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Dr. Tania Hemakumara
at Oxford Instruments Plasma Technology Ltd.
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 23 March 2020 Paper
Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance
Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward, Tania Hemakumara
Proceedings Volume 11329, 113290I (2020) https://doi.org/10.1117/12.2558732
KEYWORDS: Etching, Gallium nitride, Plasma, Semiconducting wafers, Argon, Reactive ion etching, Field effect transistors, Chlorine
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