhesives, Aluminum, Photomasks, Polymers, Distortion, Manufacturing, Optical lithography, Switching, Cobalt

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Proceedings Article | 11 May 2009 Paper

Evaluation of the flatness effects of mask backing and orientation during photomask pellicle mount

Takashi Mizoguchi, Satoshi Akutagawa, Monica Barrett, Michael Caterer, Robert Nolan, Kenneth Racette, Dennis Plouffe, Nancy Zhou

Proceedings Volume 7379, 73791R (2009) https://doi.org/10.1117/12.824303

KEYWORDS: Pellicles, Photomasks, Distortion, Quartz, Adhesives, Chromium, Current controlled current source, Lithium, Phase shifts

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Proceedings Article | 17 October 2008 Paper

Evaluation of 32nm advanced immersion lithography pellicles

N. Zhou, K. Racette, M. Hibbs, T. Mizoguchi, D. Hasselbeck, M. Barrett, R. Nolan, F. Houle, J. Ritter, A. Wagner, M. Caterer

Proceedings Volume 7122, 71220B (2008) https://doi.org/10.1117/12.801663

KEYWORDS: Pellicles, Photomasks, Adhesives, Data modeling, Inspection, Distortion, Transmittance, Immersion lithography, Lenses, Fermium

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Proceedings Article | 11 May 2007 Paper

Improvement of CD variation control for attenuated phase-shift mask

Mikio Takagi, Takashi Mizoguchi, Yosuke Kojima, Tadashi Saga, Takashi Haraguchi, Yuichi Fukushima, Tsuyoshi Tanaka, Yoshimitsu Okuda, Yukio Inazuki, Hiroki Yoshikawa, Satoshi Okazaki

Proceedings Volume 6607, 66070B (2007) https://doi.org/10.1117/12.728924

KEYWORDS: Chromium, Critical dimension metrology, Photomasks, Etching, Printing, Semiconducting wafers, Manufacturing, Mass attenuation coefficient, Metals, Molybdenum

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Proceedings Article | 20 October 2006 Paper

High-transmission attenuated phase-shift mask for ArF immersion lithography

Yosuke Kojima, Takashi Mizoguchi, Takashi Haraguchi, Toshio Konishi, Yoshimitsu Okuda

Proceedings Volume 6349, 63491V (2006) https://doi.org/10.1117/12.686998

KEYWORDS: Optical proximity correction, Transmittance, Photomasks, Polarization, Scanners, Resolution enhancement technologies, Lithography, Immersion lithography, Phase shifting, Semiconducting wafers

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Proceedings Article | 19 May 2006 Paper

Study of mask induced polarization effects on att.PSM in immersion lithography

Takashi Mizoguchi, Yousuke Kojima, Mikio Takagi, Tadashi Saga, Takashi Haraguchi, Toshio Konishi, Yuuichi Fukushima, Tsuyoshi Tanaka, Yoshimitsu Okuda

Proceedings Volume 6283, 62831E (2006) https://doi.org/10.1117/12.681878

KEYWORDS: Nanoimprint lithography, Photomasks, Polarization, Refractive index, Immersion lithography, Mass attenuation coefficient, Lithographic illumination, Lithography, Quartz, Printing

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Showing 5 of 10 publications

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