KEYWORDS: Semiconductor lasers, Quantum wells, Lab on a chip, Waveguides, Laser damage threshold, Nd:YAG lasers, Broad area laser diodes, Temperature metrology, Cladding, High power diode lasers
Temperature characteristics of several familiar high power diode lasers with broad area, whose wavelength was
separately 808 nm, 810 nm, 940 nm and 980 nm, were analyzed. In order to see the effect the change of the quantum
well structure on the characteristic temperatures, different structures were attempted. For the 808 nm structure, we tried
different barrier thicknesses. For the 810 nm structure, different cavity lengths were attempted. And we studied the 940
nm and 980 nm also. In this paper, the widths of these devices were all 100 μm. Characteristic temperatures of these
devices were calculated. The appropriate structure was available for different application.
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function
of semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of
the laser chip at different pump power and different temperature. We can see that: with increasing pump power, the
thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole
pair created in the absorbtion layer have no enough time to rate to one of the wells, and the non-radiative recombination
happens in the barrier. When the thermal effects becomes stronger, the chip will not lasing. This phenomenon is from the
smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental
technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine
the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the
absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs, This three QWs
structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the
heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
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