A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to the HT-PSM to exhibit higher transmittance in ArF wavelengths and the thickness of the new material is thinner than that of the conventional 6% phase-shifter (MoSiON). A new blank structure using a MoSi shading layer with double Cr hardmasks (HM) is developed and suggested for the HTPSM process. Double HM blank stacks enable the HT-PSM to adopt thin PR process for resolution enhancement in mask process. The first Cr on the MoSi is utilized as a HM to etch MoSi shading layer, an adhesion layer for PR process, and also a capping layer to protect blind area during MoSi and phase-shifter etching. In contrast, the role of the second Cr between MoSi and phase-shifter is an etch stopper for MoSi and a HM to etch phase-shifter at the same time. However, Double HM process has some problems, such as first Cr removal during second Cr etching and complex process steps. To solve the Cr removal issues, we evaluated various Cr layers which have different etchrates and compositions. According to the evaluations, we optimized thicknesses and compositions of the two Cr layers and corresponding etching conditions. Lithography simulations demonstrate that the new HT-PSM has advantages in NILS in aerial images. As a result, initial wafer exposure experiments using the HT-PSM show 13-32% improvements in LCDU compared to that of the conventional 6% PSM due to its higher NILS.
Dry etching has become critical to manufacture the resolution enhancement technique (RET) mask in the ArF
lithography. Among RET masks, alternating phase shift mask (PSM) and chrome-less phase lithography (CPL) mask
require the formation of 180 degrees phase differences by quartz dry etching. There are many error factors, which can
influence CD uniformities on mask and wafers, in Quartz dry etch step such as sidewall angle, phase MTT and
uniformity, micro-trench, and morphology. Furthermore, quartz depth is hard to control because there is no stopping
layer for quartz etching. Additionally, Pattern profile of Chrome layer is very important, because chrome profile affect
sidewall angle for quartz. We have simulated and investigated to identify the influences of many error factors on RET.
Consequently, we investigated characteristics of quartz dry etching process performance and the influences on
resolution, which can be improved by dry etch parameters.
KEYWORDS: Video, Video processing, Quality measurement, Image quality, Edge detection, Detection and tracking algorithms, Image processing, Optical engineering, Data modeling, Signal to noise ratio
We propose a new method for an objective measurement of video quality. By analyzing subjective scores of various video sequences, we find that the human visual system is particularly sensitive to degradation around edges. In other words, when edge areas of a video sequence are degraded, evaluators tend to give low quality scores to the video, even though the overall mean squared error is not large. Based on this observation, we propose an objective video quality measurement method based on degradation around edges. In the proposed method, we first apply an edge detection algorithm to videos and locate edge areas. Then, we measure degradation of those edge areas by computing mean squared errors and use it as a video quality metric after some postprocessing. Experiments show that the proposed method significantly outperforms the conventional peak signal-to-noise ratio (PSNR). This method was also independently evaluated by independent laboratory groups in the Video Quality Experts Group (VQEG) Phase 2 test. The method consistently provided good performances. As a result, the method was included in international recommendations for objective video quality measurement.
As promising technologies for ArF optical lithography, CLM(Chrome-Less Mask) and alternating phase shift mask(PSM) technologies among RETs(Resolution Enhancement Techniques) for low k1 have been researched worldwide for a couple of decades. Quartz dry etching has become more critical to manufacture the mask with those technologies in the ArF lithography. Alternating PSM and CLM require the formation of 180-degree phase difference by quartz dry etch. There are many error factors, which can influence CD uniformities on mask and wafers, in dry etch step such as micro-trench, depth uniformity, sidewall angle, and morphology. Furthermore, quartz depth is hard to control because there is no stopping layer for quartz etch. Micro-trench, one of the important factors on quartz
etch, can drop light intensity on wafer. Therefore, micro-trench can deteriorate the RET. We investigated characteristics of micro-trench during quartz dry etch process and the influences on resolution, which can be improved by dry etch parameters.
