Laser produced plasma (LPP) systems have been developed as the primary approach for use in EUV scanner light sources for optical imaging of circuit features at 20nm nodes and beyond. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from ASML. We present the latest results on power generation and collector
protection for sources in the field operating at 10W nominal power and in San Diego operating in MOPA (Master Oscillator Power Amplifier) Prepulse mode at higher powers. Semiconductor industry standards for reliability and source availability data are provided. In these proceedings we show results demonstrating validation of MOPA Prepulse operation at high dose-controlled power: 40 W average power with closed-loop active dose control meeting the requirement for dose stability, 55 W average power with closed-loop active dose control, and early collector
protection tests to 4 billion pulses without loss of reflectivity.
Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner
light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This
paper provides a review of development progress and productization status for LPP extreme-ultra-violet
(EUV) sources with performance goals targeted to meet specific requirements from leading scanner
manufacturers. We present the latest results on exposure power generation, collection, and clean transmission
of EUV through the intermediate focus. Semiconductor industry standards for reliability and source
availability data are provided. We report on measurements taken using a 5sr normal incidence collector on a
production system. The lifetime of the collector mirror is a critical parameter in the development of extreme
ultra-violet LPP lithography sources. Deposition of target material as well as sputtering or implantation of
incident particles can reduce the reflectivity of the mirror coating during exposure. Debris mitigation
techniques are used to inhibit damage from occuring, the protection results of these techniques will be shown
over multi-100's of hours.
This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source
architecture for advanced lithography applications in high volume manufacturing. EUV lithography is
expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we
discuss the most recent results from high qualification testing of sources in production. Subsystem
performance will be shown including collector protection, out-of-band (OOB) radiation measurements,
and intermediate-focus (IF) protection as well as experience in system use. This presentation reviews the
experimental results obtained on systems with a focus on the topics most critical for an HVM source.
Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to
support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of
development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals
targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume
Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The
EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is
described, and our current product roadmap is shown.
Double patterning lithography places significant demands not only on the optical performance of the light source
(higher power, improved parametric stability), but also on high uptime in order to meet the higher throughput
requirements of the litho cell. In this paper, we will describe the challenges faced in delivering improved
performance while achieving better reliability and resultant uptime as embodied in the XLR 600ix light source from
Cymer, announced one year ago. Data from extended life testing at 90W operation will be shown to illustrate these
improvements.
The ability to extend deep ultraviolet (DUV) lithography into the 32 and sub-32nm domain has more recently relied
on improvements in source-mask optimization (SMO), double patterning (DP) and complex, pixellated illumination
patterns. Yet these techniques require a commensurate improvement in the light source that powers the latest
generation scanners in order to enable high performance at high throughput. This paper will show detailed
performance results of the latest-generation light source from Cymer that incorporates flexible power with dramatic
improvements in dose, wavelength and bandwidth stability.
Deep ultraviolet (DUV) lithography improvements have been focused on two paths:
further increases in the effective numerical aperture (NA) beyond 1.3, and double
patterning (DP). High-index solutions for increasing the effective NA have not gained
significant momentum due to several technical factors, and have been eclipsed by an
aggressive push to make DP a high-volume manufacturing solution. The challenge is to
develop a cost-effective solution using a process that effectively doubles the lithography
steps required for critical layers, while achieving a higher degree of overlay performance.
As a result, the light source requirements for DP fall into 3 main categories: (a) higher
power to enable higher throughput on the scanner, (b) lower operating costs to offset the
increased number of process steps, and (c) high stability of optical parameters to support
more stringent process requirements. The XLR 600i (6kHz, 90W @15mJ) was
introduced last year to enable DP by leveraging the higher performance and lower
operating costs of the ring architecture XLR 500i (6kHz, 60W @10mJ) platform
currently used for 45nm immersion lithography in production around the world. In
February 2009, the XLR 600ix was introduced as a 60/90W switchable product to
provide flexibility in the transition to higher power requirements as scanner capabilities
are enhanced. The XLR 600ix includes improved optics materials to meet reliability
requirements while operating at higher internal fluences. In this paper we will illustrate
the performance characteristics during extended testing. Examples of performance
include polarization stability, divergence and pointing stability, which enable consistent
pupil fill under extreme illumination conditions, as well as overall thermal stability which
maintains constant beam performance under large changes in laser operating modes.
Furthermore, the unique beam uniformity characteristics that the ring architecture
generates result in lower peak energy densities that are comparable to those of a typical
60W excimer laser. In combination with the XLR's long pulse duration, this allows for
long life scanner optics while operating at 15mJ.
The XLA 300 is Cymer's fourth-generation MOPA-based Argon Fluoride light source built on the production-proven XLA platform. The system is designed to support very high numerical aperture dioptric and catadioptric lens immersion lithography scanners targeted for volume production of semiconductor devices at the 45nm node and beyond. The light source delivers up to 90 W of power with ultra-line narrowed bandwidth as low as 0.12 pm FWHM and 0.25 pm 95% energy integral. The high output power is achieved by advancements in pulse power technology, which allow a 50% increase in repetition rate to 6 kHz. The increased repetition rate, along with pulse stretching, minimizes damage to the scanner system optics at this high power level. New developments in the laser optical systems maintain industry-leading performance for bandwidth stability and high level of polarization despite the increased thermal load generated at the higher repetition rate. The system also features state-of-the-art on-board E95% bandwidth metrology and improved bandwidth stability to provide enhanced CD control. The E95% metrology will move bandwidth monitoring from a quality safeguard flag to a tool that can be used for system feedback and optimization. The proven high power optics technology extends the lifetime of key laser optics modules including the line-narrowing module, and the cost of consumables (CoC) is further reduced by longer chamber lifetimes.
