Due to the epsilon near zero (ENZ) effect, indium tin oxide (ITO) can be used in optical modulators and reduce the modulator’s size dramatically. The tunability of optical properties and the CMOS compatible capability make ITO more attractive. To study the properties of ITO thin films, several works have been done. Firstly, thin ITO thin films were obtained by magnetron sputtering with different oxygen flow rates ranging from 0 to 50sccm. Secondly, EDS was carried out to investigate the elements' content. It can be found that increasing oxygen flow rate increases the percentage of oxygen atom and Sn atom of ITO thin films. Thirdly, surface profiler was used to measure the stress value of the ITO thin films. We find that the tensile stress of ITO thin films tends to transform into compressive stress when the oxygen flow rate rises, which is worth considering in the design of devices. Fourthly, spectrometer and Hall effect measurement were applied to measure the normal incidence transmittance and electrical properties of the ITO thin films. Larger oxygen flow rate leads to the normal incidence transmittance of ITO thin films becoming larger. Hall effect measurement contributes to the conclusion that the carrier concentration of ITO thin films is able to range from 1019 to 1021 cm-3, and that when the oxygen flow rate is not too large, as the environment oxygen increases, the carrier concentration decreases and the mobility increases. This research can contribute to the design of compact ITO based optical modulators so as to achieve a better performance, which can further the integration of optical modulators.
A compact polarization demultiplexer (P-DeMux) is proposed and characterized to enable wavelength-divisionmultiplexing and mode-division-multiplexing simultaneously. The proposed structure is composed of a microring resonator in ultrathin waveguide and two bus channels in the novel silicon nitride silica silicon horizontal slot waveguides. In the slot waveguide, the transverse electric (TE) mode propagates through the silicon layer, while the transverse magnetic (TM) mode is confined in the slot region. In the designed ultra-thin waveguide, the TM mode is cutoff. The effective index of the TE modes for ultrathin and slot waveguides have comparable values. Thanks for these distinguishing features, the input TE mode can be efficiently filtered through the ultra-thin microring at the resonant wavelength, while the TM mode can directly output from the through port. Simulation Results show that the extinction ratio of the proposed P-DEMUX for TE and TM modes are ∼36.5 and 31.27 dB, and the insertion losses are ∼0.22 and 0.249 dB respectively.
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