KEYWORDS: Image processing, Optical engineering, Video, Video compression, Video processing, Digital cameras, Optical filters, Signal processing, Image quality, Motion estimation
We propose rapid hybrid interpolation methods that employ more than one interpolation algorithm, and choose the most appropriate interpolation algorithm that provides high-quality images with a minimum number of operations. Although a complex interpolation algorithm generally outperforms a simple interpolation algorithm, the differences are negligible for most pixels, with major differences occurring around edges. Thus, in the proposed algorithm, we first apply a test to predict which interpolation is most appropriate for a given pixel in terms of complexity and performance. Then, a simple interpolation algorithm is used for pixels for which the simple interpolation algorithm provides acceptable performances, and a complex interpolation algorithm is used for pixels for which the complex interpolation algorithm significantly outperforms the simple interpolation algorithm. Consequently, it is possible to obtain high-quality images without significantly increasing the number of operations.
In this paper, we propose a new method for an objective measurement of video quality based on edge degradation. One of the most important requirements for an objective method for video quality measurement is that it should provide consistent performances over a wide range of video sequences that are not used in the designing stage. By analyzing subjective scores of various video sequences, we found that the human visual system is sensitive to degradation around edges. In other words, when edge areas of a video are blurred, evaluators tend to give low scores to the video even though the overall mean squared error is not so large. Based on this observation, we propose an objective video quality measurement method that measures degradation around edges. In the proposed method, we first apply an edge detection algorithm to videos and find edge areas. Then, we measure degradation of those edge areas by computing mean squared error. From this mean squared error, we compute the PSNR and use it as video quality metric. Experimental results show that the proposed method compares favorably with the current objective methods for video quality measurement. Furthermore, when the proposed method is applied to test video sequences that are not used in the designing stage, it still consistently provides satisfactory performances.
In this paper, we investigate the performance of an objective video quality assessment method using the wavelet transform for a large data set. The objective video quality assessment utilizes the wavelet transform, which is applied to each frame of source and processed videos in order to compute spatial frequency components. Then, the difference (squared error) of the wavelet coefficients in each subband is computed and summed. By repeating this procedure to the entire frames of a video, a sequence of difference vectors and the average vector are obtained. Each component of the average vector represents a difference in a certain spatial frequency. In order to take into account the temporal frequencies, a modified 3-D wavelet transform can be applied. Although this evaluation method provides a good performance for training data, its performance for new test videos remains to be seen due to a large number of parameters. In this paper, we apply the method to a large video data set and analyze the performance.
As the design rule of lithography becomes smaller, printability of reticle defect to wafer is critical for the photomask manufacturing technology. In order to improve the controllability of reticle defects, inspection and repair systems are expanding their capability by continuously modifying hardware and software. This is a good solution to detect and review the defect but it is indirect approaching to reduce the defect in the photomask process. To produce the photomask of defect free or low defect density, effort is needed to improve the capability of defect control in the mask-making process and to evaluate the source of hard defect as well as soft defect. In this paper, we concern the defect source and the feature of printed defects in photomask manufacturing steps. We also discuss the efforts to eliminate the defect source and to control the mask-making process with low defect density. In order to eliminate the source of defects, we partition the mask-making process with defect inspection system, SLF27 TeraStar and Lasertec MD2000, and review a defect shape with CD SEM and AFM. And we compare printed defects, which exist in each process steps, after dry etching process.
As the design rule of lithography becomes smaller, printability of reticle defect to wafer is crucial for the photomask manufacturing technology. In order to improve the controllability of reticle defects, inspection and repair systems are expanding their capability by continuously modifying hardware and software. This is a good solution to detect and review the defect but it is indirect approaching to reduce the defect in the photomask process. To produce the photomask of defect free or low defect density, effort is needed to improve the capability of defect control in the mask-making process and to evaluate the source of hard defect as well as soft defect.
In this paper, we concern the defect source and the feature of printed defects in photomask manufacturing steps. We also discuss the efforts to eliminate the defect source and to control the mask-making process with low defect density. In order to eliminate the source of defects, we partition the mask-making process with defect inspection system, SLF27 TeraStar and Lasertec MD2000, and review a defect shape with CD SEM and AFM. And we compare printed defects, which exist in each process steps, after dry etching process.
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