The first generation MOPA-based ArF laser XLA-100 was introduced in January 2003 in response to the needs of the high NA ArF scanners for higher power and narrower spectral bandwidth. The second generation product XLA-105 was introduced in early 2004. This paper presents our third generation MOPA-based ArF laser product XLA-200 that is designed and engineered to meet the light source requirements of the ArF immersion lithography. It is expected to be used for 65-nm and 45-nm volume production of semiconductor devices. The XLA-200 is capable of producing a 60W of ultra-line-narrowed 193nm light with the FWHM bandwidth of less than 0.15pm and the E95% integral bandwidth of less than 0.35pm. It features state-of-the-art on-board bandwidth metrology tool that measures E95% bandwidth as well as FWHM. Real-time accurate bandwidth information can be utilized for lithography exposure tool feedback control. The improved dual-chamber laser gas control ensures excellent bandwidth stability, which enables tighter CD control. Together with a lower cost of ooperation, the XLA-200 sets a new performance level for the dual chamber 193nm light source for microlithography.
Volume production immersion lithography scanners will require new light sources offering increased output power while delivering improved dose stability over a shorter exposure window. Scaling the light source repetition rate from 4 to 6 kHz is the logical step toward meeting those combined requirements. We will present the results of the latest progress towards developing a 193 nm, 6 kHz light-source using Cymer’s proprietary MOPA technology. We will discuss how the design of critical core technology elements, such as the discharge chamber, the solid-state-pulsed-power modules and opto-electronic detectors within the system are modified to handle the higher average power, thermal demands, and speed to support reliable operation up to 6kHz. The XLA platform, which is already used on three generations of 193 nm MOPA light source, allows seamless integration of these improved technology elements into a reliable, proven product platform. We will also report results of the characterization of the optical parameters critical to the lithography process, such as spectral bandwidth and its stability, energy stability and dose stability, up to 6 kHz.
Since the introduction of the XLA-100 in January 2003, we have built, tested, and shipped a large number of XLA-100 MOPA lasers to microlithography scanner manufacturers. Some systems have already been installed at chip fabrication lines. To ensure product design robustness, we have been performing a long-term system performance test of an XLA-100 laser at Cymer. In this paper, we will report optical performance of the XLA-100 we see during manufacturing final tests, and a summary of the long term testing.
Since the announcement in March 2002 of plans to develop an advanced light source to meet the future spectral power and cost requirements of photolithography, we have made significant progress in the development and productization of the core technology for an ultra line-narrowed, excimer light source based on a master oscillator-power amplifier (MOPA) approach. In this paper, we will focus on the architecture and performance of the first generation of production-ready, MOPA-based ArF light sources developed at Cymer, Inc. This first generation of MOPA-based ArF light sources is referred to as the XLA 100 product series.
The present day notion of the extensibility of KrF laser technology to ArF is revisited. We show that a robust solution to ArF requirements can be met by significantly altering the laser's core technology-discharge chamber, pulsed power and optics. With these changes, a practical ArF tool can be developed. Some of the laser specifications are: Bandwidth: 0.6 pm (FWHM) 1.75 pm (95% Included Energy); Average Power: 5 W; Repetition Rate: 1000 Hz; Energy Stability (3(sigma) ): 20% (burst mode) 8% (continuous); Pulse Width: 25 ns.
With the near certainty that the excimer stepper will become one of the lithography tools for printing sub -0.4 micrometers design rule features, it has now become imperative to better understand the performance characteristics of the excimer laser in the context of the total lithography process. It is no longer possible to treat the laser in isolation from the stepper or the resist. The cost of operation for the laser is integrally tied with the stepper specifications, design rule requirements, and resist characteristics. This paper discusses the dependence of laser parameters on stepper performance, and the relationship between various laser operating parameters and specification. In addition, it analyzes the combination of the laser to the lithography process cost per wafer level in terms of design rule requirements and resist characteristics. 15
In this paper, we present performance, reliability, and maintainability data for the ELS-4000, a production-worthy, spectrally narrowed KrF excimer laser for wafer steppers. This laser uses the same modular design concept as its predecessor, the CX-2LS. The ELS-4000 exhibits the following specifications: (i) spectral bandwidth (FWHM) less than 2.0 pm; (ii) wavelength stability less than or equal to 0.25 pm; (iii) output power of 4 W at 400 Hz; (iv) pulse-to-pulse energy stability less than or equal to 2.5%; (v) fast and accurate wavelength slewing and locking capability; (vi) small footprint measuring 0.74 m by 1.36 m; (vii) mean productive time between failures exceeding 700 hours; and (viii) design and engineering features, which meet all the safety standards of
the semiconductor industry.
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