We present a GaSb based micro transfer printed (µTP) gain devices for integration with a 3 µm silicon-on-insulator platform and demonstrate integration to a reflective distributed Bragg reflector (DBR) forming a functional single frequency external cavity laser at 1960 nm. Previously used on InP and GaAs, we transferred the technique on GaSb, that allows the expansion of applications from telecommunication to sensing, such as environmental gas detection. In addition, we introduce a test device series and a methodology to measure and analyze the effects µTP design specific features, such as etched facets, to assess the transfer print process quality.
We present for the first time transfer printable GaSb laser diode and semiconductor optical amplifier coupons. Device coupons show excellent device characteristics with little or no penalty associated to specific integration features required by transfer print process. Transferring of devices on silicon substrate containing a waveguide structure is shown and preliminary results from transferred devices show CW lasing around 2 µm wavelength and light coupling to a waveguide on integrated photonic circuit. The fabrication methodology enables a wide variety of GaSb devices towards highly integrated photonics applications in environmental sensing, bio marker identification and industrial monitoring.
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