Dr. Ying Fei Profile

Dr. Ying Fei

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Proceedings Article | 13 October 2009 Paper

Minority carrier mobility measurement in HgCdTe with light-modulated Hall effect

Fei Yin, Bo Zhang

Proceedings Volume 7518, 75180O (2009) https://doi.org/10.1117/12.843162

KEYWORDS: Magnetism, Modulation, Mercury cadmium telluride, Infrared radiation, Photodetectors, Temperature metrology, Infrared detectors, Optical testing, Infrared photography, Diffusion

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The light modulated Hall measurement system was set up in order to measure the minority carrier mobility of the p-type HgCdTe material. Minority carrier mobility is one of the main parameters for HgCdTe infrared photodetectors, because it determines the diffusion length of minority carriers, which plays a big role in the performance of optoelectronic devices. Therefore, it is important to get the minority carrier mobility in HgCdTe, so as to evaluate the material property before fabrication of photodetectors. By adding a modulated laser to the Hall system, the modulated Hall voltage was measured on p-type Hg_1-xCd_xTe(x=0.233) sample over a range of 0-1.8T in the magnetic field at temperature of 75K. The modulated signal is generated by the movement of excess photocarriers in the magnetic field, so it has a relationship with the magnetic field, the photogenerated carrier concentration and the electron and hole mobilities. Since the majority concentration and mobility can be derived from the Hall effect, the minority mobility and the photogenerated carrier concentration were obtained from fitting the light-modulated Hall voltage ▵V_H as a function of the magnetic field B. As compared to the references, the minority mobility we have obtained is reasonable, so the light-modulated Hall effect is an effective way to obtain the minority carrier mobility.

Proceedings Article | 9 February 2009 Paper

Vacuum baking effects on the I-V characteristics of LWIR HgCdTe photodiodes with different passivation

Yi Deng, Fei Ying, Xin-guo Cheng, Zheng-hua Ye, Xiao-ning Hu

Proceedings Volume 7158, 715808 (2009) https://doi.org/10.1117/12.807058

KEYWORDS: Mercury cadmium telluride, Photodiodes, Zinc, Resistance, Long wavelength infrared, Liquid phase epitaxy, Sensors, Infrared detectors, Temperature metrology, Gallium arsenide

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HgCdTe infrared detector is designed to operate at cryogenic temperatures, so vacuum baking is a required process for out-gassing in packaging of devices. As HgCdTe material, as well as ZnS passivation layer is sensitive to heat induced changes, this process may be problematical for HgCdTe devices even at relatively low temperatures. We try to solve the problems of heat instability by the fabrication of CdTe/ZnS double passivation layers. The effect of vacuum baking is investigated through current-voltage (I-V) characteristics. We have compared the effects on devices with different passivation layers. We have also compared the photodiodes fabricated on MBE grown HgCdTe on GaAs substrates and LPE grown HgCdTe on CdZnTe. The devices were passivated with electron beam evaporated CdTe and ZnS and the p-n junction was formed by ion-implantation. Through the analysis of I-V characteristics, we found that the devices passivated with ZnS cannot afford vacuum baking even at 70°C, while the CdTe/ZnS- passivated devices can afford up to 110°C temperature and the performance improved. After only 4 hours baking, the dynamic resistance of ZnS passivation devices began to decrease and 10 hours later the zero-bias dynamic resistance (R0) decreased nearly 3 times. Further baking of 110°C sees the maximum dynamic resistance of CdTe/ZnS passivation devices increase 2 to 4 times. An insight into the mechanisms and parameters that are affected by vacuum baking is also gained by resistance-voltage (R-V) curve fitting. The results also indicated the baking effects on LPE grown HgCdTe devices are almost same to MBE grown HgCdTe devices.

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