We report on successful fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting around 2.3μm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5-mm-long laser diode, single mode continuous-wave operation with output power of 10mW is obtained. The devices show a stable single mode operation with high side mode suppression ratio.
An experimental investigation for the polarization analysis of the high power GaSb-based semiconductor laser diodes emitting at 2.1μm in terms of measuring Stokes parameters has been exploited and adopted, which gives further insight into understanding, manipulating and applying the polarization properties of the laser diode. Results of output performance and polarization behavior of the laser are presented in the paper. The average linear polarization of the laser diode reaches 97.72% with output power exceeding 1W at 3.5A under CW operation at 20℃, which demonstrates the dominant position of linear polarization light of the output beam. Highly linear-polarized properties could not only enhance the performance of high power GaSb-based laser diodes in traditional applications in laser processing and beam combing, but also open new application fields such as parametric convention and coherent detection.
High-power InGaSb/AlGaAsSb quantum well separate confinement structure lasers are fabricated. Threshold currents of the sample lasers range from 150mA to 270mA, turn-on voltages range from 0.51V to 0.59V. Stable high power and high efficiency operation is achieved, output powers at 3A range from 978mW to 1050mW, the power conversion efficiencies at 3A range from 21.3% to 22.9%, slop efficiencies range from 0.35W/A to 0.38W/A. The capability of fabricating reliable high-power 2μm GaSb-based laser is confirmed. The current of one sample was ramped up to 6A, the emitter exhibits a high performance with peak output power of 1320mW at 5.4A,maximum power conversion efficiency of 27.5% and slop efficiency of 0.34W/A.
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